temperature gap 中文意思是什麼

temperature gap 解釋
熱間隙
  • temperature : n. 1. 溫度，氣溫。2. 體溫。3. 〈口語〉發燒，高燒。
  • gap : n 1 （墻壁、籬笆等的）裂口，裂縫；豁口，缺口。 【軍事】突破口。2 （意見的）齟齬，分歧；隔閡，距離...
  1. Rich variety of natural climate, dry and rainless, irrigated by the melt water of tianshan mountain ' s ice and snow, sufficient sunlight, significant temperature gap between day and night, suitable for growth and cultivation of different types of wine grape, few disease and pest, high grape sugar contents level, moderate acid level, good color and luster, ideal material for producing top grade green food wine

    自然氣候類型多樣，乾旱少雨，天山冰雪融水灌溉，光照充足，晝夜溫差大，適宜酒葡萄不同品種的生長發育，病蟲害少，葡萄果粒含糖量高，酸度適中、色澤好，是生產綠色食品高檔葡萄酒的理想原料。
  2. When sulphurisation time is 30 minutes and sulphurisation temperature change from 180 to 240, the atomic ratio s / sn of the films increases from 0. 72 to 1. 08 and energy gap of the films increases from 1. 44ev to 1. 48ev with the increasing of the sulphurisation temperature

    當硫化時間為30分鐘硫化溫度在240 ~ 310之間變化時，薄膜的s / sn值隨著硫化溫度的升高從1 . 08上升到1 . 96 ，能帶間隙隨著硫化溫度的升高從1 . 01ev上升到1 . 72ev 。
  3. The research includes temperature controlling in deep cool condition, data sampling, relationship between levitation force and levitation gap in different temperature, and relationship between levitation force and temperature in a certain levitation gap - the deep cool condition is provided by g - m refrigerator, and a bent adapter connector fixed on second step cooling head is designed to fix ybacuo bulk

    研究包括深冷環境下的溫度控制；數據採集；不同溫度下懸浮力與懸浮間距的關系及一定懸浮間距下懸浮力與溫度的關系。在g - m製冷機作用下實現深冷測試環境，並設計出固定於製冷機二級冷頭處的轉變接頭以固定高溫超導體。
  4. Characterized by wide band gap, high breakage electric field, high thermal conductivity, high saturated electron mobility, cubic silicon carbide ( 3c - sic ), considered as one of the most promising wide band gap semiconductors, is widely utilized in high temperature, high frequency and large power semiconductor devices

    3c - sic被譽為最有潛力的寬禁帶半導體材料，具有帶隙寬、臨界擊穿電場高、熱導率高、飽和電子漂移速度大等優點，是高溫、高頻、高功率半導體器件的首選材料。
  5. Zinc oxide ( zno ) is a wide band - gap semiconductor, 3. 37 ev at room temperature, with the high exciton binding energy of 60 mev

    Zno是一種寬帶隙半導體材料，室溫下它的能隙寬度為3 . 37ev ，激子束縛能高達60mev 。
  6. Dongxu zhao ( condensed matter physics ) directed by prof. dezhen shen and prof. yichun liu zinc oxide ( zno ) is a wide band - gap semiconductor ( 3. 37 ev at room temperature ) with the high exciton binding energy of 60 mev

    = zno是一種寬帶隙的半導體材料，室溫下它的能隙寬度為3 . 37ev ，激子束縛能高達60mev 。
  7. Zinc oxide ( zno ) is an important wide band gap ( eg = 3. 37ev ) semiconductor materials, its exciton binding energy is 60mev. these characters make it is expected to be applied in the ultraviolet optoelectronic devices which can be operated at room temperature

    氧化鋅（ zno ）是一種重要的寬禁帶（ eg = 3 . 37ev ）半導體材料，其激子束縛能高達60mev ，在室溫紫外光電器件方面有巨大的應用潛力。
  8. This direct band - gap material has a large exciton binding energy ( 60mev ), which permits excitonic recombination even at room temperature. thus zno is attracting much attention as promising candidates for optoelectric applications in visible and ultraviolet regions

    它有較高的激子束縛能（常溫下為60mev ） ，使得其在室溫下可以發射紫外激光，因此作為新一代的半導體發光材料受到廣泛關注。
  9. Zno film is a novel - direct compound semiconductor with wide band gap energy of 3. 37ev and a exciton binding energy 60mev at room temperature. due to its the prerequisite for visible or ultraviolet light emission at room temperature, it has the tremendous potential applications for ultraviolet detectors, leds, lds. zno thin film is used widely and effectively in the fields of surface acoustic wave devices, solar cell, gas sensors, varistors and so on because of its excellent piezoelectrical performance

    室溫下禁帶寬度為3 . 37ev ，激子束縛能為60mev ，具備了室溫下發射紫外光的必要條件，在紫外探測器、 led 、 ld等領域有著巨大的發展潛力； zno薄膜以其優良的壓電性能、透明導電性能等使其在太陽能電池、壓電器件、表面聲波器件、氣敏元件等諸多領域得到廣泛應用。
  10. With the development of science and technology, more and more oxide crystals are synthesized by more and more advanced technique, the new oxide crystals are incessantly synthesized and the new characters of oxide crystals are incessantly founded. corundum dopped with impurity not only is cherished because of it ' s beautiful appearance, but also is used in the fields such as electrotechnics, mechanism, laser, the optic apparatus and the underlay of semiconductor. sapphire dopped with ti3 + is the best material of the tunable solid laser. zno crystal is material of the direct gap semiconductor ( the width of forbidden band : 3. 37ev ). the excited emission in zno crystal at room temperature has been found, so the ultraviolet luminescence in zno semiconductor can be acquired at room temperature

