junction current 中文意思是什麼

junction current 解釋
結電流
  • junction : n. 1. 接合，連接，連絡。2. 接合點，交叉點，（河流的）匯合處，（鐵道的）聯軌點。3. 【電學】中繼線。4. 【物理學】接頭，結。
  • current : adj. 1. 通用的，流行的。2. 現在的，現時的，當時的。3. 流暢的；草寫的。n. 1. 水流；氣流；電流。2. 思潮，潮流；趨勢，傾向。3. 進行，過程。
  1. This condition, known as reverse bias, is not conducive to current flow through the junction.

    這種叫做反向偏置的狀態不利於電流穿越結。
  2. Standard test method of measurement of common - emitter d - c current gain of junction transistors

    結型晶體管共射極直流增益測量的標準試驗方法
  3. The factors limiting the frequency band of the wide - band amplifier are introduced. through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics, a method of improving fr of mosfet by using short channel device and making mosfet work at the saturation region through raising vgs is put forward ; the effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit, current pattern circuit and frequency characteristics are analyzed. according to the linear theory of transconductance which is applied in the bit circuit, the current pattern amplifier circuit, current transfer circuit and output circuit which consist of mosfet and the wide - band amplifier composed of them are put forward

    介紹了限制寬帶放大器頻帶寬度的因素，通過分析mosfet的本徵參數、寄生參數對頻率特性的影響，提出了採用短溝器件、使mosfet工作在飽和區、抬高柵源電壓等提高mosfet特徵頻率的方法；分析了不同電路組態對放大器頻率特性的影響、節點電壓對電壓模電路、電流模電路頻率特性的不同影響，根據應用於雙極晶體管電路的跨導線性原理，提出了採用mosfet構成的電流模放大電路、電流傳輸電路、輸出電路以及由它們所組成的寬帶放大器，獲得了良好的頻率響應。
  4. We introduce the fabrication of all samples and anneal of fexcu ( 1 - x ) granular film in detail. the configuration of granule film is investigated by scanning tunneling microscope ( stm ). the matter phase is analyzed by x - ray diffraction ( xrd ). the hysteresis loop of co / al2o3 / feni magnetic tunnel junction is studied by vibrating sample magnetometer ( vsm ). we use microresistance test system ( mts ) to investigate the character of resistance, conductance, voltage and current

    用掃描電子顯微鏡（ stm ）觀察顆粒膜樣品的表面形貌；用x ?射線衍射儀（ xrd ）對顆粒膜樣品進行物相分析；用振動樣品磁強計（ vsm ）對co al _ 2o _ 3 feni隧道結的磁滯回線作了研究；用微電阻測試系統對樣品電阻、電導、電流、電壓相關特性進行詳細的研究。
  5. And the results of calculation and numerical simulation indicate, without increasing the intrinsic collector - junction area of power devices, collector - combed structure helps to raise the intrinsic heat - dissipating area and base ' s perimeter, improve heat - dissipating method of each cell of the chip, enhance the distribution uniformity of junction temperature and current of each cell of the chip, reduce the thermal resistance and raise the dissipation power pd and output power p0, fairly well relax the contradiction among frequency, out - put power and dissipation power of the devices, and further improve the devices " property against second breakdown

    而計算分析和二維數值模擬分析結果表明：梳狀集電結（基區）結構在不增加器件本徵集電結面積的條件下，增大了器件的本徵散熱面積和基區周長，改進了每個子器件單元內的散熱方式，提高了單元內結溫和電流分佈的均勻性，降低了器件的熱阻，增大了器件的耗散功率和輸出功率，較好地緩解了目前傳統結構中頻率與功率、功耗的矛盾，並有利於改善器件抗二次擊穿的性能。
  6. Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet

    基於能量輸運模型對由凹槽深度改變引起的負結深的變化對深亞微米槽柵pmosfet性能的影響進行了分析，對所得結果從器件內部物理機制上進行了討論，最後與由漏源結深變化導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深（凹槽深度）的增大，槽柵器件的閾值電壓升高，亞閾斜率退化，漏極驅動能力減弱，器件短溝道效應的抑制更為有效，抗熱載流子性能的提高較大，且器件的漏極驅動能力的退化要比改變結深小.因此，改變槽深加大負結深更有利於器件性能的提高
  7. Theoretical analysis indicates, the two technology helps reduce the concentration of current, lower the peak junction - temperature, and effectively avoid the appearance of devices " breakdown caused by heat and current

    理論分析表明：上述兩種技術，有利於減小電流集中現象，降低器件峰值結溫，避免熱擊穿和二次擊穿的發生。
  8. Unfortunately, though the lifetime control technology reduces the stored charge, it increases the forward voltage drop ( vr ) and the reverse leakage current ( i, ). therefore, si pin diode cannot realize a good trade - off in qs - vf - i, -. the appearance of sige material and sige / si hetero - junction technology has changed this situation

