寬頻帶器件 的英文怎麼說

中文拼音 [kuānbīndàiqìjiàn]
寬頻帶器件 英文
wide frequency band device
  • 頻 : Ⅰ形容詞（次數多） frequent Ⅱ副詞（屢次） frequently; repeatedly Ⅲ名詞1 [物理學] （物體每秒鐘振動...
  • 器 : 名詞1. （器具） implement; utensil; ware 2. （器官） organ 3. （度量; 才能） capacity; talent 4. （姓氏） a surname
  • 件 : Ⅰ量詞（用於個體事物） piece; article; item Ⅱ名詞1. （指可以一一計算的事物） 2. （文件） letter; correspondence; paper; document
  • 寬頻 : bisdn
  1. Delay line oscillator is composed of broadband amprifer adjustable attenuator and saw sensor device. after output signal of delay line oscillator is smoothed, it mixes with 109mhz local oscillation signal. its differential frequency signal is smoothed by low - pass filter trimmed by shaping circuit and processed by digital processing circuit

    延遲線振蕩器由寬帶放大器、可調衰減器和聲表面波質量傳感器件構成。延遲線振蕩器輸出信號經濾波后與109mhz的本機晶體振蕩器輸出信號相混頻，通過低通濾波取其差頻，並經整形後由數字信號處理電路處理。
  2. The factors limiting the frequency band of the wide - band amplifier are introduced. through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics, a method of improving fr of mosfet by using short channel device and making mosfet work at the saturation region through raising vgs is put forward ; the effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit, current pattern circuit and frequency characteristics are analyzed. according to the linear theory of transconductance which is applied in the bit circuit, the current pattern amplifier circuit, current transfer circuit and output circuit which consist of mosfet and the wide - band amplifier composed of them are put forward

    介紹了限制寬帶放大器頻帶寬度的因素，通過分析mosfet的本徵參數、寄生參數對頻率特性的影響，提出了採用短溝器件、使mosfet工作在飽和區、抬高柵源電壓等提高mosfet特徵頻率的方法；分析了不同電路組態對放大器頻率特性的影響、節點電壓對電壓模電路、電流模電路頻率特性的不同影響，根據應用於雙極晶體管電路的跨導線性原理，提出了採用mosfet構成的電流模放大電路、電流傳輸電路、輸出電路以及由它們所組成的寬帶放大器，獲得了良好的頻率響應。
  3. With the rapid development of the semiconductor technology, large of the vacuum electronic device has replaced by the semiconductor element from the middle period of the last century. however, the vacuum electronic device owns tremendous prepotency in the exceed - high frequency and wide frequency band and high power field, especially in the exceed - high power field. the complexion won ’ t be changed for a long period

    自上世紀中後期開始，隨著半導體技術的飛速發展，許多真空電子器件逐步被半導體器件取代，但是，在超高頻、寬頻帶、大功率，尤其是超大功率領域，真空電子器件在技術和經濟方面至今仍擁有巨大的優勢，而且在今後相當長的時期內，這種局面也不會改變。
  4. From the middle - later period of the last century, with the rapid development of the semiconductor technology, large of the vacuum electronic device was replaced by the semiconductor element. however, the vacuum electronic device owns tremendous prepotency in the exceed - high frequency and high power field. this complexion won ’ t be changed for a long period

    自上世紀中後期開始，隨著半導體技術的飛速發展，許多真空電子器件逐步被其取代，但是，在超高頻、寬頻帶、大功率，尤其是超大功率領域，真空電子器件在技術和經濟方面至今仍擁有巨大的優勢，而且在今後相當長的時期內，這種局面也不會改變。
  5. We study the cost of metro wdm in two aspects in chapter 2. for the aspect of components, a bidirectional optical add - drop multiplexer ( boadm ) using fiber gratings and circulators is designed, and is cheaper, simple and appropriate compenent for single - fiber bidirectional ring networks ( sfbrn ). for the aspect of network, after study the traffic - grooming problem and the cost of wdm ring networks, a layered network with a multi - hubs is presented to reduce the total number of the network ports

