晶格形成 的英文怎麼說

中文拼音 [jīnggéxíngchéng]
晶格形成 英文
lattice formation
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 格 : 格象聲詞rattle; gurgle
  • 成 : Ⅰ動詞1 （完成; 成功） accomplish; succeed 2 （成為; 變為） become; turn into 3 （成全） help comp...
  1. The acquired stm images exhibit that tryptophane can form a uniform adsorption layer at room temperature. two kinds of structures were observed : two - dimensional stripe structure and two - dimensional monoclinic lattice

    實驗發現，在室溫下色氨酸分子可以在石墨表面形成均勻的吸附層，並形成二維條狀結構和二維單斜晶格兩種有序結構。
  2. When the thickness increases up to a critical value, about 30 nm, the spotty rheed pattern gradually changes to streaky pattern, and the rheed oscillation curve appears. the rheed pattern of the ultra thin lno film deposited in the relatively high oxygen pressure is streaky pattern. with pumping the oxygen pressure to the relatively low value, the streaky rheed pattern gradually changes to spotty one

    我們發現在較低的真空度下，即氧分壓處於2 10 - 4pa和3 10 - 3pa之間， lno晶格中的一個o2 -將會轉移兩個電子給兩個ni3 + ，並且移動到薄膜表面形成o2被泵抽走，從而導致鈣鈦礦結構的垮塌，其相應的rheed圖樣呈現出清晰而明亮的點，表明表面為較為粗糙的三維島狀結構。
  3. When increasing the oxygen pressure, the rheed pattern changes to streaky one again. this rheed pattern transformation induced by the oxygen pressure is reversible. ex situ xps results indicate that the element ni of lno film deposited in the relatively low oxygen pressure with thickness below the critical value exists in the form as ni2 +, while as ni3 + in the relatively high oxygen pressure

    隨著膜厚增加而超過約30nm的臨界厚度時，越來越多的晶格氧會移動到了薄膜表面，此時所提供的氧將使得后續生長的lno膜層重新形成鈣鈦礦結構，並以層狀方式外延生長。
  4. Again, because the ion influx technique have a little damnification on the skin - deep structure for the cdte thin films, among the experiment, we have let the doped cdte thin films be annealed a hour with n2 atmosphere at 500, and then slowly cooled until the room temperature. via the test and analyse, heat treatment has very important effect on the comeback of crystallattice surface disfigurements. finally, the films were characterized by x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), ultraviolet visible ( uv ) and the hall effect measurement

    再次，由於離子注入會對薄膜表面的結構造成損傷，本實驗把被注入離子的cdte薄膜在n2氣氛中500下退火1個小時，然後緩慢冷卻至室溫。經測試分析，熱處理對晶格表面缺陷的恢復有很重要的作用。最後，利用xrd 、 sem 、紫外可見分光光度計及hall測試系統研究其結構，表面形貌和光電性能。
  5. Commercial resourcesthe highly developed commerce and market are another resources of huzhou, which have initially established its consumer commodity ' s market, production materials market and production factors market that are linked each other and forms a great circulation pattern for all goods

    商貿業繁榮興旺，市場發達，初步形成了消費晶市場、生產資料市場和生產要素市場相互配套的大流通格局。
  6. For the requirement of more negative differential resistance ( ndr ) routes, three split quantized energies are formed in the four - period inp / ingaas superlattice structure with relatively thin ingaas quantum wells under ideal flat - band condition, and high - field domain in the superlattice is formed under sufficiently large operation bias

    為獲得?多軌跡的負微分電阻，本研究組件使用?相當薄之砷化銦鎵?子井，可使四周期磷化銦/砷化銦鎵超晶格結構在平帶情況下形成三個分?的?子化能階，且於足夠大的操作偏壓下在該超晶格結構中形成?高場區域。
  7. Several important tectonic events took place in the chinese continent during the early paleozoic, such as the amalgamation of xiyu plate, forming a unified crystalline basement with the cathaysian plate, development of widespread intraplate deformations in southern yangtze plate, and the occurrence of altay - ergun collision zone

    它們與蘇格蘭阿帕拉契亞的加里東事件完全不同，在中國大陸出現了西域板塊完成拼合，華夏板塊構成統結晶基底，南揚子板塊廣泛發育板內褶皺，此時還形成了阿爾泰額爾古納碰撞帶等重要構造事件，而以中朝和北揚子板塊為代表的其他板塊則主要表現為穩定沉積，地塊運移，並呈離散狀態。
  8. The result showed : the main cause of color change is the formation and annihilation of shallow color centers ; there exist nickel and cobalt ions in the samples ' lattice ; and the impurity ions contribute a lot to the formation of shallow color centers

    結果表明：變色的主要原因是淺色心的產生與湮滅；樣品晶格中存在鎳、鈷離子；雜質離子的存在有利於形成各種淺色心。
  9. Furthermore, reaction thermodynamics, reaction mechanism and forming mechanism of crystal were analyzed. the crystal lattice constants of production were also calculated

    此外，對反應熱力學、反應機制、晶體的形成機理等方面進行了理論分析，並計算了部分產物的晶格常數。
  10. That the alloying element mn and ti substitutes the atom of fe in the rich iron - phase ( al, si, fe ) and resumes the part of the element si in primary phase refines the second phase. at the same time, the volume percentage of second phase is increased. at the course of solidification, the alternating current field changes obviously the microstructure morphology of the al - 20si - 5fe - x alloy and the number of particle eutectic structure is increased