    含有少量雜質的剛玉晶體（ - al _ 2o _ 3 ）不僅由於其色澤艷麗成為人們珍愛的名貴寶石，而且由於它具有的優異性能，被廣泛應用於電工、機械、激光器，光學器件和半導體襯底材料。鈦藍寶石是目前最優異的固體寬帶調諧激光材料，用於製作飛秒脈沖可調諧激光器。氧化鋅晶體是直接帶隙寬禁帶半導體材料（禁帶寬度3 . 37ev ） ，現已發現具有室溫下受激發射特性，有可能實現室溫下半導體紫外發光。
  11. High purity partially stabilized zirconia ( psz ) ceramic foam filter ( cff ) that is the ideal ceramic foam for melted casting steel and high temperature alloy has been put into practice largely in foreign. there is a huge gap between china and developed countries. so this study need develop

    鑄鋼與高溫合金用高純部分穩定氧化鋯（ psz ）質泡沫陶瓷過濾器在國外已有較大規模的應用，國內與之差距很大，相關研究工作還亟待展開。
  12. Silicon carbide is becoming the most promising semiconductor material for high temperature, high frequency and high power devices because of its superior properties such as wide band gap, high breakdown field, high electronics saturation drift velocity, and high thermal conductivity

    Sic材料由於具有寬禁帶、高臨界擊穿電場、高飽和電子漂移速度、較大的熱導率等優良特性，因此成為製作高溫、高頻、大功率器件的理想半導體材料。
  13. Featured by wide band gap, high breakage electric field, high electron mobility, low dielectric constant, strong irradiation proof and excellent chemical stability, silicon carbide ( sic ), viewed as one of the most promising wide band gap semiconductors, is widely utilized in optoelectronic devices, high frequency and large power, high temperature electronic devices

    被譽為最有潛力的寬禁帶半導體材料一sic ，因其具有禁帶寬度大、擊穿電場高、熱導率大、電子飽和漂移速度高、介電常數小、抗輻射能力強、良好的化學穩定性等優異的特性，被廣泛地應用於光電器件、高頻大功率、高溫電子器件。
  14. 602g / ( cm2, hour ), it led to a temperature gap of 0. 5 ? in average at 0

    混凝土下墊面的近地層溫度在觀測的溫度范圍內與蒸發量呈一定的正相關。
  15. The possible factors including the deviation of temperature in length and breadth of rod, the changes of transfiguration resisting force under the changes of temperature, the adjustment of roll gap, the variation of rolling pressure, the changes of roller speed during dynamic adjusting press, the unmatched of seconds - flux under the dimension fluctuation of the coming sample and so on. the whole system was a closed loop which factors in it interacts each other

    可能的影響因素有:沿軋件縱橫向溫度變化、由溫度引起的軋件變形抗力變化、軋機輥縫值變化、負載變化、電機調節系統由不穩定向穩定過渡過程中軋輥轉速的變化（如咬鋼過程中的動態速降后的回復階段） 、來料尺寸波動造成秒流量不匹配等，整個模擬系統是各個因素相互影響關聯的一個閉環系統。
  16. Firstly, the temperature varies in a large range in the place where the gap sensor works, so this paper analyzes the temperature drift of gap sensor, and finds out that the main reasons which result in temperature drift are the resistance of detecting coil and demodulating circuit parameters. to resolve this problem, a practical design of detecting coil is given, and a compensative measure considering the detecting coil and demodulation circuit is proposed to improve the temperature stability of gap sensor

    首先，針對間隙傳感器工作環境溫度變化較大的情況，本文對間隙傳感器溫度漂移現象進行了分析，認為檢測線圈電阻和檢波電路參數變化是造成傳感器溫漂的主要原因，建立了檢測線圈的數學模型，提出了檢測線圈和檢波電路綜合補償方法，解決了間隙傳感器的輸出信號溫度穩定性的問題。
  17. Its band gap is 2. 42ev at room temperature. cds nanoparticles show significant quantum - size effect when their sizes are smaller than 6nm

    當cds粒子的粒徑小於其激子的玻爾半徑（ 6nm ）時，它能夠呈現出明顯的量子尺寸效應。
  18. Simulating results reveal that hydrodynamics of catalysts in riser reactor is very complex due to the effect of injection and catalysts backmix dramatically near the nozzle, reaction products unevenly distributie along the riser height, there exists apparently temperature gap between gas - phase and solid - phase near the nozzle and the temperture of two phase is nearly equal at middle - top part

    模擬結果表明，由於原料油射流的影響，提升管反應器內催化劑顆粒的流動特徵非常復雜，在噴嘴附近的催化劑顆粒存在明顯的滑落返混；裂化產物濃度沿提升管存在非均勻分佈；氣粒兩相間溫差在噴嘴附近顯著，在中上部氣粒兩相溫度幾乎相等。
  19. In this article, high performance concrete applied to some thin wall pilla structure was worked out successfully in the west of china with big temperature gap by a large number of experiments, in order to improve cracking resistence and optimize mix of concrete, which will be helpful in improving concrete construction

    通過大量試驗，以混凝土抗裂性能為評價指標，優化混凝土配合比組成，成功配製出了適用於西部大溫差地區某橋梁薄壁墩結構的高性能混凝土，為混凝土施工提供了有力的保障。
  20. In the result, the tensile stress which is produced because of temperature gap has been decreased or eliminated entirely. combined with some other measures, the construction and design for non - expansion joint of super - length structure has been carried out successfully

    從而不僅滿足了鋼筋混結構設計規范： 「如有充分依據和可靠措施，伸縮西安建築科技大學碩士學位論文縫最大間距可適當增大」的要求。
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