ion implantation gettering 中文意思是什麼

ion implantation gettering 解釋
離子注入吸除
  • ion : n. 【物理學】離子。 positive [negative] ion正[負]離子。
  • implantation : n. 1. 種植。2. 插入；灌輸，鼓吹。3. 【醫學】皮下注射。
  • gettering : 除氣
  1. The gettering processes usually are estimated by gettering of au to nanocavity in silicon. in this paper, the characteristics of nanocavity gettering mechanism, diffusion and distributing of aurum and ion implantation in silicon were described. in this work, many bumps on the polishing surface of the silicon, after a he + impantation in and subsequently a hot - treatment, were observed using atomic force microscope ( afm )

    我們注意到，在研究氫、氦離子注入誘生微孔的吸除作用時多以對金雜質的吸除效果來對吸除工藝進行評估，因此本文對微孔吸除機理、金在硅中的擴散和分佈以及半導體中離子注入的特點進行了描述。
  2. In addition, integrated circuits and semiconductor devices are generally made with single - side polished wafers, therefore the results of this work indicate that nanocavity - gettering technique is practical in manufacture of devices. finally, the gettering uniformity is demonstrated directly on samples. the gettering results of au to oxygen intrinsic precipitation and to the nanocavity formed by helium ion implantation were compared and discussed in this paper

    本文還對實驗樣品中存在的氧沉積、晶格損傷對金雜質的吸除效果，與注氦誘生微孔的吸雜效果進行了比較和討論，進一步證實了注氦誘生微孔吸除金雜質的均勻性，並加深了對微孔吸除機理的理解。
  3. Some previous experiments have showed that cavities had more efficient gettering than p - diffusion, mechanical damage and ion implantation. most of studies about cavities gettering are concentrated on the peculiarity of cavities gettering metal impurities intentionally into silicon wafer from the viewpoint of basic study. this technique especially applied to low - contamination process, how ever, has not been carefully studied, which should be important to the semiconductor manufacturing

    而過去的工作多集中在從基礎研究的角度研究氦微孔對有意摻入金屬雜質的矽片的吸除特性，對無意引入的低濃度金屬雜質的器件吸雜效果的研究卻非常少，這方面的研究是氦微孔技術走向實際應用的必經之路。
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