valence band 中文意思是什麼
valence band
解釋
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In the band structure, one band that is completely filled with electrons is termed valence band
在能帶結構中，完全填滿電子的帶被稱為價帶。 -
A model of the interface state density distribution near by valence band is presented, and the dependence of the threshold voltage on temperature, the c - v characteristics and the subthreshold characteristics are predicted exactly with this model ; the effects of s / d series resistance on the output characteristics, transfer characteristics and effective mobility of sic pmosfets are analyzed. thirdly, the output characteristics and the drain breakdown characteristics are modeled with the procedure medici. the output characteristics in the room temperature and 300 ? are simulated, and the effects of gate voltage. contact resistance, interface state and other factors on sic pmos drain breakdown characteristics are analyzed
提出了一個價帶附近的界面態分佈模型，用該模型較好地描述了sicpmos器件閾值電壓隨溫度的變化關系、 c - v特性曲線以及亞閾特性曲線；分析了源漏寄生電阻對sicpmos器件輸出特性、轉移特性以及有效遷移率的影響；論文中用模擬軟體medici模擬了sicpmos器件的輸出特性和漏擊穿特性，分別模擬了室溫下和300時sicpmos器件的輸出特性，分析了柵電壓、接觸電阻、界面態以及其他因素對sicpmos擊穿特性的影響。 -
As a result, the fermi level at the surface will shift towards the valence band maximum ( vbm ). accordingly the band bending increases, and the surface depletion layer thickness enhances, therefore, the channel thickness reduces. this is the main factor resulting in the decrease of saturated drain - source current
表面費米能級向價帶頂移動，能帶彎曲加劇，肖特基勢壘高度增加，表面耗盡層變厚，導電溝道變窄，是導致源漏飽和電流下降的主要因素。 -
The highest - energy band containing electrons is called the valence band, and the next higher one is the conduction band
填有電子而能量最高的能帶稱為價帶，相鄰的更高能帶稱為導帶。 -
The reason is that their valence band is full of electrons, which obstructs current flow
因為它們的價帶填滿了電子，使電流無法流動。 -
Effective masses at the top of valence band and at the bottom of conduction band are deduced from the band structure
價帶頂和導帶底的有效質量從計算得到的能帶結構中求出。 -
2. from the si and er core ievel spectra and the si valence band spectrum a rather detailed description of the er / si ( 00l ) interface formation is presented. the following results can be extracted
2鉺硅（ 001 ）界面、表面及鉺硅化物最初形成過程研究首先利用同步輻射光電子能譜方法研究了室溫下鉺在硅（ 001 ）表面的淀積和退火過程。 -
We also have analyzed the photoluminescence ( pl ) spectra of some zno films, it turns out that the emission of ultraviolet light comes from the radiative recombination of excitons within nano - crystal energy band - gap, and the pl peaks move to smaller wavelength because zn are substituted by fe, co, and cu, which cause the size of the film grains smaller and the effective band - gap bigger. the red emission of zno films is due to, on the one hand, decrease of the film grains size which causes the emission intensity smaller and smaller until it disappears abruptly, on the other hand, the transition of electrons from deep donor level of the oxygen vacancies to the valence band
另外，我們還對薄膜光致發光性質進行了分析和研究，結果表明：納米結構zno薄膜的紫外發光來源於帶間激子的輻射復合發光， pl譜的帶邊發射峰發生藍移是由於fe 、 co 、 cu對zn的替代使薄膜粒子的尺寸減小，使薄膜的有效帶隙增寬； zno薄膜的紅色發光，一方面是zno顆粒尺寸的減少，帶間的激子發射峰越來越弱直至猝滅，另一方面主要是與zno晶格中的o空位有關，由深能級復合發光引起紅光發射。
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