reactive sputtering 中文意思是什麼

reactive sputtering 解釋
反應濺射法
  • reactive : adj. 1. 反動的，倒退的，復古的。2. 反應的；反作用的；反沖的；【電學】電抗的；【化學】反應性的，活性的。reactivity n. adv. -ly ,-ness n.
  • sputtering : 飛濺
  1. Some gas - sensitive test to deoxidizing gas have carried out based on tio _ 2 films by sputtering and doped some impurity. the experimental results showed that tio _ 2 films have different electron injecting principle and reactive mechanism, the behaviors of gas - sensor for hydrogen and ethanol manifest dissimilitude. this is due to that the oxygen vacancies were compensated by the impurity

    用濺射制備的薄膜摻入部分雜質對還原性氣體進行氣敏測試，發現tio _ 2薄膜對酒精氣體和氫氣有不同的反應機制和電子注入機理，氣敏特性也表現出不同，而雜質的引入反而降低了tio _ 2薄膜的敏感性，可能是由於雜質對氧空位的補償所引起。
  2. Firstly, the tio2 thin films are deposited by dc reactive magnetron sputtering apparatus, and characterlized by n & k analyzer1200, x - ray diffraction spectroscopy ( xrd ), scanning electronic microscopy ( sem ), alpha - step500. and it was analyzed that the effect on performance and structure of films with the change of argon flow, total gas pressure, the substrate - to - target distance and temperature

    第一、應用穩定的直流磁控濺射設備制備tio2減反射薄膜並通過n & kanalyzer1200薄膜光學分析儀、 x射線衍射分析（ xrd ） 、掃描電子顯微鏡（ sem ） 、 alpha - step500型臺階儀等儀器對薄膜進行表徵，分析氧分壓、總氣壓、工作溫度、靶基距等制備工藝參數對薄膜性能結構的影響。
  3. Zno thin films were deposited on silicon ( si ) and glass substrate by reactive radio frequency sputtering ( rf ) technique with zinc target in the mixed gas of ar ando2, and used zno buffer improving the quality of zno thin film. the effects of parameters on the thickness, composition, texture, morphology, optical properties and electrical properties of zno thin films had been systematically investigated by means of xrd, xps, sem, afm, pl and hall test system

    採用x射線衍射（ xrd ） 、 x射線光電子能譜（ xps ） 、掃描電子顯微鏡（ sem ） 、原子力顯微鏡（ afm ） ，光致發光譜（ pl ）和霍爾效應測試技術系統研究了濺射工藝和退火工藝對zno薄膜的厚度、成分、織構、表面形貌、光學性能和電學性能的影響規律。
  4. Dielectric loss of amorphous alumina films grown by reactive rf magnetron sputtering

    磁控濺射法制備氧化鋁薄膜及其介電損耗
  5. We researched fabrication at different asputtering and annealing atmosphere, the different process conduced different electrical properties. we can conclude a higher annealing temperature and higher proportion of o2 during reactive sputtering favors the improvement of electrical performances of hfo2 dielectrics ; 4. the analysis of i - v curves of these devices displays different leakage current mechanism under different area of applied bias - voltage ; as to silc. there are different leakage current mechanism at influence of sil. c ; 5

    研究表明，在優化工藝條件下制備的hfo _ 2介質層中，襯底注入條件下由於其較低的體和界面缺陷密度，漏電流的輸運機制主要以schottky發射為主; silc效應導致hfoz / si界面缺陷態的增加，從而使得襯底注入條件下，柵泄漏電流機制不僅有schottky發射還有f一p發射機制起主要作用; 5 ）初步研究了氮化的hfo : （ hroxny ）柵介質的電學特徵。
  6. Water steam was used as oxidant, and the optimum water steam partial pressure is between 1 10 - 4 and 5. 5 10 - 4 pa. under the optimum growth parameters, a ceo _ 2 seed layer with highly textured degree was successfully prepared. beside the one step process was experimented in this dissertation, the two step process was proposed and studied to further improve the quality of ceo _ 2 seed layer. in the two step process, about 15 nm thick of ce metal layer was deposited on metallic substrate at the first step, then water steam was introduced in the chamber, and the ceo _ 2 thin films were subsequently deposited with reactive sputtering in the

    總結出沉積ceo _ 2薄膜的優化工藝條件，當沉積溫度為720 - 850 、水蒸汽分壓介於1 10 - 4 - 5 . 5 10 - 4pa之間、退火時間40min時，獲得了織構程度良好的ceo _ 2種子層薄膜; 3 .由於一步法制備ceo _ 2種子層中水分壓范圍狹窄，工藝條件難以控制，並且退火延長了薄膜的制備時間，因此，本論文又採用了兩步生長法沉積ceo _ 2種子層，即:先在ni - w基帶上沉積一層約15nm的金屬ce薄膜，再通入氧化氣氛（水蒸汽） ，繼續進行薄膜沉積。
  7. Dlc and a - sic : h films were prepared by the rf glow discharge and the reactive sputtering method respectively. there were two reasons that we chose y rays, ultraviolet ( uv ) photons, and neutrons as radiation sources. one is that y rays, uv photons and neutrons irradiation are serious at outer space and / or nucleus irradiation enviromentthe other is that the study on y rays irradiation on the films is a new and an important directioaotherwisejirnited reports have been made of the investigation on the uv photonsjieutrons irradiation influences on these films

