growth of crystal 中文意思是什麼
growth of crystal
解釋
晶體生長-
Growth of pbi2 single crystal with ascending u type ampoule
型坩堝上升法生長碘化鉛單晶體 -
Studies on the preparation of aragonite whisker and its growth mechanism are meaningful at theory and practice to develop traditional calcium carbonate industry, new materials and theory of crystal growth
制備文石相碳酸鈣晶須的研究對促進我國傳統碳酸鈣產業、新材料的開發以及晶體生長理論的發展都具有重要的理論意義和實踐意義。 -
Controlling solid - liquid interface configuration during crystal growth of cdznte by vertical bridgman method
晶體時固液界面形狀的控制 -
The activation energies of crystal growth were calculated to be 15. 9kj mol " 1 and 148. 7kj mol " 1 respectively. cerous nitrate as originating material, ammonium hydrogen carbonate as precipitator, nanocrystalline cec > 2 powders were prepared by precipitation process. during the experiment, reacting solution was heated by microwave energy
採用碳酸氫銨作為沉澱劑，聚乙二醇等表面活性劑為保護劑，採用逐滴加入沉澱劑，微波加熱代替傳統加熱的均相沉澱法，制備出了粒度小、分散性好的ceo _ 2納米粉體。 -
Through the analyzing the macro - structure to micro - structure, the author considers that retarding mechanism of citric acid is that citric acid and ca in the gypsum form the complexant ion, and hinder the crystallization center of dihydrate crystal bigger ; that of sodium tripolyphosphate is that it combined with ca, hinders the dissolve of hemihydrate. formation and growth of crystallization center ; that of bone glue is the glue - protection and chemical absorption action of active group, which also retards the formation and growth of crystallization center
通過宏觀到微觀的分析，筆者認為，檸檬酸的緩凝作用的原因主要在於檸檬酸與鈣形成絡合離子，影響了二水石膏晶體的晶核長大過程；多聚磷酸鈉與鈣形成某種復鹽，對于石膏晶體的溶解、成核和長大過程均有強烈的阻礙影響；骨膠則在於膠體對半水石膏的包裹和活性基團的化學吸附，使二水石膏晶體的成核和長大困難。 -
Preferred growth of nanosized crystal silicon in doped hydrogenated nanocrystalline silicon film
薄膜中納米硅晶粒的擇優生長 -
The experimental results show that the cycle of the mother liquid increases the yield of the product, the seed crystal can improve long - diameter ratio remarkably, the proper additive reduces the speed of crystal growth and make size distribution homogenize. through appending different seed crystal and bivalent lead at one time, we may receive when the content of the seed crystal is 0. 075 % and pb2 + is 20 - 50ppm, the yield of the basic magnesium chloride whisker is high and crystal shape is good. the surface active agent can improve dispersion performance of the basic magnesium chloride whisker
研究結果表明：母液循環可以提高堿式氯化鎂晶須的產率；添加晶種可明顯的改善晶形；合適的添加劑可以降低晶體生長速度並可提高晶須的粒徑分佈；而同時加入不同用量的晶種和pb ~ （ 2 + ） ，試驗結果表明晶種含量在0 . 075 ， pb ~ （ 2 + ）在20 50ppm時，晶須的產率高，晶形好；表面活性劑對產品的分散性能有所改進。 -
Starting in october, the u. s. postal service will issue a set of four stamps featuring pictures of snowflakes taken by kenneth libbrecht, a professor of physics at the california institute of technology. for years, libbrecht has been studying the physics of snowflakes, looking at the different patterns of crystal growth and snowflake formation
從今年10月份開始，美國郵政總局將發行一套印有雪花圖片的郵票，這些圖片均是由美國加州理工學院的物理學教授肯尼斯裡布雷希特經過多年野外作業拍攝到的雪花照片。 -
Ultrafine powder, the high quality ultrafine power has been got. ( 2 ) the perfect rutile has been got with flame fusion method in developed domestic sjz sintering machine, and the technology of crystal growth has been clearly analyzed. in the end the suitable techniche has been got on the basis of systemic study on the conditions of growth
通過對晶體生長中的籽晶方向、氣氛等的作用的大量深入的研究，得出了金紅石晶體焰熔法生長現階段的最佳工藝條件，即籽晶（ 001 ）在氫氧比為1 ： 1的附近，通過加氫進行擴肩，然後在1450加氧退火24hr后就能夠獲得完整透明的金紅石單晶。 -
