laser semiconductor 中文意思是什麼

laser semiconductor 解釋
激光半導體
  • laser : n 鐳射激光,受激發射光,激光;萊塞;激光器,光激射器 ( = light amplification by stimulated emis...
  • semiconductor : n. 【物理學】半導體。
  1. In the system, the collimation semiconductor laser - scanned beam scanning two perpendiculars direct of one plane of the measured workpiece at the same time is made. the beams with the dimension information of two perpendiculars direct are processed by the scanning receive system, the high - speed photoelectric transition and electronic data process. two measured results of the diametric directs and ellipse tolerance, etc, parameter, of the turning workpiece on the same plane are obtained by non - contact automatic measurement

    在單向激光掃描檢測技術的基礎之上,提出了一種雙向激光掃描檢測系統,其採用激光掃描檢測技術與特殊光學系統相結合,用準直半導體激光掃描光束對被測工件徑向某一截面的兩個相互垂直方向同時掃描,經掃描接收光學系統、高速光電變換、電子學系統和微機數據處理系統,對將攜帶有垂直方向被測量信息的光束進行處理,實現了回轉體工件同一截面兩個垂直方向的徑向尺寸和橢圓度等參數的非接觸自動測量,解決了同時非接觸測量回轉體零件同一截面兩個徑向尺寸的難題,它具有高速,高精度和非接觸自動測量等特點。
  2. The xecl excimer laser have broad applications in industry manufacture, scientific research, biomedical engineering, nuclear fusion, photoelectron, semiconductor etc. today, the excimer laser has been used in the serial of haloid excimer laser mainly, such as xecl, krf, xef, arf excimer laser

    準分子激光在工業製造、科學研究、生物醫學、核聚變、光電子、半導體等重要的課題研究領域上有廣闊的發展遠景。特別是準分子激光在光電材料、光電技術上有得天獨厚的優良性能。
  3. The high - power semiconductor quantum well ( qw ) laser is a kind of luminescence device with superior performance, it has longe - lived, low threshold current density, high efficiency, high luminosity and excellent monochromatic, coherence, directionality, etc. the high - power semiconductor laser is widely applied to the fields, such as military, industrial machining, communication, information processing, medical treatment, etc. the material ' s epitaxy is the foundation of the whole laser ' s fabricating, and it has important influence on the optics and electricity performance about the laser

    大功率半導體量子阱激光器是一種性能優越的發光器件,具有壽命長、閾值電流密度低、效率高、亮度高以及良好的單色性、相干性、方向性等特點,廣泛應用於軍事、工業加工、通信及信息處理、醫療保健等領域。材料的外延生長是整個激光器器件製作的基礎,對器件的光學和電學性能有著重要的影響,生長不出優質的材料體系,獲得高性能的器件就無從談起,因此,材料的外延生長便成為了整個半導體激光器製作過程之中的重中之重。
  4. After more than a decade of research, the semiconductor laser has emerged as an important component in optoelectronic systems.

    經過十多年的研究,半導體激光器已經發展成為光電系統的重要器件。
  5. Through studies of material characteristics suitable for making semiconductor laser heat sinks, we have manufactured panel heat sinks, large - channel heat sinks and micro - channel heat sinks

    通過對適于製作半導體激光器熱沉的材料特性進行研究,製作出平板熱沉、大通道熱沉及微通道熱沉。
  6. Semiconductor laser large - screen color tv ( slltv ) is a sort of new - style large - screen color tv. it has a wide foreground and a good developing potence

    半導體激光大屏幕彩色電視作為新型的大屏幕彩色電視系統,具有廣闊的發展前景和良好的發展潛力。
  7. For micro - cavity semiconductor laser, station model is proposed in this paper and its steady - state and instantaneous characteristics when the coupling efficiency of spontaneous emission into a lasing mode is equal to 1 are analysised. for current noise, sp noise, noise, p noise, as well as current modulation, sp modulation, modulation and p modulation, using small - signal approximation, we derive the laser ' s corresponding transfer functions. and we calculate their signal - to - noise ratio ( snr ) gain in various parameters through frequency domain analysis in the premiss of large input snr

    本文對于微腔半導體激光器,提出站模型,能夠較直觀簡潔地分析微腔半導體激光器的穩態和瞬態特性,利用此模型對具有重要實用價值的= 1的微腔半導體激光器進行了討論;對于電流i噪聲、自發發射壽命_ ( sp )噪聲、自發發射因子噪聲、光子壽命_ p噪聲,以及電流調制、 _ ( sp )調制、調制、 _ p調制,在小信號近似下,得到了相應的激光器的傳遞函數;在大信噪比的前提下,對激光器進行了頻域分析,分別計算了它們在不同參數下的信噪比增益,分析了其抗噪聲性能。
  8. A new laser source of optical communication, erbium - ytterbium codoped phosphate glass waveguide laser that was provided with more prominent performance than semiconductor distribution feedback ( dfb ) laser, has been investigated globally from 1990s. the laser can meet many rigorous demands of wdm systems. the 1. 54 m laser emitted by the laser accords with the interrelated standard of international telecommunications union ( itu ), therefore, a splendent foreground can be predicted about this kind of laser in future optical communication

    基於鉺、鐿摻雜磷酸鹽玻璃基片的光波導激光器是一種新型通信光源,具有傳統的分佈反饋半導體激光器所不能比擬的優點,能滿足波分復用/密集波分復用技術對光源提出的諸多高新要求,所發射的1 . 54 m激光符合國際電信聯盟規范,在未來光通信中有著廣闊的發展前景。
  9. Tunable - wavelength semiconductor laser using a fiber bragg grating

