grown crystal 中文意思是什麼
grown crystal
解釋
長大晶體-
There are only a few reports on mnxcd1 - xin2te4 crystal. in the present dissertation, the researches on the growth technologies and the physical properties of mnxcd1 - xin2te4 crystals have been reported. mnxcd1 - xin2te4 ingots were grown by bridgman method
本文首次採用bridgman法生長了mn _ xcd _ （ 1 - x ） in _ 2te _ 4晶體，並研究了晶體中相的形貌、結構、成分和晶體中各組元沿軸向和徑向的成分分佈。 -
The size of grown nd : nbw crystal is 8 20mm
在國內首次生長出尺寸為8 20mm的nd ： nbw晶體。 -
For many years ' development, this factory has grown into a large one and its products and service cover : organic glass, hardware, ratten ware, wooden ware, manufacturing and processing, various gift shelves ( including for material, crystal and cosmetic, etc ), showcase, distribution card, real - estate sign, medal, department nameplate, indentification card, sand blasting, hot melting, carving, screen printing and 4 - color printing, which have been available in southeast asia, europe and ameriaca and gained great popularity among the customers
本廠規模龐大，是一家專業生產有機玻璃製作加工，各類禮品陳列架（資料架、水晶架、化妝品架等） ，展示櫃，各種牌類（經銷牌，物業指示牌，獎牌，科室牌，胸牌） ，噴砂，熱彎，雕刻，粘接，絲網印刷，四色網點絲印等的廠家，產品遠銷東南亞，歐美等國，深受廣大客商的喜愛。 -
The epitaxial growths of ingaas / gaas / algaas fundamental material and the fabrication of 45 - deflector are extensively studied in our work. some measuring methods are used to evaluate the growth quality of our grown structure by pl, cv, x - ray double crystal diffraction, sem etc. property analysis are provided for it
利用高能電子衍射、電化學c - v 、掃描電鏡（ sem ） 、 x射線雙晶衍射儀、光熒光譜儀（ pl ） 、原子力顯微鏡等多種方法對制備的器件進行了檢測，同時對實驗結果進行了必要的分析。 -
On the basis of the improvement on the crystal growth furnace, the new nlo crystal k2al2b2o7 ( kabo ) has been grown by the top - seeding flux method
在對爐體改進的基礎上，用頂部籽晶法生長新型紫外非線性光學晶體k _ 2al _ 2b _ 2o _ 7 （ kabo ） 。 -
Solution - grown crystal
溶液生長晶體 -
It was found that, the as grown crystal of mnxcd1 - xin2te4 is p type semiconductor, both the charge density and the resistivity increase with x value, while the carrier mobility decreases with x
晶體的電學性能，發現生長態的mncd晶體均為p型半導體。隨著組分x值的增大，載流於的濃度np減小，遷移率p 。 -
The light yield of the as - grown crystal is 1 865phe / mev, the decay time of fast component is 23ns and that of slow component is 99ns, the proportion of fast component and slow component is 88 % and 12 % respectively
光輸出性能測試結果表明ce : yap晶體的光產額為1865phe mev ，衰減時間的快慢成分分別為23ns和99ns ，快慢成分比例分別為88和12 。 -
The liquid encapsulated czochralski technique for growing gaas is receiveing considerable attention because it is capable of producing, at reasonable cost, large diameter semi - insulating gaas has a use in the production of gaas integrated circuits, and for this application it must have uniform properties over the whole area of a wafer cut from a grown crystal
目前，液封直拉技術生長gaas單晶獲得了廣泛關注，因為它能夠以合理的成本生產大直徑的半絕緣單晶。半絕緣材料是生產集成電路等微電子器件的良好材料，而這種應用就要求整個晶片具有很高的均勻性。 -
The microstructure morphology, the concentration, the infrared transmittance, and the x - ray rocking curves measured showed that a long single crystal part and axial steadily distributed zone of the concentration existed in the as - grown crystals. the radial concentration distribution has relatively high uniformity
通過觀察生長態晶體中的微觀組織形貌，並測量晶體軸向和徑向上不同位置處的成分、紅外透過率和x射線回擺曲線，發現晶內有較長的單晶段和軸向成分穩定區。 -
In this paper, pure and doped ktp crystals were grown from the flux using a top - seeded method, and special technique have been used to lower the electrical conductivity to three orders of magnitude than common flux ktp, the values is up to 10 - 10 ( cm ) - 1, this overcame the shortcoming that common flux ktp cannot be used in e - o application field because of having higher electrical conductivity. the growth condition, doped elements and annealing technology were investigated. single crystals of ktp with high quality and big z - cut cross section were obtained by optimizing the parameter of crystal growth
