junction field 中文意思是什麼

junction field 解釋
結場
  • junction : n. 1. 接合，連接，連絡。2. 接合點，交叉點，（河流的）匯合處，（鐵道的）聯軌點。3. 【電學】中繼線。4. 【物理學】接頭，結。
  • field : n 菲爾德〈姓氏〉。n 1 原野，曠野；（海、空、冰雪等的）茫茫一片。2 田地，牧場；割草場；〈pl 〉〈集...
  1. Jfet junction type field effect transistor

    結型場效應晶體管
  2. Semiconductor, diodes, bipolar junction transistors, field - effect transistors, transistor amplifiers, frequency response, operational amplifiers, differential and multistage amplifiers, integrated circuits

    半導體、二極體、雙極電晶體、場效電晶體、電晶體放大器、頻率響應、算放大器、差動及多極放大器、積體電路。
  3. Modern voltage references are constructed using the energy - band - gap voltage of integrated transistors, buried zener diodes, and junction field - effect transistors

    現代電壓基準建立於使用集成晶體管和帶狀能隙基準、掩埋齊納二極體和結場效應晶體管。
  4. They can be applied to electric power automatic control in many fields such as heat power plant, heat - electric generating plant, hydroelectric power plant, electric network, substation, pumping station, hydro - junction etc. and for electric power dispatching telecontrol system by telemetering and remote control, and field electric energy monitoring of the utilization and distribution equipment in numerous enterprises, can widely apply to electric power, water conservancy, metallurgy, petrochemical industry, chemical industry, railway, port, municipal administration, construction material, post and telecommunication, tobacco, papermaking, spaceflight base, civil aviation airport, hospital and school etc, many profession and field

    適用於火電熱電水電電網變電站所泵站水利樞紐等方面的電力自動控制和進行遙控遙測的電力調度遠動系統，以及眾多企事業單位用電配電設備的現場電量監控等。可廣泛應用於電力水利冶金石化化工鐵路港口市政建材郵電煙草造紙航天基地民航機場以及醫院學校等多種行業或領域。
  5. < uk > the far - field pattern in the plane of the junction consists in this case of only a single dominant lobe about 6 - 9 wine at the half - intensity point. < / uk >

    < uk >沿結平面方面的運場圖形就只是半一強度點約為6 - 9的唯一主瓣。 < / uk >
  6. In the design of the device, a kind of junction termination technology, polysilicon field plate was introduced at the edge of source and drain of the device. it reduced the electric field of pn junction and nn + at the surface to avoid breakdown at the two points

    在器件設計過程中，在源端和漏端都採用了多晶場板技術，減小了表面pn結和nn +處的峰值電場，避免了器件在這兩處過早擊穿。
  7. Then we studied the effect of junction uniformity on the aluminum - alloyed back surface field to solar cell performance. the formation theory of aluminum - alloyed back surface field, the effect parameters to the doping concentration and the junction depth were analyzed

    比較了兩種商業太陽電池的雜質濃度分佈及結深情況；敘述了鋁背場的作用及形成原理，對影響鋁背場表面濃度和結深的參數作了分析。
  8. A boson josephson junction ( bjj ) formed in a weakly coupled double - bec has been discussed intensively. based on mean - field theory ( mft ), which gives rise to the gross - pitaevskii equation, interesting phenomena such as macroscopic quantum self - trapping ( mqst ), and n - phase state, where the time - averaged quantum phase difference across the junction equals n have been predicted

    目前由弱耦合雙組分bec所構成的玻色約瑟夫森結（ bjj ）成為研究熱點，在平均場理論基礎上預言了許多有趣的現象如宏觀量子自捕獲（ mqst ） ，和-位相態（結間量子位相差的時間平均值為） 。
  9. Abstract : a vertical sandwich deep trench with a field limiting ring is proposed to improve the breakdown voltage of power devices and high voltage devices. simulation result shows that nearly 100 breakdown voltage of the plane junction can be realized

    文摘:提出一種二氧化硅/多晶硅/二氧化硅夾心深槽場限制環新結構來提高晶體管的擊穿電壓.模擬結果顯示，該結構可以使射頻功率雙極性晶體管的擊穿電壓幾乎100達到平行平面結的理想值
  10. Based on the fundamental study, a kind of rational cims architecture of the hydro - junction is given out, including its rational function structure, logical structure, and hierarchical control, decision - scheduling - field ' s control application system structure

