etchant 中文意思是什麼

etchant 解釋
n. 名詞 蝕刻劑。

  1. More often, all of the materials exposed to the etchant have a finite etch rate.

    通常,所有暴露在刻蝕劑中的材料都具有一定的刻蝕速率。
  2. This etchant can show different defects, such as dislocations, grain boundaries, twins, te - rich inclusions and precipitates etc., on different planes

    這種腐蝕劑能顯示不同晶面上的多種缺陷,如位錯、晶界、富te相等。
  3. The addition of surfactant to etchant can protect surface from intense dissolution, and keep a relative similarity of dissolving activity between surface and tunnel walls. in order to gain a satisfactory enlargement of tunnels, the etchant temperature should be controlled at 70 - 90

    3a / cm ,嚴重,使比容降低;溶液中添加表面活性劑可以有效地抑製表面溶解,提高比容;適宜的擴孔條件為:溫度80oc ; h +濃度lmol / l0
  4. The relationship between capacitance and corrosion conditions in the enlargement of tunnels justifies the latter competition mechanism the varied etching conditions were implemented by enhancing the passivating characteristics and viscosity, changing the a13 + concentration, temperature of etchants and current pulsation. passivating acid in the etchant is conducive to the instant passivation of exposed areas on the foil surface, and hence sustains the balance of competition between aggressive anions and passivators, providing pit nucleatiori sites continuously

    通過侵蝕液中添加草酸、硫酸、乙二醇,改變侵蝕液al ~ ( 3 + )濃度和電流紋波等方法,研究了不同的侵蝕條件對隧道孔形貌和比容的影響,結果表明:草酸和硫酸既保護了鋁箔表面又促進了隧道孔孔壁的迅速鈍化,增加發孔密度。
  5. In this paper, the flow pattern defects ( fpds ) were revealed by secco etchant and their shape, distribution on wafer and tip structure were studied in details by optical microscope and atomic force microscope ( afm ). the relationship between etching time and the tip structure of fpds was also discussed. furthermore, by studying the effect of rapid thermal annealing ( rta ) on the density of fpds in ar, the annihilation mechanism of fpds was discussed in this paper

    本文將cz硅單晶片在secco腐蝕液中擇優腐蝕后,用光學顯微鏡和原子力顯微鏡對流動圖形缺陷( flowpatterndefects , fpds )在矽片中的形態、分佈及其端部的微觀結構進行了仔細地觀察和研究,並討論了腐蝕時間對fpds缺陷端部結構的影響;本文還通過研究ar氣氛下快速退火( rapidthermalannealing , rta )對fpds缺陷密度的影響,初步探討了fpds的消除機理。
  6. Based the eag - i etchant, a new etchant was developed, with which the etch pit pattern on ( 110 ), ( 111 ) and ( 100 ) faces of czt crystals can emerge immediately and effectually. this pager investigated relation between the ( 110 ) faces of cutting from crystals conveniently and accurately by laser reflex method. by the surface treatment, the nuclear radiation detector was fabricated with ( 110 ) of czt crystal and strong 241am responsibility was observed

    在改變e _ ( ag )腐蝕液的配方的基礎上,研製了新的腐蝕液,可方便、快速、有效的顯示czt不同晶面的缺陷蝕坑形貌;研究了利用激光正反射法和自然解理的不同( 110 )面之間的關系,方便、快速、準確的進行定向切割晶體的方法;採用生長的czt單晶體自然解理的( 110 )面,經過表面處理,試制了探測器元件,對24lam有較強的響應。
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