Abstract : in view of the crystal structure, this paper repo rts thecharacter of single crystal growth of germanate and the properties as me dium of laser crystal. the study and progress in germanate crystals used as widel y tunable laser crystal, self - doubling - frequency crystal and highly efficient and low pumping threshold laser crystal are introduced
文摘:從晶體結構上分析了鍺酸鹽的單晶生長和作為激光晶體基質的特點，並介紹了鍺酸鹽作為可調諧激光晶體，自倍頻晶體，高轉換效率和低泵浦閾值的激光晶體的研究及進展。 -
The microtube zno econtrollable growth on the glass substrate, which was previously deposited, of zno hollow spheres was researched. the results showed that zno hollow spheres acted as crystal nucleus of zno microtubes. by this method regular zno microtubes were synthesised. the growth of microtubes can be controlled by change the size of zno hollow spheres
結果發現zno中空球層對zno微米管的生長起到了晶核的作用，能夠在玻璃襯底上形成形貌規則的zno微米管;改變zno中空球的粒徑能夠改變所形成的zno微米管的尺寸，從而實現了對zno微米管的可控生長。 -
And it is difficult to apply general pid control or fuzzy control to the equipment of crystal growth with nonlinear and great pure hysteresis characteristics
晶體生長爐具有參數時變、大慣性和大純滯后的特點，應用常規pid控制演算法，動態性能不理想；應用模糊控制演算法，穩態精度不能令人滿意，都難以實現有效的控制。 -
For years, libbrecht has been studying the physics of snowflakes, looking at the different patterns of crystal growth and snowflake formation
這些精美的照片也揭示了一個事實，那就是世間不會有兩朵相同的雪花。 -
We have found the best ways to optimize the growth of quality zno films and got highly c - axis oriented zno films. the microstructures of the films were observed by afm. after analyzing the crystal structures, the crystal tropism and the surface conformation flatness, we found the result that the substrate temperature of 400 ? is ideal for silicon substrates, which conforms to the result of the structure analyse. by analyzing the magnetism of zno films, we found that the films appropriately doped with fe, co ions have magnetism at room temperature and their magnetism can be improved by doping other little cu ion, but it is not certain that the content of cu is higher, the film has more magnetism, so it has the best content of cu. moreover, the films which have best crystal structures may not have the best magnetism
我們採用原子力顯微鏡（ afm ）方法觀察薄膜的顯微結構，利用所得的圖象信息對薄膜的晶粒結構、晶粒取向、表面形態平整度等進行分析討論，認為400的襯底溫度對硅襯底薄膜是合適的，與結構分析的結果一致。通過對薄膜磁性能的分析和研究，我們得出一些有意義的結果：適量過渡金屬離子fe 、 co摻雜的zno薄膜，在室溫下具有鐵磁性，而在此基礎上摻入少量的cu離子能改善薄膜的磁性。摻cu量有個最佳值，而且結構最好的薄膜磁性不一定最好。 -
Abstract : while we were analyzing the proposed theory about the crystal growth, we doubted that the interface phase existed in the process of crystal growth. with this, we had looked for a lot of references connected and analyzed them. we find that the interface - phase does exist in the process of crystal growth and takes a critic role. therefore, we divide the interface - phase into three co - relative parts : interface layer, adsorptive layer and transitive layer. base on the above ideal, we demonstrate the role of interface layer, adsorptive layer and transitive layer in the process of crystal growth respectively. furthermore, we proposal the interface - phase model about the crystal growth
文摘:在分析前人的晶體生長理論時，作者認為晶體生長過程中可能存在界面相；在分析各種晶體生長現象后認為，晶體生長過程中界面相是存在的，並起著十分重要的作用；通過分析研究，將晶體生長過程中的界面相劃分為3個有機的組成部分：界面層、吸附層和過渡層；並進一步論述了界面層、吸附層和過渡層在晶體生長過程中的地位與作用；在此基礎上提出了界面相模型。 -
Abstract : the affects of crystal absorption for heat radiation on crystal growth, which include : the heat loss of the hot grower, the chara - cteristic of temperature - time of crystal growth, the pattern of fluid flow and the shape of interface, the interface inversion of crystal, the temperature distribution and the thermal stress distribution, are reviewed in this paper
