弛豫長度 的英文怎麼說

中文拼音 [chíyùzhǎngdù]
弛豫長度 英文
relaxation length
  • 弛 : 動詞1. [書面語] （松開; 鬆懈） relax; loosen; slacken 2. （解除; 免除） fall off; fall out of use
  • 豫 : Ⅰ形容詞[書面語]1 （歡喜; 快樂） pleased 2 （安適） comfort Ⅱ名詞1 （河南的別稱） another name for...
  • 長 : 長Ⅰ形容詞1 （年紀較大） older; elder; senior 2 （排行最大） eldest; oldest Ⅱ名詞（領導人） chief;...
  • 度 : 度動詞[書面語] （推測; 估計） surmise; estimate
  • 長度 : length; longitude; size; extent; footage
  1. By using the multi - configuration dirac - fock ( mcdf ) method, the effects of relaxation and correlation on the transition energies and probabilities of electric - dipole allowed ( el ) resonance and intercombination transitions for 2p53s3 - 2p6 in neutral neon have been systematically studied firstly. and the results of the transition energies and probabilities ( lifetimes ) in length and velocity gauge have been presented. during the calculation, in order to consider the rearrangement effects of the bound - state density and some important correlations, the asfs of transition initial - and final - states were divided according to their angular - momentum and parity and calculated, and different number of csfs were included in the expansion of asfs

    本文利用多組態dirac - fork （ mcdf ）理論方法，通過對輻射躍遷初、末態電子波函數的獨立計算以及在原子態波函數的展開中考慮不同數量的組態波函數，系統地研究了弛豫和相關效應對中性ne原子2p ~ 53s ~ （ 1 . 3 ） p _ 1 ~ o - 2p ~ 6 ~ 1s _ 0電偶極共振和復合躍遷的能量以及躍遷幾率的影響，給出了長度和速度兩種不同規范下激發態的能量和輻射壽命；以中性ne原子的研究為基礎，進一步研究了類ne等電子系列離子（ z = 11 - 18 ）較低的激發組態2p ~ 53s和基組態2p ~ 6的能級結構以及各能級間的輻射躍遷特性。
  2. The modulation bandwidth and the relaxation oscillation frequencies of the laser are quite different at different injection powers and wavelengths

    發現在不同的注入光強度和波長下，激光器的調制帶寬和弛豫振蕩峰頻率會發生變化。
  3. Only when the length of ring cavity is below that value, relaxation oscillation happens, and frsl have good modulation response and large modulation bandwidth

    只有當環形腔長度小於該臨界值時，激光器才發生弛豫振蕩，並具有理想的調制響應和大的調制帶寬。
  4. On the basis of rate equations of frsl, power characteristics and extinction ratio of the converted light are discussed. the relation between relaxation oscillation, small - signal modulation response, modulation bandwidth and the length of fiber ring cavity is analyzed also

    根據frsl滿足的單模速率方程，討論了採用frsl進行波長轉換時轉換光的功率特性和消光比，以及frsl的弛豫振蕩特性、小信號調制響應、調制帶寬與光纖環形腔長度的關系。
  5. Cd1 - xznxte single crystal with good crystallinity has been grown by the descending ampoule with rotation method - before this, high - purity cd1 - xznxte polycrystal materials have been synthesized from 6n gd zn te in the same ampoule. on the basis of this, we deeply explore method of detector fabrication. and we also studied the level and density of traps in detector. gold, indium and c have been deposited as electrodes on polished and chemically etched surfaces of samples with the sizes from 5 5 1 to 10 10 1. 5mm to compare different contact technologies. the behavior of detector ' s leakage current with temperature and leakage current with time were studied as well as th current - voltage characteristics to deduce the level and density of trap in detectors

    我們利用熔體溫度振蕩法在石英安瓿中將6n的單質cd 、 zn 、 te合成多晶原料，用坩鍋旋轉下降法在同一安瓿中生長出尺寸為20 40mm的cd _ （ 1 - x ） zn _ xte晶體。在此基礎上對碲鋅鎘探測器的工藝進行了較深入的研究，製作了厚1 ? 1 . 5mm的探測器，測試了c 、 in 、 au等不同金屬的電極接觸性能，並在國內首次通過測試器件的i ? v 、 i ? t曲線、弛豫特性和電容特性對電阻率、陷阱能級、陷阱濃度進行了分析，同時測得的~ （ 241 ） am源的能譜。
  6. In addtion, the growth rate of low temperature insb buffer layer was 0. 26 m / h, which was obtained by rheed intensity oscillation curves. growth temperature of insb epilayers were investigated with sem and dcxrd, and it was found that the optimum temperature was 440. a 2. 1 m insb layer grown at 440 had an x - ray rocking curve of 412 arcsec, the strain relaxtion was about 99. 02 %

    通過掃描電鏡形貌觀察與能譜分析發現:溫度較低時sb的表面遷移率低，容易在表面堆積;結合x射線雙晶衍射分析，確定高溫insb外延生長的最佳襯底溫度為440 ，該溫度下生長2 . 1 m的樣品x射線半高峰寬為412 ，應變弛豫99 . 02 % 。
  7. Results from various measurement technique show that sige films grown by uhvcvd have higher crystal quality than those by ssmbe and gsmbe. and uhvcvd is proposed to be employed in the further work of our sige - oi fabrication

    從這些測試結果可以得出， uhvcvd方法可以生長的高質量、未弛豫的sige薄膜，而ssmbe和gsmbe生長的sige層都發生了一定程度的弛豫，晶體質量相對較差。
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