silicon semiconductor materials 中文意思是什麼

silicon semiconductor materials 解釋
硅半導體材料
  1. Testing of materials for semiconductor technology - measurement of carrier lifetime in silicon single crystals - recombination carrier lifetime at low injection by photoconductivity method

    半導體工藝材料的試驗.硅單晶中載流子壽命的測量.用
  2. As one kind of si nanostructures, si - rich si02 films are the important si - based light - emitting materials. moreover, silicon is the leading semiconductor in the microelectronic industry. furthermore si02 films as passitive and insular layers are widely used in si device and integrated circuit. so si - rich films are considered suitable for optoelectronic applications

    另一種觀點認為納米硅薄膜中的可見光發射來自界面或介質層中的發光中心。還有人認為對于鑲嵌在sio _ 2中的納米晶粒來說，與氧有關的缺陷可能是導致可見光或藍綠光發射的主要原因。
  3. Testing of semiconductor materials ; measurement of the resistivity of silicon or germanium single crystals by means of the four probe direct current method with collinear array

    半導體材料的試驗.用探針直線排列的四探針直流法測
  4. Testing of materials for use in semiconductor technology ; detection of crystal defects and inhomogeneities in silicon single crystals by x - ray topography

    半導體工藝使用材料的檢驗.第1部分:用x射線外形測量
  5. Testing of semiconductor materials ; determination of the radial resistivity variation of silicon or germanium slices by means of the four - probe direct current method

    半導體材料試驗:採用四探針直流法測量矽片和鍺片電
  6. Testing of materials for semiconductor technology - determination of defect types and defect densities of silicon epitaxial layers

    半導體工藝材料的檢驗.硅晶體外延層缺陷種類和缺陷密
  7. Such an advance would enable engineers to incorporate both electronic and optical devices onto cheap silicon chips rather than being compelled to employ costly - to - make lasers based on “ exotic ” semiconductor materials such as gallium arsenide or indium phosphide

    如果成功，工程師就能在成本低廉的矽晶片上同時製作電子和光學裝置，不需使用砷化鎵或磷化銦等稀有半導體材料，製作成本高昂的半導體雷射。
  8. Silicon semiconductor materials

    矽半導體材料
  9. Testing of materials for semiconductor technology - determination of impurity content in silicon by infrared absorption - part 1 : oxygen

    半導體工藝材料檢驗.用紅外吸收法測量硅的雜質含量
  10. Second, in luminescence materials hole or electron concentration will change with the doping content. so we expand the hole or electron concentration in taylor expansion and calculat the optimum doping contents. for several semiconductor materials such as zns : mn, silicon doped er and gaas, gap, gan doped different materials, we calculat their optimum doping contents which arc close to some experimental results

    應用該表達式，給出了各種不同的制備方法zns摻mn 、硅基摻鉺、以及gaas 、 gap 、 gan摻不同元素制出的發光材料，對最佳摻雜含量進行了理論上的計算，理論計算值與實驗數據相符合。
  11. Testing of materials for semiconductor technology ; determination of impurty content in silicon by infrared absorption ; carbon

    半導體工藝材料的檢驗.第2部分:用紅外線吸收法測量硅
  12. Besides the element semiconductors, such as si ( called the first generation semiconductor ), and the compound semiconductors, such as gaas, inp ( called the second generation semiconductor ), silicon carbide ( sic ) is one of the wide band - gap semiconductor materials ( called the third generation semiconductor )

    碳化硅（ sic ）材料是繼第一代元素半導體（ si ）和第二代化合物半導體（ gaas 、 inp 、 gap等）材料之後的第三代寬帶隙半導體材料。
  13. The activation analysis method for the determination of elemental impurities in semiconductor silicon materials

    半導體硅材料中雜質元素的活化分析方法
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