    在此基礎上，提出了水利樞紐cims的合理體系結構，即給出了合理的功能結構、邏輯結構、遞階控制結構、決策-調度-現場控制應用系統結構。
  11. Graded doping is adopted in both sides of the junction ( double graded doping ). this results in a strong ( drift ) electric field throughout the whole active layer. this field will accumulate minority carriers effectively and the whole internal quantum efficiency is increased

    漂移場的形成是通過mbe技術，在結的兩側都採用梯度摻雜（即雙梯度摻雜） ，從而在整個有源層都建立起一個強的（漂移）電場，有效地利用載流子在電場作用下的漂移作用收集少數載流子，使得總內量子效率得以提高。
  12. In this paper, the foundamental principles of fd _ bpm ( finite - difference beam propagation method ) used to simulate and calculate the process of beam propagation is first introduced. then ， the theory of boundary condition is carefully presented. based on those theories mentioned above, a new kind of fd _ bpm arithmetic is brought forward. compared with the traditional arithmetic, this one has much more advantages. in virtue of the new arithmetic, author accomplished the whole simulating designs with two kinds of optical splitter ( stright y - junction optical splitter and sine - type optical splitter ), including propagation field simulating, vital parameter calculating, acquired some optimized waveguide parameters ， and finished the template by those results at last

    本文主要藉助這種改進的fd _ bpm演算法，對兩種結構的光分路器（直y型光分路器，上升正弦型光分路器）進行了器件設計的軟體模擬，包括對兩種結構光分路器傳輸場進行模擬，並對兩種結構光分路器的重要參數，如波導寬度，分叉角，縱橫比，損耗進行了模擬計算；得到了一些有價值的優化波導結構參數值，根據這些優化值設計製作了光刻模板。
  13. Junction field efefct

    面結型場效應
  14. Choose the good vacuum characteristic insulator, reduce the probable weakness ; 2. reduce the electrical field in the triple junction as possible 3. make the electrical field distributing along the surface more uniform

    總結提出了絕緣子設計的三點基本考慮： 1 、選擇真空性能好的絕緣子，減少可能存在的弱點； 2 、盡量降低三結合點電場強度； 3 、使電場沿絕緣子表面分佈盡量均勻。
  15. In order to comprehend operational principle and characteristics of organic static induction transistor, chapter three expatiates operational principle and characteristics of junction field effect transistor and static induction transistor

    為了理解有機靜電感應三極體的工作原理和特性，第三章闡述了結型場效應三極體和靜電感應三極體的工作原理和特性。
  16. The far-field pattern in the plane of the junction consists in this case of only a single dominant lobe about 6-9°wine at the half-intensity point.

    沿結平面方面的運場圖形就只是半一強度點約為6-9的唯一主瓣。
  17. Interaction of mesoscopic josephson junction with single - mode quantum light field

    介觀約瑟夫森結與單模量子光場的相互作用
  18. There are three power transistor which have been widely used in s band now : bipolar junction transistor ( bjt ), gaas metal - oxide semiconductor field effect transistor ( gaas mosfet ) and lateral diffuse metal - oxide semiconductor field effect transistor ( ldmos fet ). thanks to the advantages, such as, wide frequency, easy power supply, good stability, the ldmos fet has used in the motion telecommunication

    目前在s波段人們常用的放大器有雙極性晶體管（ bjt ） 、砷化鎵場效應晶體管（ gaasmosfet ） 、邊緣擴散場效應晶體管（ ldmosfet ）等，由於ldmosfet具有頻帶寬、供電方便、穩定可靠等優勢，目前已經廣泛用於移動通信3g的研究。
  19. It has been shown that the performance of sige heterojunction bipolar transistor ( sige hbt ) in high frequency is much better than that of si bipolar junction transistor ( si bjt ), and is better than that of algaas / gaas metal semiconductor field effect transistor ( algaas / gaas mesfet ) in some aspects

    Sige異質結雙極晶體管（ sigehbt ）的高頻性能大大優于si雙極晶體管（ sibjt ） ，並在某些方面優于algaas / gaasmesfet ，所以sigehbt具有廣闊的應用前景。
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