gaas detector 中文意思是什麼

gaas detector 解釋
砷化鎵探測器
  • gaas : 砷化鎵
  • detector : n. 1. 發覺者。2. 偵查器。3. 【化學】檢定器。4. 【電學】檢電器。5. 【電訊】檢波器,指示器。
  1. At present, this kind of gaas photoconductor detector has had practical value. it can detect x - ray, gamma - ray, laser pulse successfully

    目前,我們研製的gaas探測器已具有一定的實用價值,可用在室溫下對x射線、射線、激光脈沖進行探測。
  2. After measuring dark current, photocurrent and response to x pulse of gaas detector before and after 1. 7 mev electronic radiation, the response tune, fall time of trailing edge, full width of half maximum ( fwhm ), sensitivity, carrier life, mobility are researched and contrasted. the result shows that the response speed of detector, time resolution ratio and nonlinear of back edge of output signal have been improved greatly after electronic radiation. though sensitivity of the detector reduces, its measuring range can be widened

    為了使探測器的性能得到進一步的提高,我們對其進行了電子輻照改性,並測量了本徵砷化鎵探測器和經過1 . 7mev電子輻照的探測器的暗電流、光電流及對x射線的脈沖響應,並對其響應時間,后沿下降時間,半高寬( fwhm ) ,載流子壽命,靈敏度進行對比,研究,結果顯示經電子輻照后的探測器的性能得到了改善,使響應速度,分辯率進一步提高,並消除了探測器輸出信號后沿的非線性,雖靈敏度有所降低,反而使其測量范圍得以拓寬。
  3. 1 adopt mitsubishi, ortel etc high sensitivity detector ; 2 end adopt first class low noise gaas module

    1採用ortel三菱等公司生產的高靈敏度光檢拾器
  4. By changing the composition of n and in, we can adjust the band gap of galnnas to about 1. 3 m and also make it lattice matched to gaas. it makes the resonant cavity enhanced ( rce ) infrared photo detector based on gaas become possible

    通過調節n和in的組分,可以使gainnas的帶隙在1 . 3 m左右,同時使得它與gaas晶格匹配,這為實現gaas基的共振腔增強型( rce )紅外探測器和激光器提供可能。
  5. Gaas photo - conductor detector is a new type of sub - nanosecond and pulse radiation detector that has been developed in recent years

    Gaas光電導探測器是近年來發展起來的一種新型亞納秒,脈沖輻射探測器。
  6. Undoped gaas semiconductor as photoconductor detector materiel is used and gaas photoconductor detector with double microstrip structure is developed. a set of techniques of making gaas detector is found during experiments. in order to improve property of the detector, the detector is irradiated by electron

    我們採用不摻雜的高純度的砷化鎵作為我們光電導探測器的材料,研製出了具有微帶結構的gaas光電導探測器,並經過深入仔細的研究,摸索出了一套製作gaas光電導探測器的有效工藝方法。
  7. Our research work lays a good foundation on development of gaas semiconductor and has great significance to the development of semiconductor detector in our country

    我們的研究工作為開發砷化鎵單晶體的應用奠定了良好的基礎,對國內半導體探測器技術的發展具有重大意義。
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