文摘:本文綜述了晶體對熔體熱輻射吸收對晶體生長的影響，包括對熱腔熱耗散的影響；對晶體生長溫度時間特性的影響；對液流形態和固液界面形狀的影響；對晶體界面反轉的影響；對晶體中溫度分佈和應力分佈的影響。 -
In this paper, pure and doped ktp crystals were grown from the flux using a top - seeded method, and special technique have been used to lower the electrical conductivity to three orders of magnitude than common flux ktp, the values is up to 10 - 10 ( cm ) - 1, this overcame the shortcoming that common flux ktp cannot be used in e - o application field because of having higher electrical conductivity. the growth condition, doped elements and annealing technology were investigated. single crystals of ktp with high quality and big z - cut cross section were obtained by optimizing the parameter of crystal growth
本實驗採用頂部籽晶熔劑法生長了純的以及不同摻雜的ktp晶體，用特殊工藝處理技術將普通熔劑法ktp的電導率降低了三個數量級，達到了10 ~ （ - 10 ） （ cm ） ~ （ - 1 ） ，解決了普通熔劑法ktp晶體由於離子電導率太大而無法用於電光應用領域的困難；對ktp晶體的生長條件、摻雜元素以及退火工藝等進行了研究，通過優化生長工藝技術參數，突破了工藝技術生長難關，得到了高光學均勻性、具有大z切面的ktp單晶。 -
Company operation scope focuses on crystal growth and slicing, lapping and polishing of crystal wafers
兆晶科技的主要製程有鉭酸鋰晶圓之長晶、切片、研磨、拋光等。 -
In the research on the physical and chemical properties of chromium, afm was first used to explore the effect of technological conduction to the topography of coating deposited, the size of crystal grain and the regularity of the growth of crystal grain
在對鍍鉻層理化性能研究方面，論文採用afm首次觀察到電鍍工藝條件與鍍層形貌、晶粒尺寸、晶粒生長規律之間的關系。 -
Furthermore, the growth and the study of self - organized quantum dots structures become more and more important recently, and the application of self - organization technique become wider and wider in this thesis, we address the theory of film growth and the growth technique firstly more, the ways and characteristics of surface detection are prescribed we mainly report the growth process, results and discuss of self - organized quantum dots structures in the a12o3 substrates by s - k mode using ecr - mocvd, in the espd - u device the growth art of ain epilayer which is the preliminary foundation of self - organized gan / ain quantum dots structures, including the substrate cleaning, nitridation, the growth of buffer and the growth of gan and ain epilayer, is discussed we deliberately compare the test result of rheed xrd and afm and achieved the optimalized condition of ain at last we have successfully realized the growth of ain which is much smooth and better crystal quality moreover, we grow the self - organized gan / ain quantum dots structure in s - k mode because the limits of the heater temperature, we can not grow the atom - smooth epilayer of ain until now so we could not grow better quantum dots which have small diameter and big density but the self - organized quantum dots structures with better quality will be realized successfully if the substrate temperature is increased the thesis study belong to my tutor subject of national nature science foundation ( 69976008 )
本論文主要論述了在espd - u裝置上，採用電子迴旋共振等離子體增強mocvd （ ecr - pamocvd ）方法，在藍寶石襯底上通過s - k模式自組裝生長gan aln量子點結構的生長工藝、結果及討論。而重點分析了自組裝生長量子點之前的aln外延層生長工藝，包括襯底清洗、氮化、緩沖層的生長和gan 、 aln外延層的生長；通過高能電子衍射、 x射線衍射和原子力顯微鏡測試，並且對這些測試結果進行了詳細的比較研究，得出了較優化的工藝條件，生長出了晶質較好、表面較平整的aln外延層；進而採用s - k模式自組裝生長了gan aln量子點結構。由於實驗裝置加熱爐溫度的限制，我們沒有能夠生長出原子級平滑的aln外延層表面，因而沒能夠生長出密度比較大和直徑比較小的量子點。
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