physical vapor deposition 中文意思是什麼

physical vapor deposition 解釋
pvd
  • physical : adj 1 物質的，有形的，形而下的 （opp psychical spiritual mental moral）; 確鑿的；外界的。2 身體的...
  • vapor : n. 〈美國〉＝ vapour.
  • deposition : n. 1. 免職，罷免；廢位。2. 淤積[沉積]（物，作用）。3. 耶穌從十字架上放下（的畫、雕刻）。4. 寄存，委託；委託物。5. 【法律】口供，證言；口供書。
  1. Abstract : the deposited film with magnesium / polytetrafluoroethylene ( mg / ptfe ) material is produced by physical vapor deposition. the infrared radiation property of mg / ptfe material is tested by using the infrared radiation meter. the results demonstrated that this material has stronger infrared radiation in 1 3 m wave length. it shows that produced infrared radiation pyrotechnic material by physical vapor deposition is feasible

    文摘:採用物理汽相沉積法設計製作了鎂/聚四氟乙烯沉積膜材料，並用紅外輻射計對其紅外輻射性能進行了測試，測得該材料在1 3 m波段有較強的紅外輻射，說明這種方法製作紅外輻射煙火材料是可行的。
  2. The refractory metals and refractory metal silicides that are used to augment or replace the polysilicon are generally deposited by physical vapor deposition processes.

    用於增強和取代多晶硅的難熔金屬和難熔金屬硅化物通常是用物理蒸發沉積工藝沉積的。
  3. By the pecvd ( plasma enhanced chemical vapor deposition ) system and the reactants of silane and ammonia, silicon nitride thin film with excellent anti - reflective and passivation effects was prepared. the relatively optimum parameters for depositing sinx thin film and the basic physical and chemical properties of sinx were investigated. the effects of substrate temperature, the flow ratio of silane over ammonia and the rf power on the refractivity and deposition rate were researched

    實驗表明，氮化硅薄膜的沉積速率隨硅烷氨氣流量比增大而增大，隨溫度升高而略有降低，隨淀積功率增大而明顯增加；在襯底溫度300 ，射頻功率20w和硅烷氨氣流量比為1 ： 3的條件下氮化硅薄膜的沉積速率大約為8 . 6納米分。
  4. The applications field of fgm include aerospace, electron, chemistry, biology and medicine fields ; the composition change also from metal / ceramic to metal / metal, metal / alloy, non - metal / non - metal and non - metal / ceramic. moreover, various methods including powder metallurgy, self - propagating high - temperature synthesis ( shs ), chemical and physical vapor deposition ( cvd and pvd ), electrodeposition, laser cladding method, plasma sputtering and sol - gel method have been studed. metal organic chemical vapor deposition ( mocvd ), using chemical vapor deposition of metal organic compounds, is an effective method for acquiring special function materials and membrane

    功能梯度材料是21世紀最有發展前景的新型材料之一，其用途已由原來的宇航工業，擴大到核能源、電子、化學、生物醫學等領域；其組成也由金屬?陶瓷發展成為金屬?金屬、金屬?合金、非金屬?非金屬、非金屬?陶瓷等多種組合；其制備方法主要包括粉末冶金法，自蔓延高溫合成法（ shs ） 、氣相沉積法（ cvd和pvd ） 、電沉積法，激光熔覆法，溶膠?凝膠法（ sol - gel ）等。
  5. Physical vapor deposition

    物理蒸汽沉澱法
  6. Rf magnetron sputtering that has been broadly used to fabricate a variety of thin films is a kind of physical vapor deposition ( pvd ), which consists of two main microscopic processes, one is the generation and transportation of the vapor phase particles to form the thin film, the other is the diffusion and aggregation of the film atoms on substrate, which leads to the formation of the film

    射頻磁控濺射是一種物理氣相沉積技術，已被廣泛地用於各種薄膜的制備。它主要包括成膜氣相粒子（原子或分子）的產生和輸運以及輸運到襯底的成膜粒子在襯底上的擴散、聚集、生長成膜兩大過程。
  7. Coating cracks and defects are main reasons for the limited oxidation resistance of sic - c / sic. in this thesis, surface modification of sic coating was carried out with physical vapor deposition ( pvd ) and ion implantation & deposition, using al, b and si. effects of the modified coatings on the oxidation resistance of sic - c / sic were studied with sem, xrd and aes and so on

    本文採用了物理氣相沉積方法和離子注入沉積方法，以al 、 b 、 si為改性元素，對sic塗層表面進行改性，封填裂紋和缺陷；結合掃描電鏡（ sem ） 、 x射線衍射（ xrd ）和俄歇能譜（ aes ）分析，研究了改性層對sic - c sic復合材料抗氧化性能的影響。
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