quartz substrate 中文意思是什麼
quartz substrate
解釋
石英襯底-
The love wave device with the substrate of st - cut quartz and the guiding layer of si02 was used as the saw biosensor. dna sensor employing synthetic seb dna probe as a molecular recognizing component was utilized to detect seb by measuring seb dna in samples
該傳感器採用以st一切割的石英晶片為基體，以510 :為波傳導層的樂甫波（ lovewaves ）裝置，利用具有分子識別功能的dna合成探針來實現對樣品中sebdna的檢測。 -
The source is which is placed along with the polished substrate in an evacuated, sealed quartz ampoule.
擴散源與拋光襯底一起置放在抽真空密封的石英管內。 -
< uk > the source is which is placed along with the polished substrate in an evacuated, sealed quartz ampoule. < / uk >
< uk >擴散源與拋光襯底一起置放在抽真空密封的石英管內。 < / uk > -
Znf16pc molecules grow on quartz substrate in a stransky - krastanov model ; a fundamental layer is laid by strong interactions between quartz and f - atoms on znf16pc, on which an amorphous transition layer develops, finally an well ordered film is obtained, " card - packing ", " amorphous accumulation " and " brick - stacking " are adopted hi three different layers
Znf _ （ 16 ） pc分子在石英襯底上的生長基本符合stransky - krastanov模型：通過f -原子與石英襯底的強相互作用形成奠基層，發展成無定型的過渡層，最後形成有序的結晶層。在這三個區域內分子分別採取「 card - packing 」 、 「 amorphousaccumulation 」和「 brick - stacking 」排列方式。 -
In the " card - packing ", a znf16pc molecule takes an angle of 52 respect to the substrate. while in the " brick - stacking ", the molecules arrange in a square lattice with lattice constant as 14. 94a and 14. 28a under room temperature and 300 respectively. from room temperature to about 150, f - ptcdi molecules follow the vollmer - weber rule when grown on quartz substrate, as revealed by afm images
在「 card - packing 」模式中，分子平面與石英襯底平面成52左右的二面角；在「 brick - stacking 」模式中，較低溫度下，分子以四方點陣平行排列，點陣常數為14 . 94 ；在300的襯底溫度下發生構象調整，點陣常數減小為14 . 28 ，分子採取更高密度的堆積方式。 -
This work using negative bias to improve the nucleus density, and quartz glass was used as a kind of depositional substrate and diamond was deposited upon it in an mpcvd equipment. the diamond coating was characterized by xrd sem rama xps. the experimental results show that the mostly component of the film is diamond, and the results show that the sic is exist. it show that the diamond film not grow directly on the quartz glass, there exist the sic transition layer
在mpcvd制備得到了金剛石薄膜之後，分別用x衍射（ xrd ） 、掃描電鏡（ sem ） 、拉曼譜（ raman ）和光電子能譜（ xps ）等測試手段對金剛石薄膜進行了表徵，結果表明了生長出來的薄膜的主要成分是金剛石，同時發現了sic的存在，這表明了用mpcvd在石英玻璃上生長金剛石薄膜時，不是直接生長在sio _ 2上，而是有一個過渡層sic ，然後在過渡層上再生長一層金剛石薄膜。 -
Two sources of si were identified. one was from the sif62 - ions, which were formed by a reaction between the treatment solution and quartz substrate. the other was attributed to the diffusion of si from the surface of quartz substrate into tio2 thin film at 700 c or higher calcination temperatures
薄膜中的si元素來源於二部分，其中一部分來源於反應液與石英玻璃基片反應所生成的[ sif _ 6 ] ~ （ 2 - ）離子，另一部分則來自於薄膜在高溫熱處理（ 700或高於700 ）過程中從石英玻璃表面擴散到薄膜中的si元素。 -
Effects of methane concentration, deposition pressure, gas flow rate and substrate temperature on diamond coating on quartz glass by mpcvd were studied systemically. the best parameters were established by experiments
系統地討論了在石英玻璃上mpcvd沉積金剛石薄膜的實驗過程中，甲烷濃度、沉積氣壓、氣體流量、基體溫度等不同實驗工藝參數對金剛石薄膜質量的影響。
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