etching process 中文意思是什麼

etching process 解釋
刻蝕過程
  • etching : n. 1. 蝕刻法；蝕刻（銅）版畫；蝕鏤術。2. 蝕刻畫，蝕刻版，蝕刻版印刷品。
  • process : n 1 進行，經過；過程，歷程；作用。 2 處置，方法，步驟；加工處理，工藝程序，工序；製作法。3 【攝影...
  1. Abstract : the preparation of cuprous chloride from etching waste liquor of cupric chloride and crude copper powder was studied. the result showed that this method had many advantages, including simple process, easy operation and good quality of product, therefore it had remarkable economic and environmental benefits

    文摘:以氯化銅蝕刻液廢液、粗銅粉等為原料，在常溫下反應制備氯化亞銅，工藝簡單，操作簡便，產品質量好，具有顯著的經濟效益和環境效益。
  2. Influence of process parameters on the etching rate in inductively coupled plasma etcher

    等離子體刻蝕中工藝參數對刻蝕速率影響的研究
  3. The resolution of an etching process is a measure of the fidelity of pattern transfer.

    刻蝕工藝的解析度是圖形轉移保真度的量度。
  4. With the development of printed circuit board ( pcb ), liquid photo imageable etching resist ink has become the prime process technology of the fine line graph facture

    摘要隨著印製電路板（ pcb ）行業的飛速發展，液態光致抗蝕油墨已逐漸成為精細導線圖形製作的主要方法。
  5. Developing the lithography process models to properly characterize critical dimension ( cd ) variations caused by proximity effects and distortions introduced by patterning tool, reticule, resist exposure, development and etching, they are beneficial to develop a yield - driven layout design tool, the engineers could use it to automate the tasks of advanced mask design, verification and inspection in deep sub - micron semiconductor manufacturing

    建立準確描述由於掩模製造工藝、光刻膠曝光、顯影、蝕刻所引起的光學鄰近效應和畸變所導致的關鍵尺寸變化的光刻工藝模型，有助於開發由成品率驅動的版圖設計工具，自動地實現深亞微米下半導體製造中先進的掩模設計、驗證和檢查等任務。
  6. The dependence of oxygen precipitation and induced - defects in heavily as - doped silicon on heat treatment process was studied by annealing and ig process, chemical etching, scanning electron micrograph ( sem ) and transmission electron microscopy ( tem ). a developed ig technique was suggested and the mechanism of the influence of as on oxygen precipitation formation in heavily as - doped silicon was discussed

    本文通過化學腐蝕、光學顯微鏡、掃描電鏡（ sem ） 、透射電境（ tem ）等分析技術，對重摻砷硅單晶在單步退火工藝和內吸雜退火工藝中氧沉澱及誘生缺陷的形態，形核與熱處理溫度、時間的關系等進行了研究。
  7. Studies on subsurface damage detection and wet - etching process of k9 optics

    9基片的亞表面損傷探測及化學腐蝕處理技術研究
  8. Observation on the variation of surface morphology during the etching process indicates that the grain boundary and te precipitates will be shown earlier than the dislocations

    本文研究了晶片的腐蝕過程，觀察隨腐蝕程度的逐漸加深，晶片表面缺陷蝕坑形貌的變化。
  9. Process parameters related to the film quality are discussed ; relations are found between the etching rate and different process parameters when sio2 and cr thin films are etched in an inductively coupled plaslma ( icp ) etching equipment ; the tmah eroding solution ’ s ph value under different temperatures and concentrations are studied, since the etching process can be controlled by the ph value

    3 .初步研究了利用pecvd淀積si3n4薄膜的工藝，討論了影響薄膜質量的相關工藝參數;初步研究了用icp刻蝕sio2和cr的相關工藝;通過分析不同濃度tmah腐蝕液在不同溫度下其ph值的變化，研究了以溶液ph值作為腐蝕溶液的控制參數。
  10. In addition, the effect of collisions and a low source power can slow down the etching process

    碰撞效應和低電源功率減緩刻蝕的進程。
  11. Surface ramam spectrpscopy for in situ investigating silicon etching process

    前驅體法制備氮氧化硅納米線及其光學性能研究
  12. The lithographic and etching process for a membrane creates a mesh of metal wires with silicon dioxide filling the space between them

    薄膜先以微影及蝕刻製程製作出金屬線路，線路之間則填入二氧化矽。
  13. We give some useful analyses and the computer simulations for the ion etching process. compared with the atomic force microscope ( afm ) scanning photograph of the etching surface, the theoretical results prove that these simulation analyses assure the precision required by this problem, so these mathematical models are reasonable and correct. the analysis method in this paper is useful to analyze etching process, and it can also afford some valuable reference to etching technology

    在本論文我們主要利用這個數學模型，對使用離子束刻蝕製作單臺階光柵的臺階與溝槽部分的表面面形隨時間的演變過程分別進行了計算機模擬分析，並通過把理論結果與在實驗中得到的刻蝕表面在原子力顯微鏡（ afm ）下拍攝的照片進行比較，結果說明這種模擬分析能夠保證對該問題分析所要求的精度，從而也證明了理論模型的合理性和正確性。
  14. Plasma etching has been widely used in the etching process of si devices. now the study is focused on the microfabrication of compound semiconductor

    等離子體干法刻蝕在硅器件的微細加工中已經得到廣泛應用，目前研究的焦點集中在化合物半導體。
  15. For example, it is challenging for the chemical etching process to drop below a 1. 5 aspect ratio while, with laser cutting and electroforming, apertures can be produced that have a 1 : 1 aspect ratio to the stencil thickness

    比如，表觀比率低於1 . 5對于化學腐蝕試一大挑戰，而激光切割和電鑄可製成表觀比率為1 . 1的鋼網。
  16. Because the etched pattern will be effected by many factors, many technical difficulties such as getting the ideal etched pattern and monitoring the etching process have not been solved yet

    因影響半導體激光誘導液相腐蝕效果的因素很多，要得到理想的腐蝕圖樣以及監控腐蝕進程有著很大的技術難度，至今沒有得到有效解決。
  17. It is very importance to analyze the evolution of microscopic surface features, which impact on the etching surface shape in solid etching process. much theoretical and experimental study point out that the different etching surface shapes by the plasma beam with same energy will be different

    隨著衍射光學元件的應用和半導體工業的發展，對刻蝕工藝中存在的導致刻蝕表面面形發生各種形變的諸多影響因素的數學分析是一個比較復雜和重要的問題。
  18. We discuss a low cost fabrication method of a diffractive microlens with high performance for both blue and red dvd objective lenses, which consists of single - step photolithography and a wet etching process

    摘要採用單步光刻和濕法腐蝕工藝，低成本快速製作面向高性能藍光和紅光dvd光學頭物鏡的衍射微透鏡。
  19. Aluminium target with deep amplitude modulation fabricated by chemical wet etching process

    調制靶的化學腐蝕制備工藝研究
  20. John has been trying to develop a new etching process for months and he ' s finally struck oil

    約翰已花了幾個月的時間來創造一種新的蝕刻工序，他最終獲得了成功。
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