magnetron sputtering 中文意思是什麼

magnetron sputtering 解釋
磁控管濺射
  • magnetron : n. 【無線電】磁控（電子）管。 rising-sun magnetron旭日型磁控管。
  • sputtering : 飛濺
  1. Excellent results have been obtained by using dc magnetron sputtering technology. a solar absorptance of 0. 94 - 0. 96 with an emittance of 0. 04 - 0. 06 at 100 has been achieved

    磁控濺射技術的準確結果顯示這種真空管在100時能夠達到吸收率： 0 . 94 - 0 . 96
  2. Anticoagulant property of tio2 thin films prepared by magnetron sputtering

    2薄膜的抗凝血性能
  3. Copper has been deposited on surface of the al mmcs as interlayer by magnetron sputtering, tlp bonding of al mmcs with these interlays, the joints shear strength of tlp bonding using deposited film was as much as the joint shear strength of tlp bonding using cu foil. removing the oxidation on the surface before deposition, copper was coated by magnetron sputtering as tlp bonding interlayer

    待連接表面通過磁控濺射法沉積銅膜作為中間層進行瞬間液相連接，得到的接頭強度與銅箔中間層進行瞬間液相連接得到的接頭強度相當，而使用磁控濺射法去除待連接表面氧化膜后沉積銅膜作為中間層進行瞬間液相連接的接頭強度提高7 . 6左右。
  4. Using jgp560c magnetron sputtering equipment, cu / ag film are deposited on cd1 - xznxte substrate by dc magnetron sputtering in order to get the influences of the main experiments parameters such as sputtering power, gas flow, vacuum air pressure, magnetoelectricity power and substrate temperature on deposition rate of film, discovered that dc sputtering power is the most key factor influencing the deposition rate

    在jgp560c型超高真空多功能磁控濺射鍍膜機上，採用直流磁控濺射法在cdznte晶體上制備出cu ag合金薄膜，揭示了氣體流量、直流濺射功率、勵磁電源功率、工作氣壓和襯底溫度等工藝參數對沉積速率的影響規律。結果表明濺射功率對沉積速率的影響最大，隨濺射功率的增大沉積速率快速增大。
  5. Research of unbalanced magnetron sputtering system

    非平衡磁控濺射系統的研究
  6. Magnetron sputtering target source and sputtering procedure

    磁控濺射靶源設計及濺射工藝研究
  7. Compound medium wave - guide film on columned li - ferrites was made by magnetron sputtering system

    用磁控濺射的方法在圓柱鋰鐵氧體表面鍍覆了復合介質波導薄膜。
  8. Firstly, the tio2 thin films are deposited by dc reactive magnetron sputtering apparatus, and characterlized by n & k analyzer1200, x - ray diffraction spectroscopy ( xrd ), scanning electronic microscopy ( sem ), alpha - step500. and it was analyzed that the effect on performance and structure of films with the change of argon flow, total gas pressure, the substrate - to - target distance and temperature

    第一、應用穩定的直流磁控濺射設備制備tio2減反射薄膜並通過n & kanalyzer1200薄膜光學分析儀、 x射線衍射分析（ xrd ） 、掃描電子顯微鏡（ sem ） 、 alpha - step500型臺階儀等儀器對薄膜進行表徵，分析氧分壓、總氣壓、工作溫度、靶基距等制備工藝參數對薄膜性能結構的影響。
  9. High quality nickel films have been successfully plated on cenosphere particles by dc magnetron sputtering at mom temperature

    摘要本文論述了在空心微珠表面磁控濺射鍍金屬薄膜的方法。
  10. In this study we focused on the pinning structure, and prepared [ pt / mn ] n multilayer by dc magnetron sputtering system instead of using co - sputtering, by which we wish to find a way to reduce the critical annealing temperature and shorten the annealing time

    在我們的課題研究中，我們著重對釘扎層進行了研究，工藝上採用了pt / mn多層膜而不是傳統的共濺射的方法。我們希望通過這種方式能夠發現一條降低臨界退火溫度的途徑，並且能夠縮短退火時間。
  11. In this paper, we reported the structural and luminescent properties of si - based oxide films containing semiconductor si, ge or metal al powders prepared by a dual - ion - beam co - sputtering method ( si - sio2 films and al - si - sio2 films ) or rf magnetron sputtering technique ( ge - sio2 films ), and analyze the pl and el mechanism. 1. the composite films of si - sio2 films were prepared by dual ion beam co - sputtering method from a composite target in argon atmosphere

    我們利用雙離子束共濺射和射頻磁控共濺射技術制備了一系列含有半導體si 、 ge顆粒及金屬顆粒al的薄膜，即si - sio _ 2薄膜、 ge - sio _ 2薄膜和al - si - sio _ 2薄膜，分別對它們的結構、光吸收以及發光性質進行了研究。
  12. Research on drilling tests of magnetron sputtering craltin coated high - speed steel twist drills