    基於光纖光柵的可調諧半導體激光器
  10. Yag laser processing equipment for semiconductor trimming

    激光加工機半導體整修用
  11. Yag laser processing equipment for semiconductor lithorgraphy yag

    雷射加工機
  12. Finally, we got the 940nm ingaas / algaas strained quantum well semiconductor laser

    最終獲得ingaas / algaas結構的940nm應變量子阱半導體激光器。
  13. In this thesis, the 940nm high power ingaas / algaas strained quantum well semiconductor laser has been studied

    論文對ingaas / algaas高功率940nm應變量子阱半導體激光器進行了研究。
  14. The light guiding unit on the surface is composed of sub - micron gratings whose transmission wavelengths are red, green and blue in order. the light source are red 、 green 、 blue led or semiconductor laser array. to enhance the light utilization, the surfaces of light guide plate except the incident and transmitted surfaces are coated with metallic film

    本文設計的亞微米光柵型導光板為矩形狀的,導光板上表面的導光單元是由三套出射光主波長分別是紅光632 . 8nm ,綠光521nm ,藍光441 . 6nm的亞微米光柵組成,光源採用的是紅、綠、藍三色發光二級管或者半導體激光器陣列,為了提高光能利用率,除入光面和出光面外,導光板其餘面都鍍上金屬膜。
  15. As the extensive application of the semiconductor laser diode ( ld ), it become more and more important to evaluate the quantity of laser beam. far - field divergence angle of laser beams is an important parameter about value of laser quality. not only the laser divergence peculiarity in the distance is reflected, but also quality of the correlative laser apparatus and the laser transmission is exactly known

    隨著半導體激光器日益廣泛的應用,對激光光束質量的評價越來越重要,而激光光束遠場發散角是評價激光質量的一個重要參數,它不但能反映遠距離傳輸時的激光發散特性,而且能準確評估出半導體激光器的品質及激光的傳輸質量。
  16. With the development of science and technology, more and more oxide crystals are synthesized by more and more advanced technique, the new oxide crystals are incessantly synthesized and the new characters of oxide crystals are incessantly founded. corundum dopped with impurity not only is cherished because of it ' s beautiful appearance, but also is used in the fields such as electrotechnics, mechanism, laser, the optic apparatus and the underlay of semiconductor. sapphire dopped with ti3 + is the best material of the tunable solid laser. zno crystal is material of the direct gap semiconductor ( the width of forbidden band : 3. 37ev ). the excited emission in zno crystal at room temperature has been found, so the ultraviolet luminescence in zno semiconductor can be acquired at room temperature

    含有少量雜質的剛玉晶體( - al _ 2o _ 3 )不僅由於其色澤艷麗成為人們珍愛的名貴寶石,而且由於它具有的優異性能,被廣泛應用於電工、機械、激光器,光學器件和半導體襯底材料。鈦藍寶石是目前最優異的固體寬帶調諧激光材料,用於製作飛秒脈沖可調諧激光器。氧化鋅晶體是直接帶隙寬禁帶半導體材料(禁帶寬度3 . 37ev ) ,現已發現具有室溫下受激發射特性,有可能實現室溫下半導體紫外發光。
  17. In the experiment, we use the he - ne laser and the semiconductor laser as the source, record the bessel beam patterns behind the axicon by using a digital camera and a microscope, measure the radius of the bessel beam central spot by film - scanning and measure the effect of both the radius of the aperture and the open angle of the axicon on the maximum non - diffraction distance. the experiments show that a specific propagating range has constant power and the beam has a bessel - like distribution in this range. the results agree with the beam corresponding to a diffraction free beam

    同時我們還採用膠片掃描的方法測量了無衍射光束的中心光斑尺寸,測量了不同光闌孔徑和不同稜角情況下的最大無衍射距離和傳播軸附近橫截面內微小光孔中的光強,實驗結果顯示當激光光束經過軸棱錐轉換後有一段距離功率變化很小,且分佈近似貝塞爾分佈,符合無衍射光束的特性;經過聚焦后,呈現三維分佈中空的光束bottlebeam ,實驗結果與理論分析基本吻合。
  18. In order to increase the output power, reliability and stabilization, microchannel heatsink which is one of active heatsinks is used to cool high power semiconductor diode laser arrays in the paper

    為了提高激光器的輸出功率、可靠性和穩定性,本論文選取有源熱沉? ?微通道熱沉來冷卻大功率半導體激光器列陣。
  19. Laser induced diffusion is a technology that dope the impurities into a certain region of semiconductor by a focused laser. it has the advantages of “ low temperature processing ” and ” direct writing ”, and it is promising to use this technology in the fabrication of monolithically optoelctronic integrated circuits ( oeics ) to solve the incompatibility problem between optoelctronic and electronic components

    激光誘導擴散是用聚焦的激光束局域加熱半導體基片,將雜質以擴散的方式摻入到特定區域並且達到一定要求的一種技術,具有「低溫處理」 、 「直接寫入」 、 「局域升溫」等獨特優點,可有效解決單片光電集成器件( oeics )中光、電兩部分的工藝兼容這一難題。
  20. Power coupling efficiency of semiconductor laser

    半導體激光器光束準直系統的功率耦合效率
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