本實驗採用頂部籽晶熔劑法生長了純的以及不同摻雜的ktp晶體，用特殊工藝處理技術將普通熔劑法ktp的電導率降低了三個數量級，達到了10 ~ （ - 10 ） （ cm ） ~ （ - 1 ） ，解決了普通熔劑法ktp晶體由於離子電導率太大而無法用於電光應用領域的困難；對ktp晶體的生長條件、摻雜元素以及退火工藝等進行了研究，通過優化生長工藝技術參數，突破了工藝技術生長難關，得到了高光學均勻性、具有大z切面的ktp單晶。 -
The grown solution of dkdp crystal was synthesized firstly, then the relationship between concentrations of metal ion impurities and critical supersaturation was discussed by the measurement of metal ion impurity concentrations
本文首先合成了dkdp晶體生長溶液，測定了合成溶液中部分雜質金屬離子的含量，討論了雜質金屬離子濃度和臨界過飽和度之間的關系。 -
Moreover, by adjusting the technological parameters, polycrystalline diamond films grown preferentially along the different crystal orientations can be prepared
而且通過調節工藝參數，可制備出沿不同晶向擇優生長的多晶金剛石薄膜。 -
Abstract : the defects such as inclusion, splitting, dislocation and dendrite in the pbxla1 - x ( zry tiz sn1 - y - z ) o3 ( plzst ) single crystal grown from pbo - pbf2 flux by the slow cooling self - seeding technique were discussed in this paper. the forming mechanism of these defects were analyzed and some measures to eliminate the defects were proposed
文摘:本文介紹了助熔劑緩慢降溫自發成核法生長的稀土摻雜鋯鈦錫酸鉛鑭（ plzst ）晶體中出現的幾種缺陷：包裹體、開裂、位錯、枝晶，分析了這些缺陷的形成機理並提出了減少和消除這些缺陷的一些措施。 -
In this thesis, the mechanism of high conductivity along c direction in ktp crystal grown by high temperature solution method was firstly elucidated. a scheme of doping certain elements to reduce the conductivity of ktp crystal along c direction was put forward
本文首先闡述了導致高溫溶液法生長的ktp晶體c向電導率較高的形成機理，提出採用摻入特定元素的離子來降低ktp晶體c向電導率的方案。 -
The liquid - phase synthetic method was improved to obtain the sedimentation of yvo4, which makes the procedure more convenient and the sedimentation more compact. based on the syntheses of the raw materials, the czochralski method was used to grow the crystal from different charges. by comparing with the spectrum in the ultra - violet region of the yvo4 crystals grown in the same condition, the result was reached that the presence of the 1552 absorption peak is independent of the direction of the crystal growth and the annealing, but is related to the impurity of the charges
採用多種方法合成了用於晶體生長的yvo _ 4原料，改進了液相合成法中獲得yvo _ 4沉澱的方法，使得該方法更為簡便，獲得的沉澱更加緻密；在原料合成的基礎上，採用提拉法對來源不同的生長原料進行了生長，並通過對在相同氣氛下生長的晶體的紫外透過譜線的對比，指出了該吸收峰的存在與晶體生長方向及有無退火無關，進而提出該吸收峰的存在與合成原料中有無雜質有關。 -
With more than twenty five years efforts and cultivation in target market, our yearly sales revenue has grown significantly. our product lines include more than 20 prestigious brand names such as agere, citel, clare, crystalmedia, generalsoft, jennic, kionix, legerity, micro crystal, perkinelmer, richtek, tda and so on. the number of vendor is still growing
幸賀現有的代理線包括agere citel clare crystalmedia generalsoft jennic kionix legerity micro crystal perkinelmer richtek tda等重量級廠商，以及其他涵蓋相機手機有線及無線通訊產品電腦醫療器材數位家庭感應器軟體以及消費性電子產品的先進技術廠商，共計20餘家業者，且數量還在持續增加中。 -
The decay time of the crystal grown in our lab reaches advanced international level
衰減時間及快慢成分比例達到國際先進水平，在國內屬于首次報道。 -
And that is how, on one and the same crystal, although it has grown quite naturally, completely different colours can occur, mostly in elongated columns one above the other, as if nature had piled coloured rings one on top of the other
因此，在同一個自然生長的晶體，是極有可能會出現許多不同的顏色。通常它的生長模式是順著縱向一層一層的加上不同的顏色，就好比製作多層彩色果凍般，在每一層顏色上加上另一層不同的顏色。 -
The test result of the rene95 sample showed that the maximum ultimate tensile strength can be as high as 1400mpa and has reached 97. 9 % of that of the sample fabricated by powder metallurgy ( pm ). the plastic elongation of the test sample can even exceed that of pm. the ultimate tensile strength of the test sample grown from single crystal substrate has surpassed 6 % of that of grown from the stainless steel substrate, at the same time the plastic elongation surpassed 40 %
對成形試樣的力學性能測試結果表明，強度方面_ b最大為1400mpa ，已經達到了粉末冶金的97 . 9 ，塑性方面甚至超過了粉末冶金的水平；以單晶為基材的成形試樣其最大拉伸強度要比不銹鋼為基材的試樣高6 ，延伸率要高40 。
分享友人