    但少子壽命控制技術在減少存貯電賀q _ s的同時，也增大了正向通態壓降v _ f ，和反向漏電流i _ r ，因此很難實現qs - v _ f - i _ r三者良好的折衷關系。
  9. The junction voltage decreases with the increase of current above 10ma. there is an effect of the negative resistance

    當結電流增至20ina以後，隨電流的增加，結電壓減小，出現負阻現象。
  10. At the initial stage of planar technique, b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region, and the good shield effect of sio2 film to b. but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient, the linear slowly - changed distribution of acceptor b in pn junction can not be formed, which could not cater to the requirement of high - reversal - voltage devics. thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed, while the former can lead to relatively large the base - region deviation and abruptly varied region in si, which caused severe decentralization of current amplification parameter, bad thermal stability and high tr ; the latter needed the relatively difficult pack technique, with poor repeatability, high rejection ratio, and poor diffusion quality and productio n efficiency

    在平面工藝初期，由於b在硅中的固溶度、擴散系數與n型發射區的磷相匹配， sio _ 2對其又有良好的掩蔽作用，早被選為npn硅平面器件的理想基區擴散源，但b在硅中的固溶度大（ 1000時達到5 10 ~ （ 20 ） ，擴散系數小， b在硅中的雜質分佈不易形成pn結中雜質的線性緩變分佈，導致器件不能滿足高反壓的要求，隨之又出現了硼鋁塗層擴散工藝和閉管擴鎵工藝，前者會引起較大的基區偏差，雜質在硅內存在突變區域，導致放大系數分散嚴重，下降時間t _ f值較高，熱穩定性差；後者需要難度較大的真空封管技術，工藝重復性差，報廢率高，在擴散質量、生產效率諸方面均不能令人滿意。
  11. A new type of josephson junction array using current biased voltage steps can provide highly stable and accurate voltages

    一種新型的約瑟夫森結陣列使用了電流偏置的電壓臺階可以提供高穩定度、高準確度的電壓標準。
  12. Phenomenon whereby heat is liberated or absorbed at a junction when current passes from one metal to another

    當電流從一種金屬流入另一種金屬時，在結點處所發生的釋放熱或吸收熱的現象。
  13. We analyzed the mechanism of the reverse leakage current for ni - salicide shallow junction and studied the effect of the different process condition on the reverse leakage current

    分析了ni - salicide淺結反向漏電流產生的機理，研究了不同的工藝條件對淺結反向漏電流的影響。
  14. Analyzing the various problems of current steady - state operation life test standard, it is pointed out that, not measuring and controlling, transistor junction temperature in current transistor steady - state operation life test can lead to fatal inaccuracy of the test results

    摘要在分析了現行標準中晶體管穩態工作壽命試驗方法存在問題的基礎上，認為在現行的穩態工作壽命試驗中沒有對晶體管的結溫實施測量和控制，是導致試驗結果不準確的重要原因。
  15. The preamplifier will drive a low impedance load without alteration in the signal, in fact it can be used as a current source driving a 0 impedance mixer junction without any distortion

    這個前級放大器能夠驅動一個低阻抗的負載而不會引起信號的變化，實際上它可以用作一個驅動零阻抗混合節點，而又不產生任何失真的電流源。
  16. Based on the systematic study and analysis, alight spot scanner photo - current ( pc ) measurement technique was set up to measure the interface properties of silicon pn junction

    摘要通過系統的研究分析，建立了應用光探針的光電（ pc ）測量方法，應用鏡像法和點源產生近似原理建立了物理模型，並進行了系統的理論分析。
  17. Discussion is made on photocurrent output, injection current output and zero current output for photoreceiving pn junction by means of i - v equation of photoreceiving pn junction. further survey is carried out on physical elements of the injection photodetector followed by description of some experiment subjects

    本文推導金屬球的雷達散射截面，同時討論金屬球散射的三個區域，金屬球本身是一個良好的雷達目標，同時又是測量目標雷達截面的參考標準，因此還研究了金屬球的尺寸、導電性能和球殼的厚度，給出了測量結果
  18. In the second chapter, we discuss some properties of chaos in a rf - current biased josephson junction with linear and quadratic damping respectively

    第二章討論了線性阻尼和平方阻尼下的josephson結中的混沌問題。
  19. On the basis of the reptured tube at the final superheater of no. 4 boiler in yangluo power plant, the " tee junction effect " of terminal header on flux distribution in superheater was analysed, a mathematical model was founded to calculate the tube temperature and evaluate the lifespan of superheater and some measures to prevent eddy current in the area near the tee junction were put forward

    摘要分析了進口等徑三通對過熱器管流量分配的影響，建立了過熱器壁溫計算模型，並以華能陽邏電廠4號爐高溫過熱器爆管為例，對渦流效應的大小進行了分析，提出了消除渦流效應的措施。
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