intrinsic semiconductor 中文意思是什麼
intrinsic semiconductor
解釋
本針導體- intrinsic : adj. （opp. extrinsic）1. 內在的；本來的；真正的，實在的。2. 【解剖學】內部的，體內的。
- semiconductor : n. 【物理學】半導體。
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Duo to the intrinsic characteristics of the gaas material, serai - insulating ( si ) gaas photoconductive semiconductor switches ( pcss " s ) have more obvious advantages in the performance of both high power and ultra - fast switching than those pcss " s made of other materials and then can be widely used in ultrahigh speed electronics, field of high power microwave generation and pulse forming ( pulse sources of high power ultra - fast electromagnetism, ultra - wide - band microwave generator )
半絕緣gaas光電導開關（ photoconductivesemiconductorswitches簡稱pcss ' s ）具有兼備寬頻帶和高功率容量特性，使其在超高速電子學和大功率脈沖產生與整形技術領域（大功率亞納秒脈沖源、超寬帶射頻發生器等）具有廣泛應用前景。 -
In addition, integrated circuits and semiconductor devices are generally made with single - side polished wafers, therefore the results of this work indicate that nanocavity - gettering technique is practical in manufacture of devices. finally, the gettering uniformity is demonstrated directly on samples. the gettering results of au to oxygen intrinsic precipitation and to the nanocavity formed by helium ion implantation were compared and discussed in this paper
本文還對實驗樣品中存在的氧沉積、晶格損傷對金雜質的吸除效果，與注氦誘生微孔的吸雜效果進行了比較和討論，進一步證實了注氦誘生微孔吸除金雜質的均勻性，並加深了對微孔吸除機理的理解。 -
Aiming at the feature of cm interference in power converters, a new approach ? intrinsic dynamic nodes potential balance is proposed. by building node pair with balance potential and making use of the intrinsic stray capacitor of power semiconductor devices, the cm current can be suppressed effectively
在對共模干擾建模的基礎上，提出了內在動態節點電位平衡的思想，其思路是通過在電路內部構造動態電位平衡節點對，並利用電路中功率器件固有的對地分佈電容使得電路中的共模干擾電流互相抵消，從而抑制功率變換器的共模emi 。 -
Due to its intrinsic merits, such as wide band gap, high electron saturated drift velocity, high melting point, good coefficient of thermal conductivity, anti - radiation and good chemical stability, gallium nitride as a direct band gap semiconductor has become the promising material for the application of short - wave light - emitting devices and high temperature, high frequency and high power electronic devices
Gan是直接帶隙半導體材料，以其禁帶寬度大、電子飽和漂移速度大、熔點高、熱導率高、抗輻射能力強和化學穩定性好等優點成為製造短波長光發射器件及高溫、高頻、大功率電子器件的理想材料。
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