semiconductor crystal 中文意思是什麼

semiconductor crystal 解釋
半導體晶體
  • semiconductor : n. 【物理學】半導體。
  • crystal : n 1 結晶，（結）晶體；晶粒；水晶（＝rock crystal）；石英。2 【無線電】晶體。3 結晶玻璃；雕玻璃；...
  1. Single crystal silicon is the semiconductor material which is used mostly in the present electronic industry, it play a very important role in the field of aviation - astronavigation, optics, electron and micro - electronics

    單晶硅材料是當代電子工業中應用最多的半導體材料，它在航空航天、光學、電子和微電子等領域發揮著十分重要的作用。
  2. Applying two perpendicular polarized light states and a no - light state to express information, this new theoretical system covers : a ) whole architecture constructed from light processing, light transmission, electric control and photoelectric input and output ; b ) various computing units mainly consist of liquid crystal element and polarimeter ; c ) light bus mainly consists of interlinkage optic valves ; d ) ternary memory formed from semiconductor memory ; e ) register formed from optic fiber ring ; and i ) huge - numeral management based on the new concept of calculating path and calculating channel

    這個理論包括：光處理、光傳送、電控制、綜合輸入輸出的總體結構；以液晶元件和偏振器為主的各類運算器結構；以互連光閥為主的光空間總線；以半導體存儲器為主的三值數據存儲器結構；以光纖環為主的寄存器結構；以算位、算道新概念為基礎的巨位數管理方案等。
  3. Cadmium selenide ( cdse ) single crystal is regarded as one of the most promising materials for room temperature nuclear radiation detectors, but cdse detectors have not been studied in detail because of the lack of high quality cdse single crystals and suitable technology for this semiconductor and the devices

    Cdse單晶體是最有前途的室溫核輻射探測器材料之一，但由於沒有制備出高質量的cdse單晶體，加上沒有成熟的半導體材料加工技術與器件製作工藝，人們對cdse探測器沒有進行深入的研究。
  4. Indium stannum oxide ( ito ) as semiconductor have caused a great deal of interest due to their prominent electro - optical behavior. ito has high prominent transmittance, high infrared reflectance, good electrical conductivity, ito applied as gas sensors, photovoltaic devices, heat reflecting mirrors, solar cells, flat panel displays, liquid crystal displays, electroluminescent, devices and organic light - emitting diodes ( oled ) etc. although preparations and applications of ito films have been studied deeply. nano - ito composites hardly studied

    氧化銦錫（ ito ）是一種高簡並的n型半導體，由於具有導電性，可見光高透過率，紅外反射性，穩定的化學性，被廣泛應用於熱反射建築玻璃、抗靜電塗層，太陽能電池，熱發射鏡，平板顯示器和液晶顯示屏，傳感器，有機光致二級管（ oled ）等方面，國內外對高質量的ito薄膜的制備和應用進行了深入的研究，但是很少有ito納米粒子與高分子材料復合的報道。
  5. Cadmium zinc telluride ( cd1 - xznxte or czt ) single crystal is one of the three element compound semiconductor materials with great performances used for the detection of x - ray and gamma - ray at room temperature

    碲鋅鎘（ cd _ （ 1 - x ） zn _ xte ，簡寫czt ）單晶體是一種性能優異的三元化合物半導體室溫核輻射探測器材料，具有閃鋅礦型的面心立方結構。
  6. Gaas crystal is a kind of iii - v group compound semiconductor material with good electrical performance. the semiconductor devices and integrated circuit ( ic ) fabricated on gaas substrate have such advantages of hign - speed information processing that they have drawn the researcher ' s attention

    Gaas晶體是一種電學性能優越的-族化合物半導體材料，以其為襯底製作的半導體器件及集成電路，由於具有信息處理速度快等優點而受到青睞，成為近年來研究的熱點。
  7. Testing of materials for use in semiconductor technology ; detection of crystal defects and inhomogeneities in silicon single crystals by x - ray topography

    半導體工藝使用材料的檢驗.第1部分:用x射線外形測量
  8. With the development of science and technology, more and more oxide crystals are synthesized by more and more advanced technique, the new oxide crystals are incessantly synthesized and the new characters of oxide crystals are incessantly founded. corundum dopped with impurity not only is cherished because of it ' s beautiful appearance, but also is used in the fields such as electrotechnics, mechanism, laser, the optic apparatus and the underlay of semiconductor. sapphire dopped with ti3 + is the best material of the tunable solid laser. zno crystal is material of the direct gap semiconductor ( the width of forbidden band : 3. 37ev ). the excited emission in zno crystal at room temperature has been found, so the ultraviolet luminescence in zno semiconductor can be acquired at room temperature

    含有少量雜質的剛玉晶體（ - al _ 2o _ 3 ）不僅由於其色澤艷麗成為人們珍愛的名貴寶石，而且由於它具有的優異性能，被廣泛應用於電工、機械、激光器，光學器件和半導體襯底材料。鈦藍寶石是目前最優異的固體寬帶調諧激光材料，用於製作飛秒脈沖可調諧激光器。氧化鋅晶體是直接帶隙寬禁帶半導體材料（禁帶寬度3 . 37ev ） ，現已發現具有室溫下受激發射特性，有可能實現室溫下半導體紫外發光。
  9. It was found that, the as grown crystal of mnxcd1 - xin2te4 is p type semiconductor, both the charge density and the resistivity increase with x value, while the carrier mobility decreases with x