    塗層高速鋼麻花鉆的鉆削試驗研究
  13. Dielectric loss of amorphous alumina films grown by reactive rf magnetron sputtering

    磁控濺射法制備氧化鋁薄膜及其介電損耗
  14. Magnetron sputtering is common method for preparating metal film resistor. by this method, the target is very important for the performance of the resistor

    在金屬膜電阻器的生產過程中，靶材是非常關鍵的，它制約著金屬膜電阻器的精度、可靠性、電阻溫度系數等性能。
  15. The deposition of a titanium - containing diamond like carbon ( ti - dlc ) film was performed with the unbalanced magnetron sputtering process. chromium molybdenum steel aisi 4118 in a quenched and tempered condition was used as substrate

    本文採用非平衡磁控濺射方法在調質處理后的aisi4118鉻鉬鋼表面沉積了含ti類金剛石（ ti - dlc ）膜。
  16. The main conclusions and original results are summarized as follows. the manganin ultra - high pressure sensors for gas gun were made by two - step thin film techniques, namely, manganin thin films were first deposited by magnetron sputtering on fused silica substrates, and then covered by a layer of sio2 thin films by electron beam evaporation. consequently, the manganin sensing elements were " cleanly " encapsulated in inorganic solid matrix and the high - pressure shunt effect was eliminated radically

    上述技術的主要優點在於可以採用高壓絕緣性能更好的無機物作為絕緣封裝材料，如本研究中所採用的sio2 ，而代替在箔式錳銅計中所使用的ptfe ；並可實現敏感元件「清潔」地無機固態封裝，即將整個敏感元件是包封在無機物中，而不與高壓力下絕緣性能相對較差的有機物，如粘接劑、樹脂等直接接觸，從而在根本上消除了高壓旁路效應。
  17. The surface morphologies of thin films were observed by using scan electron microscope ( sem ) and atomic force microscope ( afm ). based on grazing incidence x - ray diffraction ( gixrd ) equipment, we find that residual stress exist in magnetron sputtering plct film, in addition, the ferroelectric properties of plct thin films were measured by radiant premier lc type multifunctional ferroelectric properties test system

    利用廣角x射線衍射技術對不同濺射工藝下plct薄膜的相結構進行了研究;採用掃描電子顯微鏡（ sem ）和原子力顯微鏡（ afm ）分別觀察了薄膜的表面形貌;利用掠入射x射線衍射（ gixrd ）測量了薄膜的殘余應力。
  18. In this paper, fluorocarbon films are deposited on polyetylene terephalate ( pet ) substrate by radio frequency magnetron sputtering polytetrefluoroethylene ( ptfe ) targets to examine the effect of discharge condition on the properties and mechanism of deposited films. the effect of the power, pressure and treating time on morphology is observed by means of scanning electron microscopy ( sem ) and atom force microscopy ( afm ). it is found that the fluorocarbon film particles distribute more uniform and join tightly with increasing power, the surfaces of films become closer and denser as pressure increases

    利用掃描電鏡（ sem ）和原子力顯微鏡（ afm ）研究了成膜機理以及cf膜的表面形貌，觀察了不同功率、壓力和時間下對氟碳膜表面形貌的影響，系統研究了氟碳膜表面結構隨功率和壓力的變化規律，發現功率提高使得氟碳膜顆粒分佈均勻，結合更加緊密，而提高壓力，氟碳膜的顆粒更加密集，並且濺射條件不同，粒子的形態、粒子間構成的介觀結構也不相同。
  19. Uniform and compact plzt and sno _ 2 ceramic targets, which diameter were 212mm and 221mm, respectively, had been successfully fabricated. ( 2 ) a rotating magnetic field rf magnetron sputtering system had been designed and set up, which showed high utilization efficiency of target, high films uniformity, and high deposition rate, etc. ( 3 ) the plzt and sno _ 2 thin films were investigated by afm, xrd, sem, and spectral photometer. the optimized processing parameters of preparing these films had been found

    並以此為基礎分別制備了緻密、均勻、平整、直徑為212mm的plzt和221mm的sno _ 2陶瓷濺射靶材; （ 2 ）為克服現有磁控濺射設備的不足，提出了一種新的磁控濺射方案，採用該方案的設備具有:靶材利用率高、鍍膜均勻、成膜速度快等特點; （ 3 ）運用afm 、 xrd 、 sem以及雙光路分光光度計等分析手段對plzt和sno _ 2薄膜的微結構和性能進行研究，找到了制備plzt電光薄膜和sno2透明電極材料的最佳工藝條件。
  20. The study on low temperature pvd deposited sic film was carried out - m - employing bias assisted magnetron sputtering. furthermore, pvd deposited sic film mainly containing cubic phase was achieved at room temperature for. the first time

    採用偏壓輔助rf濺射法，對低溫物理氣相沉積sic薄膜進行了研究，並首次在室溫下制備出含有? sic構相併以其為主的sic薄膜。
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