ultraviolet illumination 中文意思是什麼

ultraviolet illumination 解釋
紫外線照明
  • ultraviolet : adj. 【物理學】紫外的；紫外線的；產生[應用]紫外線的。n. 紫外線輻射。
  • illumination : n. 1. 照明，光照；照（明）度；〈常用 pl. 〉 燈飾。2. 啟發，啟蒙。3. （手寫本的）彩飾。illuminative adj.
  1. This is so because climbing plants are likely to encounter intensive - changing environmental condition during their growth ( especially change of illumination ). secondly, there is a large proportion ( 30 - 40 % ) of climbing plants which belong to dioecism, and hence a gap between male and female plants on morphology, biological characteristic, economic value and so on. this dissertation focuses on herbaceous climbing plants, perennial or annual species such as dioecious trchosahthes kirilowii maxin and dioscorea opposita thumb, and monoecious luffa cylindrical ( l ) roem, it attempts to discover how climbing plants adapted to various environments and the mechanism of adaptation from aspects of physiological and reproductive ecologies at present, due to overuse of chlorofluorocarbons ( cfcs ), the ozonosphere has become thinner and thinner, and the ultraviolet - b ( uv - b ) radiation has increased considerably

    而攀援植物本身是一類理想的植物行為生態學研究材料：第一，攀緣植物由於受攀緣能力和支柱木資源的限制，在生長過程中通常要遇到強烈變化的環境條件（特別是光照） ；第二，攀緣植物中具有較高比例的雌雄異株類型，通常佔地區攀緣植物種類的30 40左右，不同性別的植物在形態學及生物學特性、經濟價值等方面存在一定的差距，因此，本文以雌雄異株攀緣植物栝樓（ trchosahtheskirilowiimaxim ） （葫蘆科多年生草質藤本植物）和山藥（ dioscoreaoppositathunb ） （薯蕷科薯蕷屬植物） 、雌雄同株異花攀緣植物絲瓜[ luffacylindrical （ l ） roem ] （葫蘆科一年生攀緣草本植物）為材料，試圖從生理生態學及生殖生態學角度揭示攀援植物如何適應不同生境及其機理。
  2. Additional, strength of illumination of summerly autumn season is relative taller, the ultraviolet ray in sunshine has to virus very strong exterminate action

    另外，夏秋時節光照強度相對更高，陽光中的紫外線對病毒有很強的殺滅作用。
  3. By measuring the ultraviolet - light - induced absorption coefficeint change, we believed that the ultraviolet - light induced absorption changes were ascribed to the generation of the small polarons o ( superscript - ) under the illumination of uv lights

    通過對不同組份摻鎂鈮酸鋰晶體紫外光致吸收的動態暗衰減過程的測量，我們認為摻鎂鈮酸鋰晶體中紫外光致吸收的淺能級缺陷中心是o （上標- ）小極化子。
  4. Extreme ultraviolet lithography ( euvl ) represents one of the promising technologies for supporting integrated circuit ( 1c ) industry ' s lithography needs during the first decade of the 21st century. this technology builds on conventional optical lithography experience and infrastructure, uses 11 - to 14 - nm photon illumination, and is expected to support multiple technology generation from 65 nm to 35 nm

    極紫外投影光刻（ euvl ， extremeultravioletlithography ）技術作為下一代光刻技術中最佳候選技術，建立於可見/紫外光學光刻的諸多關鍵單元技術基礎之上，工作波長為11 14nm ，適用於製造特徵尺寸為65 35nm的數代超大規模集成電路，預計在2006年將成為主流光刻技術。
  5. Gan - based meta1 - semiconductor - metal ( msm ) structure ultraviolet photodetector has been one of the focuses of interest in recent years for its plane structure, fabrication simplicity, and easy integration. however, the mechanisms of the i - v characteristics under illumination, the photocurrent gain and the strong persistent photoconductivity ( ppc ) are still unexplained to this day

    當前， gan基msm結構紫外探測器在穩態光照下的電流和響應度隨偏壓變化的關系、實驗中觀測到的光增益現象以及持續光電導效應（ ppc ） ，都沒有明確的理論解釋，因此器件設計中難以保證gan基msm結構紫外探測器的性能。
分享友人
分享到 Line

分享到臉書