ionization potential 中文意思是什麼

ionization potential 解釋
電離電勢,電離電位
  • ionization : n 【物理學】電離(作用);離子化。 ionization by impact [light] 碰撞[光感]電離。 ionization const...
  • potential : adj 1 可能的;【語法】可能語氣的。2 潛在的;有潛勢的;【物理學】位的,勢的。3 〈罕用語〉有力的。n...
  1. Ab initio study on molecular structure and vertical ionization potential for pun

    分子的結構與垂直電離勢的理論計算
  2. Ab initio study on potential energy function and vertical ionization potential for puo molecule

    分子勢能函數與垂直電離勢的量子化學計算
  3. In this paper, we study the vdw ( c6h5ch3. . n2 ar ) vibrations in complexes by using a combined experiment and theoretical studies of resonant ionization spectra. for complexes, vdw vibration levels are calculated by the quantum method of linear - combination of three - dimensional harmonic oscillator products and lennard - jones potential, which is very close to the experimental spectrum

    本文採用理論和實驗的方法對vdw復合物c _ 6h _ 5ch _ 3 … n _ 2 、 ar進行了研究,並用三維線性諧振子波函數和納能-瓊斯勢函數的量子計算方法得出vdw復合物的振動能級,計算值和實驗光譜相符合。
  4. Then we also investigate the high harmonic generation and ionization of the long - range and short - range potential atoms by using numerical solution of the time - dependent schrodinger equation for a one - dimensional atom in intense laser fields

    ) dinger方程,研究了具有相同基態能量的一維長程勢原子和短程勢原子產生高次諧波和電離幾率的特點。
  5. It is found that the intensities of high harmonic generation for both cases are similar, but the short - range potential atom does not radiate the low - order harmonic spectra, and the ionization probabilities of the long - range and short - range potential atoms as a function of the laser intensity are obviously different

    在強激光場中,長程勢原子和短程勢原子產生的高次諧波對應的平臺和截止位置相同,但是短程勢原子沒有低階的高次諧波,而長程勢和短程勢原子在激光場中的電離幾率明顯不同。
  6. Potentional energy function and vertical ionization potential of boron chloride molecule and molecular ions

    氯化硼分子及離子的勢能函數與垂直電離勢
  7. Because of the great potential of sic mosfets and circuits, in this paper, the characteristics of 6h - sic pmosfets are studied systematically, emphasizing on the effects of interface state and s / d series resistance on sic pmosfets firstly, the crystal structure of silicon carbide, the phenomena of incomplete ionization of the impurity and the fitting formula of hole mobility are presented. the characterization in space - charge region of sic pmos structure is analyzed by solving one dimension poisson equation

    研究了sic的晶體結構,分析了sic中雜質的不完全離化現象以及sic中空穴遷移率的擬和公式;用解一維poisson方程的方法分析了sicpmos空間電荷區的電特性;本論文重點分析了界面態分佈和源漏串聯電阻對sicpmos器件特性的影響。
  8. Possible geometrical structures and relative stability of semiconductor microclusters ganpn ( n = 1 - 5 ) are studied by using density functional calculations with generalized gradient approximation ( b3lyp ). for the most stable isomers of ganpn ( n = 1 - 4 ) clusters, the electronic structures, vibrational properties, dipole moments, polarizability and ionization potential are analyzed using hf, mp2, cisd and b3lyp methods with different basis sets

    用梯度修正的密度泛函方法( b3lyp 6 - 31g )優化了ga _ np _ n ( n = 1 - 5 )團簇的可能幾何構型,計算了各穩定構型的的振動光譜,並用不同方法( hf 、 mp2 、 cisd等)研究了各穩定構型的電子結構、電離勢、偶極矩和極化率等性質。
  9. The boundary radius of an atom ( ion ) is defined by the classical turning point equation ( ( r ) = - i, where i denotes the first ionization potential of the atom ( ion ). the boundary radii of atoms and ions of elements from first - to fifth - row in the periodic table are obtained

    對于中性原子,假設此時的能量等於其第一電離能i的負值,即v ( r ) = - i 。我們定義原子核到r的距離為原子的內稟邊界半徑,簡稱為邊界半徑。
  10. Ab initio study on potential energy function and vertical ionization potential for puc molecule

    分子的結構與垂直電離勢的理論計算
  11. Potentional energy function and vertical ionization potential of se2x x

    分子離子的勢能函數與垂直電離勢
  12. Potentional energy function and vertical ionization potential of bbrn n

    溴化硼分子及離子的勢能函數與垂直電離勢
  13. Ab initio study on potential energy function and vertical ionization potential for puh molecule

    分子的勢能函數與垂直電離勢的理論計算
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