mask lithography 中文意思是什麼

mask lithography 解釋
掩模光刻
  • mask : n 1 假面具，偽裝，掩蔽物；面罩；防毒面具（＝ gas mask）；【物理學】掩模；（劈劍，棒球等用）護面；...
  • lithography : n. 石印〈平版印刷〉術；平版印刷品。
  1. Developing the lithography process models to properly characterize critical dimension ( cd ) variations caused by proximity effects and distortions introduced by patterning tool, reticule, resist exposure, development and etching, they are beneficial to develop a yield - driven layout design tool, the engineers could use it to automate the tasks of advanced mask design, verification and inspection in deep sub - micron semiconductor manufacturing

    建立準確描述由於掩模製造工藝、光刻膠曝光、顯影、蝕刻所引起的光學鄰近效應和畸變所導致的關鍵尺寸變化的光刻工藝模型，有助於開發由成品率驅動的版圖設計工具，自動地實現深亞微米下半導體製造中先進的掩模設計、驗證和檢查等任務。
  2. The processes include the deposition of the waveguide film, the design and fabrication of the mask pattern, the lithography, the metal coating with a magnetic sputtering, the lift - off process for the metal mask, the dry deep etching by icp, the slicing of the wafer, the polishing of the cutting edge, the fiber - to - waveguide alignment and at last, the performance testing. some edg chip samples are fabricated

    對設計好的集成波導器件，本論文設計並試驗了器件的製作的全部工藝，包括波導薄膜的沉積，掩模的設計製作，光刻，濺射金屬薄膜，剝離法製作金屬掩模，干法深刻蝕，矽片切割，端面磨拋，波導對準和性能測試。
  3. Kohler illumination was used in proximity lithography, and a fly ' s eye lens was adopted to form multi - point source in order to uniform the light intensity on the mask plane

    摘要接近式光刻中一般採用柯勒照明系統，並採用蠅眼透鏡形成多點光源均勻掩模面的光場分佈。
  4. The principle, theory, realizing methods for holographic lithography as well as the pattern transfer mechanism among the traditional photomask - hologram mask - resist have been deeply investigated. an experimental system with total inner reflection wavefront conjugation holographic lithography using right angle prism and refractive index matching liquid is designed and built, and the experimental research is carried out

    對全息光刻的原理、理論、實現方法及傳統光掩模?全息掩模?抗蝕劑圖形傳遞機理進行了深入的研究，設計和建立了採用直角棱鏡和折射率匹配液的全內反射波前共軛全息光刻實驗系統，進行了實驗研究。
  5. Lithography, as used in the manufacture of ics, is the process of transferring geometic shapes on a mask to the surface of a silicon wafer.

    光刻技術應用到集成電路製造中，就是將掩模版的幾何圖形轉移到矽片表面的工藝過程。
  6. In chapter five, the structure and principle of hadamard transform imaging spectrometer are deseribed. method of manufacturing marks, the key element of the spectrometer by applying computer technology lithography is given, practical masks are obtained by this method, errors of the mask that affected the measurement result are modulaton, finally discusses the limitation of hadamard transform imaging spectrometer ' s application

    阿達碼變換成像光譜儀的關鍵元件是編碼模板，給出了應用計算機技術、光刻技術等先進技術製作編碼模板的方法，並應用該方法製作了31x33碼元二維移動方式下的空間編碼模板， 31x33碼元一維移動方式下的空間編碼模板，以及63碼元的光譜編碼模板等。
  7. Extreme ultraviolet lithography is being developed as one of the most important candidates to fabricate a sub - o. lum - pattern. in recent years, several key technologies have been developed rapidly such as laser producing plasma source, extreme ultraviolet multilayer, optical fabrication and metrology, projection - camara alignment, low - defect mask and control technology of stage

    極紫外投影光刻（ extremeultravioletlithography簡稱euvl ）最有可能成為下一世紀生產線寬小於0 . 1 m集成電路的技術，近年來在激光等離子體光源、極紫外多層膜、光學加工和檢測、光學精密裝調、低缺陷掩模、光刻膠技術以及高穩定工作臺系統控制等關鍵技術方面得到了飛速發展。
  8. Lithograghy and its relative techniques play a very important role in mems fabrication processes, spin coating and baking are an indispensable working procedure before and after the lithography process. oven and hotplate are often employed in order to enhance adhesion between the film and the substrate, stabilize sensitivity of film and improve the abrasion resistance when the film touches a mask in contact exposure

    均膠和烘乾是光刻工藝中不可缺少的一道工序，為增加膠層與矽片表面粘附能力，提高在接觸式曝光中膠層與掩模版接觸時的耐磨性能及穩定膠層的感光靈敏度，通常採用烘箱或熱板等加熱設備對光刻膠進行乾燥。
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