ion etching 中文意思是什麼

ion etching 解釋
離子刻蝕
  • ion : n. 【物理學】離子。 positive [negative] ion正[負]離子。
  • etching : n. 1. 蝕刻法；蝕刻（銅）版畫；蝕鏤術。2. 蝕刻畫，蝕刻版，蝕刻版印刷品。
  1. Yak hairs were treated by the microwave electron cyclotron resonance plasma reactive ion etching ( ecr - rie ) equipment to improve its property of weave

    摘要採用微波電子迴旋共振等離子體反應離子刻蝕（ ecr - rie ）裝置對氂牛毛纖維進行表面改性，從而改善氂牛毛的可紡性。
  2. Lin h, li l and zeng l., " in - situ end - point detection during ion - beam etching of multilayer dielectric gratings ", chin. opt. lett., 3 ( 2 ), 63 ( 2005 )

    林華， "介質膜光柵:光刻膠掩模占寬比和離子束刻蝕槽深的監控" ，博士論文，導師:李立峰（ 2006 ）
  3. Influence of ion - beam etching incidence angle on slope of pattern sidewall

    光線斜入射對光柵常數測量的影響
  4. The feasibility that kaufman ion source is applied in reactive ion beam etching is discussed. etching characteristics of materials, including pr, cr, quartz, are investigated. the etch rate and mechanisms of such materials are measured and analyzed as a function of ion energy, ion beam density and ion incidence angle in pure ar and chf3, respectively. the etch rate has shown a square root dependence on variation versus

    深入研究了光刻膠、鉻薄膜、石英等光學材料離子束刻蝕特性，分別以ar氣和chf3為工作氣體，研究光刻膠、鉻薄膜、石英等的刻蝕速率隨離子能量，束流密度和離子入射角度的變化關系，得到刻蝕速率與影響因素的擬合方程，為掩模的製作工藝路線提供了實驗依據和理論指導。
  5. The submicron ring, laser beam shaper and fresnel lens is fabricated by ion etching according to the selected parameter

    依照這些參數刻蝕出了高質量的特徵尺寸為亞微米的環、光束整形元件和菲涅耳透鏡等元件。
  6. In the present works, a self - consistent model describing the dynamics of radio - frequency ( rf ) sheath was established. the effects of collisions on the rf sheath dynamics, distributions of ion energy and angle incident on the substrate and the etching profiles were investigated numerically

    本文建立了一套自洽的碰撞射頻等離子體鞘層理論模型，系統地研究了碰撞效應對等離子體鞘層的物理特性、離子入射到基板上的能量分佈和角度分佈以及刻蝕剖面的影響。
  7. In the section of fabricating technology, i first discuss the ion beam technology. through the analysis of the effects of each parameter on the surface smoothness, profile fidelity and linewidth resolution in the process of ion etching, the suitable angle of incident ion beam, ion energy, density of ion beam and time of etching are selected combining the actual status of the mask

    在製作工藝的研究方面，首先研究了離子束刻蝕技術，通過對離子束刻蝕過程中各個參數對刻蝕元件的表面光潔度、輪廓保真度和線寬分辨的影響分析，結合掩膜的實際情況選擇出了合適的離子束入射角、離子能量、束流密度和刻蝕時間等參數。
  8. This paper studies the application of inductively coupled plasma ( icp ) technology to the etching compound semiconductor insb - in film. by means of single probe and double probe, the ion density and electron temperature of chamber ( 30mm and 50mm in height respectively ) under varied process condition were diagnosed. the spatial distribution of the axial position of the two parameters and the varied curve that the two parameters varies with the power and air pressure are obtained

    利用單探針和雙探針診斷30mm高反應室和50mm高反應室在各種工藝條件下的離子密度和電子溫度，得到這兩個參數在反應室軸向位置的空間分佈、隨功率和氣壓的變化曲線、頂蓋接地和反應室體積對它們的影響，結果表明離子密度為10 ~ 8 10 ~ （ 10 ） cm ~ （ - 3 ） ，電子溫度在4 10ev之間；當頂蓋接地時，該處的等離子體密度明顯大於不接地；在同樣條件下， 50mm高反應室內的離子密度明顯大於30mm高反應室。
  9. Generic specification of ion beam etching system

    離子束蝕刻機通用技術條件
  10. Reactive ion beam etching system ribe system

    反應性離子束蝕刻系統
  11. Poles - etching method is that the etching current caused by the external voltage is used to promote the intermediate ion product break away from the surface of substrate and keep the etching rate stable