    本文分別採用射頻（ 13 . 56mhz ）等離子體cvd及射頻反應濺射方法制得了dlc及a - sic ： h薄膜。文中主要選擇y射線、紫外光及中子作為輻照源有兩方面的原因：一方面，在外層空間， y射線及紫外光輻射十分嚴重，而在核輻射環境下y射線及中子輻射也不可忽視；另一方面， y射線輻照這兩種薄膜完全是一項開創性的工作，同時國內外對紫外光子、中子與這兩種薄膜作用的研究也很少。
  8. In order to find a new way to prepare antibacterial fibers, photocatalytic oxidation of titanium dioxide ( tio2 ) has been used to modify the surface property of polymers in our experiment. tio2 films are deposited on polyethylene terephthalate ( pet ) substrates by means of rf magnetron sputtering using pure ti ( 99. 99 % ) as the target and ar mixed with o2 as reactive gas

    本文利用磁控反應濺射技術，以高純度鈦（ ti ）為靶材，氧氣為活性氣體，在pet基底上反應濺射沉積tio _ 2 ，將納米tio _ 2的光催化氧化特性應用於高聚物表面改性，為進一步開發抗菌織物打下基礎。首次在高分子pet基底上濺射沉積了氧化鈦薄膜。
  9. ( 4 ) the study of the optical band gap of cnx film by uv - vis spectrophotometer. ( 5 ) by using the microhardness tester, we study the hardness of cnx film on the ceremic substrate by dc magnetron reactive sputtering with the feed ar and n2 flow rate, film thickness, substrate temperature and substrate bias

    （ 5 ）用直流磁控反應濺射法，以陶瓷作為襯底，對在ar和n2不同流量、不同膜厚、不同基片溫度和對基片施加不同偏壓下沉積的薄膜，用< wp = 4 >顯微硬度計研究測試了不同工藝參數下的相應硬度。
  10. Reactive sputtering system

    反應性濺鍍系統
  11. Hysteresis in aluminum oxides films growth with pulsed reactive sputtering

    鋁靶脈沖反應濺射沉積氧化鋁薄膜中的遲滯回線的研究
  12. Three kinds of different methods, namely anode oxidation, micro - arc oxidation and dc reactive magnetron sputtering, were employed to treat aluminum substrate which is used for power electronic devices in order to get an insulating surface by form a layer of aluminum nitride ( aln ) or aluminum oxide ( al2o3 ) film

    本文分別採用陽極氧化法、微弧氧化法和磁控反應濺射沉積氮化鋁薄膜的方法對功率電子器件用金屬鋁基板表面進行絕緣化處理。
  13. The results indicate that it has an excellent surface. aln thin film was prepared from an aluminum target by dc and af reactive magnetron sputtering in nitrogen gas mixed with argon gas

    氮化鋁薄膜樣品是利用高純鋁靶，在氮氣加氬氣氣氛下用直流和射頻反應磁控濺射法制備的。
  14. Ultrathin aluminum films were prepared by dc reactive magnetron sputtering. the target was made by 99. 999 % pure aluminum

    採用直流磁控濺射法濺射純度為99 . 999 %的鋁靶制備了超薄鋁膜。
  15. The designed films of sio2 and sio2 / si are prepared on sample and hemisphere dome of sapphire by radio frequency magnetron reactive sputtering method

    利用射頻磁控反應濺射法，在藍寶石試片和半球形頭罩上制備出所設計的sio _ 2和sio _ 2 si增透膜系。
  16. Reactive sputtering source

    反應濺射源
  17. The experiments show an room temperature in the course of reactive sputtering conduces to restraining the surface reaction between hf02 and si layer ; 2. we studied different surface progress. comparable with conventional method, the surface with nh4f cleaning step have superior thermal stability with hfo2, nh4f cleaning step is introduced can reduces leakage current and eot ; 3

    柵泄漏電流的減小可歸于氧空位缺陷的減小，即高的濺射氧氣氛和氧氣氛退火有助於減小hfo _ 2柵介質中的氧空位缺陷； 4 ）研究了反應濺射制備的hfo _ 2柵介質漏電流機制及其silc效應。
  18. It was found that the decompose efficiency to solution associated with the number of films layer ; calcine temperature and ph value. some analyses have been performed. tio _ 2 films were also synthesized by reactive sputtering and chemical vapor deposition

    通過溶膠凝膠法制備了tio _ 2薄膜對其進行光催化反應實驗，發現膜層厚度、薄膜煅燒溫度和溶液ph值對降解效率都有直接的影響，並對結果進行分析。
  19. Through the technology of rf and dc reactive sputtering manufacture, h2s gas sensors have been developed on silicon substrate on which a heater made of pt were attached

    通過交流和直流反應濺射，我們以硅基片（表面上有白金加熱電極）為基底製作h _ 2s氣敏元件。
  20. The thesis main parts are as followings : ( 1 ) the mechanical properties of the cnx thin film on the various substrate materials by dc magnetron reactive sputtering. ( 2 ) the study of the cnx film structure by x - ray diffraction

    文章主要部分介紹、論述、總結了我在做畢業論文期間進行的五方面工作： （ 1 ）用直流磁控反應濺射方法在各種材料襯底上沉積cnx超硬薄膜，研究在不同襯底對薄膜的力學性質的影響。
分享友人
分享到 Line

分享到臉書