延性鈦 的英文怎麼說

中文拼音 [yánxìngtài]
延性鈦 英文
ductile titanium
  • : Ⅰ名詞1 (性格) nature; character; disposition 2 (性能; 性質) property; quality 3 (性別) sex ...
  • : 名詞[化學] (金屬元素) titanium (ti)
  1. The study shows that the flow ability has been greatly improved and its loss has been reduced, while the time of paste hardening has been delayed by adding the high - ti bfs powder

    試驗同時指出,高礦渣的摻入,明顯提高了膠砂流動,減少了流動度的經時損失,緩了水泥凝結時間。
  2. Abstract : based on the ahievement of epitaxial growth in several perovskite oxide films, we discuss the importance of substrate temperature ( ts ) and substrate material in the epitaxial growth of perovskite oxide thin films. influences of ts on growth orientation and epitaxial threshold temperature were observed. the results indicate that during the growth of the oxide films the phase formation and growth dynamics should be taken into consideration. the threshold temperature for epitaxial growth depends on the substrate materials. this demonstrates the influence of substrate material on the initial nucleation and epitaxial growth

    文摘:在成功地外生長超導、鐵電、鐵磁等多種質的鈣礦結構氧化物薄膜的基礎上,討論影響氧化物薄膜外生長的一些因素.考慮到相形成和薄膜生長動力學,在利用脈沖激光淀積法外生長氧化物薄膜中襯底溫度是十分重要的工藝參數.襯底溫度對成相和生長薄膜的取向都有影響.考慮到薄膜是首先在襯底表面成核、成相併生長.因此襯底材料晶格的影響是不容忽視的.觀察到襯底材料對薄膜外生長溫度的影響.在適當的工藝條件下,利用低溫三步法工藝制備得到有很強織構的外薄膜.這突出表明界面層的相互作用對鈣礦結構薄膜的取向有著相當大的影響
  3. In this work, the influences of fabrication process on microstructure, dielectric properties, ferroelectric properties and pyroelectric properties of plt films have been studied. plt films were prepared on the pt ( 111 ) / ti / sio2 / si ( 100 ) substrates by radio frequency magnetron sputtering method and then annealed by rapid thermal annealing process ( rta ) or conventional furnace annealing process ( cfa ). with the help of atom force microscopy ( afm ), x - ray diffraction ( xrd ) and some other apparatus, it was found that : lower substrate temperature ( ts ) was helpful for plt films to form better surface morphologies. with the increase of substrate temperature, the dielectric constant of plt films increased

    Afm 、 xrd以及能測試結果表明:較低的基片溫度有利於形成表面均勻緻密的薄膜,且薄膜的表面粗糙度均方根較小;隨著基片溫度的升高,經過快速退火的plt薄膜的介電常數逐漸增大;相比于傳統退火,快速退火縮短了退火時間,提高了薄膜的介電和鐵電能;快速退火隨著保溫時間的長,大部分鈣礦結構的特徵峰的峰強增大,半高寬減小,峰形越來越尖銳,但當保溫時間為80s的時候, ( 100 )和( 110 )峰的強度有所下降,因此保溫時間在60s較為適宜。
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