    電極腐蝕法是指在激光腐蝕的過程中，通過外加電壓在溶液中形成腐蝕電流，促使中間離子產物脫離基片表面，使腐蝕持續穩定進行。
  12. A large number of attempt and painstaking experiment have been done in this paper according to existing project. we also do lots of chemical and electrochemical etching research in material of lab6, and find out three kind of methods to produce the field emitting cold cathode including reactive ion etching ( rie ) with oxygen, wet process etching and electrochemical etching. through produce some field emitting cold cathode single tip including lab6 field emitting cold cathode, molybdenum field emitting cold cathode, tungsten field emitting cold cathode, tungsten rhenium field emitting cold cathode, molybdenum covered with lab6 film field emitting cold cathode

    而且，目前可借鑒的參考文獻較少，圍繞著前人做過的方案，本文做了大量工作，在已有文獻介紹的基礎上，結合原有的理論和實踐基礎，摸索出了包括高溫氧作用反應離子（ rie ）刻蝕法、濕法腐蝕法和電化學腐蝕法在內的三種制備工藝，運用電化學腐蝕工藝成功制備了單尖的六硼化鑭場發射冷陰極尖錐、鉬場發射冷陰極尖錐、鎢場發射冷陰極尖錐、鎢錸合金場發射冷陰極尖錐以及有六硼化鑭薄膜覆蓋的鉬場發射冷陰極尖錐。
  13. Compared with the conventional chemical etching, laser assisted wet chemical etching can eliminate the effect of crystal orientation efficiently and fabricate more diversified etched pattern ; compared with the laser assisted gas chemical etching, the required condition for laser wet etching can be realized more easily and the operation can be simplified ; compared with the ion etching, it has advantages of no ion damage to substrate, avoiding over - etching and cost - effective

    半導體的激光誘導液相腐蝕與普通化學腐蝕相比，可以有效地消除晶體取向影響，製作出更加多樣化的腐蝕圖形;與激光誘導氣相腐蝕相比，其工藝條件更加容易實現，操作更加簡單;與干法離子刻蝕相比，對基片無離子損傷，過度腐蝕容易控制，成本低。
  14. Narrow gap reactive ion etching system

    狹窄間隙反應性離子蝕刻系統
  15. Lin h, li l and zeng l., " in - situ monitoring during ion - beam etching of multilayer dielectric gratings : simulation and experiment ", holography, diffractive optics, and applications ii, spie, 5636, 143 ( 2004 )

    林華，李立峰，曾理江， "利用導波耦合角度實時控制光刻膠光柵掩模的占寬比" ，光學學報， 26 ， 767 ? 772 （ 2006 ）
  16. By studying and using conventional 1c process in combination with electron beam lithography ( ebl ), reactive ion etching ( rie ) and lift - off process, several efficient results are produced : semiconductor and metal nano - structures are fabricated ; the matching problem of photolithography and electron beam lithography is well solved ; the process efficiency is improved ; the process is offered for the controlled fabrication of nano - structures by repetitious process testing ; several nano - structures such as si quantum wires, si quantum dots, double quantum dot structures and tri - wire metal gate are firstly fabricated by using ebl and rie processes

    研究利用常規的硅集成電路工藝技術結合電子束光刻，反應離子刻蝕和剝離等技術制備半導體和金屬納米結構，很好地解決了普通光刻與電子束光刻的匹配問題，提高了加工效率，經過多次的工藝實驗，摸索出一套制備納米結構的工藝方法，首次用電子束光刻，反應離子刻蝕和剝離等技術制備出了多種納米結構（硅量子線、量子點，雙量子點和三叉指狀的金屬柵結構） 。
  17. The theory of ion etching and the parameter of ion source designing are discussed in detail

    並且詳細介紹了離子刻蝕和離子源的原理。
  18. The reactor is capable of working in the rie ( reactive ion etching ) mode and also in the plasma etching mode

    反應腔擁有在rie （反應離子刻蝕）模式和等離子刻蝕模式下工作的能力。
  19. Reactive ion etching system rie system

    反應性離子蝕刻系統
  20. We give some useful analyses and the computer simulations for the ion etching process. compared with the atomic force microscope ( afm ) scanning photograph of the etching surface, the theoretical results prove that these simulation analyses assure the precision required by this problem, so these mathematical models are reasonable and correct. the analysis method in this paper is useful to analyze etching process, and it can also afford some valuable reference to etching technology

    在本論文我們主要利用這個數學模型，對使用離子束刻蝕製作單臺階光柵的臺階與溝槽部分的表面面形隨時間的演變過程分別進行了計算機模擬分析，並通過把理論結果與在實驗中得到的刻蝕表面在原子力顯微鏡（ afm ）下拍攝的照片進行比較，結果說明這種模擬分析能夠保證對該問題分析所要求的精度，從而也證明了理論模型的合理性和正確性。
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