post heating 中文意思是什麼

post heating 解釋
後期加熱
  • post : n 1 (被指定的)地位,崗位;職位,職守。2 【軍事】哨所,站;哨兵警戒區;〈轉義〉哨兵,衛兵。3 基...
  • heating : adj. 1. 加熱的;供熱的。2. 刺激的。n. 1. 加熱;供暖;(建築物的)暖氣裝置。2. 白熾,灼熱。
  1. After dealing with post heating at the same deposit temperature, the average of transmission and reflectance of the films are smaller than unannealed ones but eopt is enlarged

    相同沉積溫度下制備的薄膜樣品經過不同退火溫度和退火時間處理后,薄膜的平均透過率和平均反射率都比退火前下降,光學能隙變大。
  2. Then, by annealing, the si / sic / sich nano - composite films are prepared. the influence of the post - heating on the microstructure of the films has systematically been studied by the means of the measurements of hrem. the nano - crystals are found embedded in the amorphous matrix in the unannealed sample and the crystallinity is not high

    以硅烷和乙烯為原料氣採用常壓化學氣相沉積制備得到si / sic復合薄膜,並使用退火處理方法對該薄膜進行后處理,最終得到si / sic / slo :納米鑲嵌復合薄膜。
  3. Abstract : during the heating of scrap with carbon or hydrocarbon contented substances in some process, it will bring problems like explosion of carbon monoxide, fume and smell from oil volatilization, etc. , if incomplete combustion occurs. through laboratory experiments, the time related variation of gas contents and post combustion ratio of fume during the heating of oil - bearing scrap are studied. the results show that the restrictive chain of reaction procedure is the thermolysis of oil ; that temperature and ( co ) / ( co2 ) ratio influence transformation ratio and post - combustion ratio under lower temperature ; that 900 is the temperature above which the complete reaction can be ensured at all ( co ) / ( co2 ) ratios

    文摘:在某些廢鋼熔煉過程中,當爐料中含碳及碳氫物質且燃燒不充分時,會帶來煙氣中一氧化碳的燃爆、油污揮發時造成的煙霧、臭味等問題.通過實驗室裝置研究含油廢鋼在加熱過程中煙氣成分隨時間的改變以及二次燃燒率的變化,試驗結果表明,反應過程的限制性環節是油分的熱分解;在較低的溫度下( co ) / ( co2 )比例影響轉化率和二次燃燒率;而在任意比例下保證充分反應的溫度為900以上
  4. The photoluminescence of the thin films without post heating shows that the increasing of the deposit temperature decreases the pl intensity. only the sample deposited at 450 has one evident luminescence band found nearby 523. 2nm

    對復合鑲嵌薄膜光致發光特性的研究發現,在450沉積未經過退火處理的薄膜樣品中觀察到室溫光致發光現象,在523 . 2nm附近有一強的發光譜帶。
  5. The characteristics of ito films prior to and post the pi and hot - press heating cure in the manufacturing processes of lcd have been researched to provide guidance for selecting lcd flat panel and enacting of pi and hot - press heating cure conditions in the processes design

    研究了ito導電膜在lcd工藝流程中pi高溫固化熱處理前後和熱壓固化熱處理前後的電性能特性,為工藝設計中lcd基材的選配及pi 、熱壓固化條件的設定提供指導。
  6. The photoluminescence of the thin films without post heating is weak. only one luminescence band is found nearby 473nm. two luminescence bands are found after post heating, nearby 493nm and 368nm respectively. the intensity of the luminescence bands increase little by little when the temperature and the time of post heating continues to increase

    而退火處理過后,薄膜出現兩種光致發光現象,即藍色發光和紫外發光,其峰值分別在493nm和368nm附近,而且隨著退火溫度的升高和退火時間的延長,發光譜帶的強度逐漸增大,峰形的位置也有不明顯的藍移。
  7. The gradient films and the modification of the microstructure can be realized by the post - heating. then the novel antireflecting energy saving coating glass is achieved. it is also found when the temperature and time of the post - heating increases, the average reflectivity will decrease and the average transmission will increase

    實驗結果表明,隨著退火處理溫度的升高和退火時間的延長,鍍膜玻璃的平均反射比呈線性下降的趨勢,而其平均透射比則呈現增大的趨勢,不過前者的下降趨勢更加劇烈和明顯。
  8. Ptmn has practically been used as anti - ferromagnetic layer to pin ferromagnetic layers because of its large exchange bias, high blocking temperature and excellent thermal stability. on the other hand, ptmn films deposited by magnetron sputtering without substrate heating require a relatively high temperature post - deposition annealing in magnetic field to induce a unidirectional exchange field hes

    由於ptmn反鐵磁材料具有大的交換偏置,比較高的blocking溫度和較好的熱穩定性,在自旋閥結構中ptmn已經在實際應用上用來釘扎鐵磁層。
  9. The latter structure is composed of polycrystalline graphite in fact. a large amount of sic > 2 single crystals with the size of lonm appears in the film when the time of the post - heating is increased to five hours

    當退火時間延長到5個小時,薄膜的結晶度和600退火一個小時的薄膜相類似,不過,薄膜中大量存在的是10nm左右的sio2晶粒。
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