integrated semiconductor device 中文意思是什麼
integrated semiconductor device
解釋
集成半導體掐- integrated : adj. 完整的，完全的。 an integrated iron and steel works 鋼鐵聯合企業。 an integrated oil company 大型石油（聯合）公司。
- semiconductor : n. 【物理學】半導體。
- device : n. 1. 設計，計劃；方法，手段。2. 〈pl. 〉意志，慾望。3. 謀略，策略，詭計。4. 器具，器械，設備，裝置。5. 圖案，圖樣；花樣；紋章；標記，商標；（紋章上的）題銘。
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As one kind of si nanostructures, si - rich si02 films are the important si - based light - emitting materials. moreover, silicon is the leading semiconductor in the microelectronic industry. furthermore si02 films as passitive and insular layers are widely used in si device and integrated circuit. so si - rich films are considered suitable for optoelectronic applications
另一種觀點認為納米硅薄膜中的可見光發射來自界面或介質層中的發光中心。還有人認為對于鑲嵌在sio _ 2中的納米晶粒來說，與氧有關的缺陷可能是導致可見光或藍綠光發射的主要原因。 -
The experiment results are valuable to the research of infrared lens, laser window, integrated optical device, the device for blue semiconductor laser, optical detector, nonlinear device, optical waveguide, thz emitter and other devices the following is a brief summary of the works conducted in this thesis and the results achieved
實驗結果有助於這些材料作為紅外透鏡、激光窗口、集成光學器件，藍光半導體激光器件、光探測器件、非線性光學器件、波導調制器件、 thz發射器件等的研究。 -
Since metal - oxide - semiconductor ( mos ) device appeared, integration of integrated circuit ( ic ) expands as moore law. meanwhile the dimension of device scales down, the thickness of sio2 gate dielectric shrinks as the same law. but as the thickness of sio2 gate dielectric reaches at isa, the gate current rises very quickly and reaches at 1 10a / cm2
自從金屬-氧化物-半導體（ mos ）器件出現以來，集成電路的集成度按照摩爾定律增加，相應地，器件的物理尺寸按照等比縮小的原則不斷縮小， sio _ 2作為柵介質的厚度不斷縮小，特徵尺寸在0 . 1 m以下的集成電路要求sio _ 2柵介質的厚度小於1 . 7nm 。
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