recombination temperature 中文意思是什麼
recombination temperature
解釋
復合溫度- recombination : 沖調；復水
- temperature : n. 1. 溫度，氣溫。2. 體溫。3. 〈口語〉發燒，高燒。
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This direct band - gap material has a large exciton binding energy ( 60mev ), which permits excitonic recombination even at room temperature. thus zno is attracting much attention as promising candidates for optoelectric applications in visible and ultraviolet regions
它有較高的激子束縛能（常溫下為60mev ） ，使得其在室溫下可以發射紫外激光，因此作為新一代的半導體發光材料受到廣泛關注。 -
Zno is a directed band semiconductor with a big binding energy. it has gained substantial interest because its large exiton binding energy ( 60mev ), which could lead to lasing action based exiton recombination even above room temperature, such as led, ld and so on
Zno是一種寬禁帶的直接帶隙半導體材料，具有非常高的激子束縛能（ 60mv ） ，即使在室溫條件下激子也不會分解，因此可以被用作光發射器件，如led和ld等。 -
With the rapid development of optical fiber communication technology, low - cost and high quality near infrared laser and light emitted diode working at room temperature become widely available. the emit wavelength from these light resource is not only consistent with the three low - decay windows of fiber optics, but also with many wide - frequency or recombination absorption spectrum of environmental and industrial gases
光纖通信技術的發展使相對低價、工作于常溫、高質量的近紅外激光器和發光二極體可廣泛獲得，這些發光光源的發射波長與光纖的三個低損耗窗口相一致，也與許多環境和工業氣體的泛頻或復合吸收譜線相一致。 -
It shows that the particle number will fluctuate with the recombination coefficient ; 3 ) the dynamic process of the n - type doped diamond film is simulated. the particle distributions of s, s + and ar + are gotten. the result has important reference to the investigation of n - type diamond film doping at low temperature
（ 3 ）對不同氣壓、偏壓和不同的配比情況下n型硫摻雜的金剛石薄膜的動力學過程進行了模擬，得出了摻雜元素s和s ~ +以及惰性氣體ar ~ +的粒子數分佈，計算結果對摻雜過程的研究有重要的參考價值。 -
Especially under the high temperature and medium current d ensity, it can strikingly improve the integrated properties of coating. the recombination of rare earth with organic additive can make up for the weak of single addition of rare earth
稀土對鍍層質量影響較大，尤其是在高溫中等電流密度時，可大大改善鍍層的綜合性能，而稀土與有機添加劑復合可彌補單一添加稀土的不足。 -
With the rapid development of optical fiber communication technology, low - cost and high quality near inferred laser and light emitted diode working at room temperature become widely available. the emit wavelength from these light resource is not only consistent with the three low - decay windows of fiber optics, but also with many wide - frequency or recombination absorption spectrum of environmental and industrial gases
光纖通信技術的發展使相對低價、工作于常溫、高質量的近紅外激光和發光二極體可廣泛獲得，這些發光光源的發射波長與光纖的三個低損耗窗口相一致，也與許多環境和工業氣體的泛頻或復合吸收譜線相一致。 -
4. photolumescence and micro - photoluminscence of cdznse qw / znse / cdse qds with different znse barrier thickness was studied to investigate the influence of tunneling on excitonic combination in quantum well and quantum dots. we studied the temperature dependent of the excitonic recombination
通過cdse量子點znse cdznse量子阱結構在不同壘層厚度情況下的發射譜和變溫激子發射譜，研究了激子隧穿過程對量子點和量子阱中激子復合的影響。 -
Moreover, the sio2 / tio2 composite thin film showed the lowest pl intensity due to a decrease in the recombination rate of photo - generated electrons and holes under uv light irradiation, which further confirmed the film with the highest photocatalytic activity at 700 c. when the calcination temperature was higher than 700 c, the decrease in photocatalytic activity was due to the formation of rutile and the sintering and growth of tio2 crystallites resulting in the decrease of surface area
同時，此時sio _ 2 / tio _ 2復合薄膜的熒光光譜顯示最低的熒光強度，這表明此時薄膜中的光生電子和空穴的復合速率最低，因而更有利於物質的光催化降解。當熱處理溫度高於700時，武漢理工大學碩士學位論文薄膜的光催化活性下降，這是由於薄膜中晶相二氧化欽的燒結和成長導致樣品的表面積下降以及金紅石相的形成。
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