through current bias 中文意思是什麼
through current bias
解釋
直通電流偏置-
This condition, known as reverse bias, is not conducive to current flow through the junction.
這種叫做反向偏置的狀態不利於電流穿越結。 -
We apply the agrawal ' s theory model of soa, and study the temporal characteristics of the output pulse for input picosecond optical pulses with different sharpness edges passing through a semiconductor optical amplifier, and find that the peak power and the pulse width of the output pulse depend on the input pulse peak power, the sharpness degree of the input pulse edge and the bias current of soa
本文應用agrawal的關于soa理論模型，詳細研究了具有不同陡峭邊沿的皮秒超高斯光脈沖經soa后的時域特性的變化，發現輸出脈沖的峰值功率、脈沖寬度與輸入脈沖的峰值功率、輸入脈沖邊沿的陡峭程度以及soa的偏置電流密切相關。 -
The bias magnetic field of the bias coil driven by bias current and small signal test current, results in the induced signal of the control coil. the terminal voltage of the control coil is detected by the test circuit. then the signal containing the information of rotor displacement is obtained, from which we can get the dc voltage signal proportional to the rotor displacement through half - wave rectification circuit and low pass circuit. this dc signal is put into a pid controller to get the control signal of the rotor displacement
偏置測試電路向偏置線圈輸入偏置電流和小信號測試電流，兩者產生的偏置磁場在控制線圈產生感應信號，檢測電路檢測控制線圈端電壓並提取含有轉子位移信息的電壓信號，該信號經半波整流電路和低通濾波電路后得到與轉子位移成正比例的直流信號，再由pid控制器轉換為轉子位移的控制信號，最後控制信號輸入功放電路產生控制電流，實現閉環控制。 -
We have investigated transport properties of electrons in magnetic quantum structures under an applied constant electric field. the transmission coefficient and current density have been calculated for electron tunneling through structures consisting of identical magnetic barriers and magnetic wells and structures consisting of unidentical magnetic barriers and magnetic wells. it is shown that the transmission coefficient of electrons in a wider nonresonance energy region is enhanced under an applied electric field. the resonance is suppressed for electron tunneling through double - barrier magnetic ( dbm ) structures arranged with identical magnetic barriers and magnetic wells. incomplete resonance at zero bias is changed to complete resonance at proper bias for electron tunneling through dbm structures arranged with different magnetic barriers and magnetic wells. the results also indicate that there exist negative conductivity and noticeable size effect in dbm structures
對磁量子結構中電子在外加恆定電場下的輸運性質進行了研究.分別計算了電子隧穿相同磁壘磁阱和不同磁壘磁阱構成的兩種磁量子結構的傳輸概率和電流密度.計算結果表明，在相當寬廣的非共振電子入射能區，外加電場下電子的傳輸概率比無電場時增加.對于電子隧穿相同磁壘磁阱構成的雙磁壘結構，共振減弱；對于電子隧穿不同磁壘磁阱構成的雙磁壘結構，無電場作用時的非完全共振在適當的偏置電壓下轉化為完全共振，這時的電子可實現理想的共振隧穿.研究同時表明，磁量子結構中存在著顯著的量子尺寸效應和負微分電導 -
The traditional bandgap reference circuit was improved in the design, which includes the applying of self - bias structure and cascode structure, output of the opamp was used as self - bias voltage, saving bias circuit, and then it was helpful to get low power consumption. through using poly resistance of high value with low temperature coefficient, we reduced the influnce to circuit, if power supply did not change, we must decrease operating current to decrease power consumption, and increasing value of resistor could decrease the operating current efficiently. poly resistance of high value had large value of squared resistor, so we could save layout area
對傳統帶隙基準電路進行了改進設計，採用自偏置結構和鏡像電流鏡結構，利用運放的輸出電壓作為運放的偏置電壓，節省了偏置電路，降低了功耗;使用低溫度系數的多晶硅高值電阻，降低了電阻溫漂對電路的影響;在電源電壓不變的情況下，為了減小功耗就必須減小工作電流，而增大電阻的阻值能有效地減小工作電流，多晶硅高值電阻的方塊電阻很大，可以節省版圖面積。 -
The results that increasing of bias current and shunted resistance and lowing critical current and connected inductance can decrease the transmission time are shown ; ( 4 ) a new type of circuit, ladder shape multiplayer jtl. structure is provided by author, thus output signal of rsfq circuits can be amplified before transfer to room temperature electronics system. it has highly gain of amplify relatively and the double peak structure are avoided through decreasing parasitic capacitance
（ 4 ）針對目前超導與室溫介面電路的電壓放大器存在的「雙峰」和放大增益效率較低的不足，提出了一種全新的階梯式多層jtl電壓放大電路結構，較好的解決了以上的問題，通過初步的模擬分析證實，該電路的構思極負有創新性。
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