x ray chamber 中文意思是什麼
x ray chamber
解釋
射線暗箱-
In euv and soft x - ray band, the most often used detector is ion chamber with rare gas, from whose collective electrode we can directly calculate intensity of photon flux
在極紫外和軟x射線波段常用的探測器是稀有氣體電離室，可以通過電離室收集極的收集電流直接計算出光子流強度。 -
Ionization in a free-air chamber is the standard process for measuring x-and γ-ray exposure.
自由空氣電離室中的電離作用是量度x和射線照射量的標準方法。 -
Ionization in a free-air chamber is the standard process for measuring x-and r-ray exposure(in roentgens).
自由空氣電離室中的電離作用是量度x和r射線照射量（倫琴）的標準方法。 -
At first, it describes structure of the full - length prototype, manufacturing craft and prepare to work, including sting, sealing, wire tension and leak current measurement, mounting of the preamp, gas system, high voltage system, reduction of noise and so on. the construction of full - length prototype provided valuable experience and important reference to the besiii drift chamber. then good function of the full - length prototype was performed using 55fe 5. 9kev x _ ray source. we can see that the uniformity of gas gain of the full - length prototype is well and it is effective for the compensation voltage to adjust the uniformity of gas gain of the boundary cells
為了初步測試模型的性能用55fe5 . 9kevx射線進行了氣體增益的均勻性檢測，隨之用55fe5 . 5kevx射線初步測試了模型性能，對部分高壓和補償電壓的設置進行了調整，驗證了對邊界場絲層加補償電壓能夠有效地調節邊緣層氣體增益的均勻性，實驗結果表明全長模型能正常工作並具有良好的性能。 -
In succession, tini thin film is deposited on single - crystal silicon substrate using optimized parameters utilizing sputtering, and its transformation temperature ( a * ) is 72 ? indicated by dsc curve after being annealed in an ultra - high vacuum ( uhv ) chamber. in addition, the composition of the silicon - based tini film was analyzed by an energy dispersive x - ray spectroscopy ( eds ), and the ti content in the film is approximately 51at %
按照改進的工藝參數，在單晶硅襯底上濺射-淀積了tini薄膜，並進行了超高真空退火， dsc法測得其馬氏體逆相變峰值溫度為72 ，利用能譜分析（ eds ）技術測得其ti含量約為51at ，通過對非晶tini薄膜與單晶硅襯底之間的界面進行eds及x射線衍射（ xrd ）分析，發現在用大功率（ 2000w ）直流磁控濺射法制備tini薄膜過程中，存在ti 、 ni與si的雙向擴散，發生了界面反應，並有三元化合物ni _ 3ti _ 2si生成。
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