    在第三章，我們搭建了一個可以實現多業務單纖雙向傳送的sdh wdm網路平臺，以單根50km光纖作為物理媒質，以mux demux的為單纖雙向復用器件，以sdh wdm為傳輸手段，採用mstp技術，通過接入vlan模塊建成一個單纖雙向傳輸的局域網，並以此為基礎通過接入圖像編解碼器實現單纖雙向視頻傳輸，為城域寬帶接入網的多業務實現提供了範例。
  6. However, because of the use of cic filters in extant asic, it is usually very difficult to meet the requirements of wideband systems

    而當前的數字下變頻器件因為大多採用cic濾波器，很難滿足系統對帶寬的要求。
  7. Characterized by wide band gap, high breakage electric field, high thermal conductivity, high saturated electron mobility, cubic silicon carbide ( 3c - sic ), considered as one of the most promising wide band gap semiconductors, is widely utilized in high temperature, high frequency and large power semiconductor devices

    3c - sic被譽為最有潛力的寬禁帶半導體材料，具有帶隙寬、臨界擊穿電場高、熱導率高、飽和電子漂移速度大等優點，是高溫、高頻、高功率半導體器件的首選材料。
  8. ( 4 ) and co - design methods of ic component structure and foundry process structure designs has been presented in this thesis

    （ 3 ）達到降低高頻集成電路器件的高頻損耗，提高器件q值以及擴寬器件應用頻帶的目的。
  9. Basing on other researchers ’ work, this paper has put forward a novel type of icc ( induced current cancellation ) shielding layer for rfic / mmic performance improvement, to reduce high frequency loss, increase q value, and expand its application frequency range. and present how to realize rfic / mmic components such as i / o pad, inductors, baluns and so on by applying icc shielding layer structures. furthermore co - design methods of ic component structure and foundry process structure designs has been presented in this thesis

    在無線通信技術對cmos射頻/微波集成電路需求的大背景下，本論文提出了用於高頻集成電路（ rfic / mmic ）器件的各類新型icc （ inducedcurrentcancellation ，感應電流相消）屏蔽工藝結構，由此設計製造的ic部件解決了傳統半導體工藝無法實現射頻/微波集成電路的難題，以達到降低高頻集成電路器件的高頻損耗，提高器件q值以及擴寬器件應用頻帶的目的。
  10. Silicon carbide is becoming the most promising semiconductor material for high temperature, high frequency and high power devices because of its superior properties such as wide band gap, high breakdown field, high electronics saturation drift velocity, and high thermal conductivity

    Sic材料由於具有寬禁帶、高臨界擊穿電場、高飽和電子漂移速度、較大的熱導率等優良特性，因此成為製作高溫、高頻、大功率器件的理想半導體材料。
  11. Featured by wide band gap, high breakage electric field, high electron mobility, low dielectric constant, strong irradiation proof and excellent chemical stability, silicon carbide ( sic ), viewed as one of the most promising wide band gap semiconductors, is widely utilized in optoelectronic devices, high frequency and large power, high temperature electronic devices

    被譽為最有潛力的寬禁帶半導體材料一sic ，因其具有禁帶寬度大、擊穿電場高、熱導率大、電子飽和漂移速度高、介電常數小、抗輻射能力強、良好的化學穩定性等優異的特性，被廣泛地應用於光電器件、高頻大功率、高溫電子器件。
  12. In this paper, for 2 ~ 2000mhz broadband rf front - end, using subsection processing fixed intermediate frequency superheterodyne architecture, and combining with the actual component ’ s level, a broadband rf front - end system simulation platform is presented, which provided the universal, standardization, and modularization of transmitter and receiver

    本文針對頻率范圍2 2000mhz的寬帶射頻前端，採用分段處理的固定中頻超外差結構，並結合目前的器件水平，建立了一個通用化、標準化、模塊化的寬頻帶射頻前端發射機和接收機系統模擬平臺。
  13. Since commercial pll ic came out, phase - locked - loop frequency synthesis has become widely accepted. but when narrow frequency - step is required, the loop bandwidth has to decrease while cannot meet the demand of frequency - hopping speed

