sputtering chamber 中文意思是什麼
sputtering chamber
解釋
濺射室- sputtering : 飛濺
- chamber : n 1 〈古、詩〉室，房間；寢室，臥室；〈pl 〉套房；〈pl 〉律師[法官]辦公室。2 會議室，會場；議會，...
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Water steam was used as oxidant, and the optimum water steam partial pressure is between 1 10 - 4 and 5. 5 10 - 4 pa. under the optimum growth parameters, a ceo _ 2 seed layer with highly textured degree was successfully prepared. beside the one step process was experimented in this dissertation, the two step process was proposed and studied to further improve the quality of ceo _ 2 seed layer. in the two step process, about 15 nm thick of ce metal layer was deposited on metallic substrate at the first step, then water steam was introduced in the chamber, and the ceo _ 2 thin films were subsequently deposited with reactive sputtering in the
總結出沉積ceo _ 2薄膜的優化工藝條件，當沉積溫度為720 - 850 、水蒸汽分壓介於1 10 - 4 - 5 . 5 10 - 4pa之間、退火時間40min時，獲得了織構程度良好的ceo _ 2種子層薄膜; 3 .由於一步法制備ceo _ 2種子層中水分壓范圍狹窄，工藝條件難以控制，並且退火延長了薄膜的制備時間，因此，本論文又採用了兩步生長法沉積ceo _ 2種子層，即:先在ni - w基帶上沉積一層約15nm的金屬ce薄膜，再通入氧化氣氛（水蒸汽） ，繼續進行薄膜沉積。 -
Study of pressure distribution in sputtering chamber of multi - source roll coater
多靶連續卷繞鍍膜機濺射室布氣均勻性研究 -
In succession, tini thin film is deposited on single - crystal silicon substrate using optimized parameters utilizing sputtering, and its transformation temperature ( a * ) is 72 ? indicated by dsc curve after being annealed in an ultra - high vacuum ( uhv ) chamber. in addition, the composition of the silicon - based tini film was analyzed by an energy dispersive x - ray spectroscopy ( eds ), and the ti content in the film is approximately 51at %
按照改進的工藝參數，在單晶硅襯底上濺射-淀積了tini薄膜，並進行了超高真空退火， dsc法測得其馬氏體逆相變峰值溫度為72 ，利用能譜分析（ eds ）技術測得其ti含量約為51at ，通過對非晶tini薄膜與單晶硅襯底之間的界面進行eds及x射線衍射（ xrd ）分析，發現在用大功率（ 2000w ）直流磁控濺射法制備tini薄膜過程中，存在ti 、 ni與si的雙向擴散，發生了界面反應，並有三元化合物ni _ 3ti _ 2si生成。 -
The work mainly consists of four parts : the first part is to use oxidation and lpcvd technique to produce sio2 mask film and si3n4 insulation film in order to enhance the heating efficiency of micro chamber, and guarantee the carry out of the reaction. the second part is to use the combination of dry etching and wet etching to produce reaction micro chamber, it is the container which carry out the pcr reaction, and dna sample carry out amplification reaction here. the third part is to use the sputtering, photolithography to produce heaters and temperature sensors which heat the reaction micro chamber and provide the temperature condition for the pcr reaction
首先，利用氧化工藝和lpcvd技術，生長sio _ 2掩膜層和si _ 3n _ 4絕緣層，以提高反應腔的熱效率，保證擴增反應的順利進行；其次，用濕法腐蝕和干法刻蝕相結合的方法加工微型腔體，使之作為dna樣品進行pcr擴增反應的容器；第三，用濺射、光刻等工藝在微型腔體底部製作微型加熱器和溫度傳感器，實現對反應腔體的加熱及其溫度的精確測量，提供pcr擴增反應所需的溫度條件。
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