    晶體的電學性能，發現生長態的mncd晶體均為p型半導體。隨著組分x值的增大，載流於的濃度np減小，遷移率p 。
  10. It fits smd surface crystal, optic crystal, optic glass, semiconductor silicon slice, quartz crystal slice, piezoelectricity porcelain, arsenide gallium, linb03, molybdenum slice and metal, nonmetal brittleness material both single side polishing and rubbing of pressurizing cmponets

    本機主要適用於矽片、石英晶片、 smd表面貼裝晶體、光學水晶、鈮酸鋰、玻璃、陶瓷片等薄脆金屬或非金屬材料的雙面研磨或拋光。
  11. They have been widely used in optical - fiber communication, satellite communication, super high speed computer, high speed measurement instrument, mobile communication, etc. since gaas is compound semiconductor, it is difficult to achieve high quality gaas crystal

    Gaas器件與電路具有速度高、功耗低、噪聲小、耐高溫、抗輻射等優點，在光纖通信、衛星、超高速計算機、高速測試儀器、移動通信和航空航天等領域中有著重要的應用。
  12. Sem, transmission electron microscopy ( tem ), x - ray energy - dispersion analysis ( edax ), xrd, electron diffraction ( ed ) and high - resolution electron microscopy ( hrem ) were used to investigate the morphology, atomic composition and crystal structure of the nanowires. the hexagonal cdse nanowires with single crystal structure have been obtained in dmso under 140. ( 3 ) semiconductor te and cdte nanowires embedded in aao templates were fabricated for the first time by dc < wp = 7 > electrodeposition in ethylene glycol

    Sem 、 tem 、 edax 、 xrd 、 ed 、 hrem分析的結果表明，所得cdse納米線為六方晶型，晶體的（ 001 ）晶面沿平行於基底的方向擇優生長，且隨沉積溫度的降低，這種擇優生長的趨勢越來越強；納米線晶體在生長時，由於受aao模板孔徑的限制，形成c軸方向拉長的晶粒，其長徑比達5 1以上；晶體的大小和完善程度隨沉積溫度的降低而增大， 185沉積得到多晶六方cdse納米線，而140沉積時可得到六方cdse單晶納米線。
  13. Zinc oxide is a ii - iv wide band - gap ( 3. 37ev ) compound semiconductor with wurtzite crystal structure

    氧化鋅（ zno ）是一種具有六方結構的的寬禁帶-族半導體材料，室溫下能帶帶隙eg為3 . 37ev 。
  14. Zinc oxide is a ii - iv wide band - gap ( eg = 3. 37ev ) compound semiconductor with wurtzite crystal structure

    六角纖鋅礦結構的氧化鋅是一種重要的寬帶隙-族半導體材料，室溫下帶隙為3 . 37ev 。
  15. As a direct wide - band - gap ii - vi semiconductor, znse single crystal has been identified as an important contender for the fabrication of blue - green light - diodes, nonlinear optic - electronic components and infrared devices

    Znse作為最重要的寬禁帶-族半導體，其單晶在蘭綠光發射器件、非線性光電器件和紅外器件方面有著廣泛的應用。
  16. Zinc oxide as a wide band - gap ( 3. 3ev ) compound semiconductor with wurtzite crystal structure, is gaining importance for the possible application as a semiconductor laser, due to its ultraviolet emission at room temperature

    寬禁帶zno半導體為直接帶隙材料，具有六方結構，較高的激子束縛能（ 60mev ） ，室溫下帶隙寬度為3 . 3ev 。
  17. Vo _ 2 is a typical thermochromic material. with the increase of temperature, the semiconductor - to - metal transition will occur at 68 c ; with the abrupt change of vo _ 2 crystal structure, electrical resistance and optical index of refraction transmissivity and reflectivity will change, which results in great application potentials in many fields

    Vo2是一種相變型金屬氧化物，隨溫度的升高，在相變溫度（ tc = 68 ）發生從低溫單斜結構向高溫四方金紅石結構的轉變，同時，伴隨著電阻率和紅外光透過率的突變。
  18. Diamond is a remarkable material due to its special crystal structure, which shows high hardness, low friction coefficient, high thermal conductivity, high optical transparency, low permittivity and high band gap etc. cvd diamond films are widely used in mechanical coating, heat sinks, optical window, semiconductor devices and other application fields because of its low price and high performance

    金剛石的特殊晶體結構使其成為一種性能優異的功能材料，它具有高硬度、低摩擦系數、高熱導率、高透光率、低介電系數和高禁帶寬度等性質。化學氣相沉積制備金剛石膜成本低、質量高，廣泛應用於工具塗層、熱沉、光學窗口、半導體器件等方面。
  19. State of art - s semiconductor crystal materials

    族化合物半導體單晶材料發展動態
  20. To smooth the surface of a wafer or semiconductor crystal

    使晶片或半導體晶體的表面光滑的過程。
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