    數字鎖相集成器件出現以來，鎖相式頻率合成器得到迅速發展，但是當需要窄頻率步進時，環路帶寬需要降低，致使鎖定時間變長，不能滿足快速跳頻的要求。
  14. Generating lfm / nlfm signals whose intermediate frequency is 28mhz and bandwidth is 3mhz and 5mhz and time width is from 6us to 300us based on dds has been discussed in this dissertation. the conclusion is that the wave quality of lfm signal generating through dds is satisfactory and that of nlfm is not perfect

    本文基於器件dds對產生中心頻率為28mhz 、帶寬為3mhz和5mhz 、時寬從6us到300us的不同時寬和帶寬的線性和非線性調頻信號方面進行了探討，得出了dds產生線性調頻信號（ lfm ）的波形質量可取得滿意的結果，但對產生非線性調頻信號（ nlfm ）的波形質量卻存在不足。
  15. For the former has inductance winding and ferromagnetic material, its measurement range is restricted by saturation, so it has a narrower range of frequency. being an inductance, it has the possibility of resonance

    由於電磁式電壓互感器帶有電感線圈和磁性材料，測量范圍受鐵心磁飽和的限制，傳輸頻帶不夠寬；作為感性元件，存在鐵磁諧振的可能，可靠性差。
  16. The hybrid method can simulate accurately both the imaging and polarization - dependent diffraction characteristics of a concave grating. to meet the growing need for flattened passband in a practical wdmsystem, three design methods, namely, the tapered output waveguide structure with air - slots, the three - focal - point method and the analytical method of spatial phase modulation, are introduced to achieve a passband - flattened diffraction grating device

    針對實際光通信應用中對通帶帶寬的需求，本文提出了「結合空氣槽的漸變輸出波導結構方法」 、 「三焦點方法」及「顯式公式空間相位調製法」三種使平面集成型衍射光柵波分復用器件獲得平頂型頻譜響應的優化設計方法。
  17. Pin diode switch is a kind of widely used microwave semiconductor control device. high frequency, broadband, multi through switch are the places where design difficulties lie

    Pin開關是一種廣泛採用的微波半導體控制器件，高頻、寬帶、多擲一直是其設計難點所在。
  18. In this modulator, coplanar strips ( cps ) are used as electrodes for they support balance mode propagation of microwave, and this is a desired merit for common optical modulator. due to the miniaturized dimensions, the metallization thickness is in the order of skin depth and the conductor losses are not negligible

    雖然由於金屬的趨膚效應，電場將集中在金屬表面，但在40g以上的頻率條件下，金屬的厚度和趨膚深度在一個量級，而且此時調制器帶寬受到限制的最大根源來源於金屬電極的微波損耗。
  19. C60, a new type of semiconductor material, has many superior properties, such as wide forbidden band, direct band gap, rapid responding time, high optical damage threshold value and wide responding frequency band etc. these capabilities indicate that c60 film will be used widely in computer, integrate optical instrument and storage device etc. however, the preparation and the purification of c60 material affect the large - scale application at all times

    C _ （ 60 ）薄膜作為新的半導體材料具備許多優越特性，如禁帶寬度大、直接帶隙、快速響應時間、高的光學損傷閥值、較寬的響應頻帶等，這些性能預示了c _ （ 60 ）薄膜在計算機、集成光學器件、光存儲器等方面具有廣闊的應用前景，但c _ （ 60 ）材料的制備與提純還一直是阻礙該新材料投入大規模實際應用的主要因素。
  20. In this paper, difficulties such as the design of hts microwave passive component, the lithography technology, encapsulation and testing at low temperature etc. are solved. a hts delayline with center frequency at 4ghz, bandwidth of 4ghz is manufactured and tested. it ’ s group delay is larger than 10 ns

    本文在解決高溫超導微波無源器件的設計、光刻工藝、密封封裝和低溫測量等難點的同時，對一個f _ 0 （中心頻率）為4ghz ，帶寬4ghz的高溫超導延遲線進行加工、封裝、測量，群時延大於10ns 。
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