    合金元素mn 、 ti通過占據富鐵相（ al ， si ， fe ）中鐵原子的晶格位置，同時消耗部分初生相中的si元素，形成四元富鐵相（ al ， si ， fe ， mn ） ，細化了合金中的第二相，同時提高第二相體積百分數。
  11. Sodium fluoride destroys metal crystalline grain, forming the small cellular structure, it convenient for membrane imbed among them

    氟化鈉破壞金屬晶格形成微小的蜂窩狀結構，從而便於塗膜嵌入其中，達到增強塗膜附著力的目的。
  12. We measured the samples " electrical properties ( square resistance, square carrier concentration, carrier mobility and hall coefficient ) at room temperature by hall measurement. the experimental results revealed that all the samples are p - type, with increasing the annealing temperature, the carrier mobility increased and the square carrier concentration decreased. these changes in electrical properties are explained by a decrease in the number of mn acceptors because of the forming of mnas phase and the resuming of lattice defects during annealing

    所有樣品均為p型導電類型；發現在650到850溫度范圍內，隨著退火溫度的升高，樣品的方塊載流子濃度呈下降趨勢，而載流子遷移率呈上升趨勢；這是由於在退火過程中，隨著退火溫度的升高，有更多的mn參與mnas相的形成，使得以替位受主形式存在的mn減少，並且晶格缺陷得到恢復所致。
  13. Abstract : based on the ahievement of epitaxial growth in several perovskite oxide films, we discuss the importance of substrate temperature ( ts ) and substrate material in the epitaxial growth of perovskite oxide thin films. influences of ts on growth orientation and epitaxial threshold temperature were observed. the results indicate that during the growth of the oxide films the phase formation and growth dynamics should be taken into consideration. the threshold temperature for epitaxial growth depends on the substrate materials. this demonstrates the influence of substrate material on the initial nucleation and epitaxial growth

    文摘:在成功地外延生長超導、鐵電、鐵磁等多種性質的鈣鈦礦結構氧化物薄膜的基礎上，討論影響氧化物薄膜外延生長的一些因素.考慮到相形成和薄膜生長動力學，在利用脈沖激光淀積法外延生長氧化物薄膜中襯底溫度是十分重要的工藝參數.襯底溫度對成相和生長薄膜的取向都有影響.考慮到薄膜是首先在襯底表面成核、成相併生長.因此襯底材料晶格的影響是不容忽視的.觀察到襯底材料對薄膜外延生長溫度的影響.在適當的工藝條件下，利用低溫三步法工藝制備得到有很強織構的外延薄膜.這突出表明界面層的相互作用對鈣鈦礦結構薄膜的取向有著相當大的影響
  14. The lattice constants were refined using celref program. when implanted c / fe ions ratio is 0. 5 %, the p lattice is expanded, though c atom is much smaller han si. this is probably due to the solid solution in interstitial state

    單胞的間隙位置，形成間隙型固溶體，使晶格膨脹；當摻雜的碳離子含量增加到一定的程度時，趨向于形成置換固溶體，因為碳和硅屬同族元素價態相同，所以碳會置換p 。
  15. On the basis of the two - component soliton vibrator model, the motion of a kink pair consisting of kinks in different sublattices and soliton for the response of the external field are discussed. the mobility of a soliton pair is found

    以二分量孤子的振子模型為基礎，討論了質子子晶格與重離子子晶格中扭結孤子形成的孤子對的運動及其孤子對外場的響應特性，並得到了氫鍵鏈中孤子對的遷移率表達式
  16. Experimental results revealed that the carrier mobility increased with increasing of the annealing temperature, in the range of the annealing temperature from 650 ? to 850 ?, which implied that the crystal lattice structure was damaged by ion implantation and restored after annealing. furthermore, the square carrier concentration decreased, and the square resistance of the samples implanted by mn + and c increased with the raising of annealing temperature. these results indicated that the second phase such as mnga, mnas ferromagnets was formed by more mn + ions with increasing of the ( gaas ) annealing temperature, so the mn + ions which can provide carriers decreased

    由實驗結果可以知道在退火溫度為650 850范圍內，樣品的載流子遷移率隨著退火溫度的提高呈上升趨勢，說明雜質元素的注入對樣品造成晶格損傷，但退火對這些損傷具有修復作用；此外，隨著退火溫度的上升，樣品的方塊載流子濃度不斷下降，加c樣品的方塊電阻不斷上升，這都是因為隨著退火溫度的提高，摻入的mn ~ +離子不再提供載流子，而是形成了mnga 、 mnas等磁性第二相。
  17. For the effects of dimension and surface, the lattice structure, chemical states and the electronic states in the film surface ( interface ) have greatly affected the properties of the films and the practical applies in industries

    由於納米材料的小尺寸效應及表面效應，薄膜表（界）面的晶格結構、化學形態和電子態成為決定薄膜性能的重要因素，而這些因素又直接影響著鈦酸鋇系薄膜的實際應用。
  18. As a result 4 the rising annealing temperature induces si02 phase to form, also ivolves the formation of a si phase. in high - temperature - annealed sio ~, films the excess silicon atoms are present as si - si4 tetrahedra, randomly dispersed in the amorphous si02 matrix. photoluminescent spectra were observed for the samples excided by the laser whose wavelength is 365nm. the pl peak is located at about 445nm, which dose n ' t shift as the annealing temperature changes. as the annealing temperature is raised, the luminescent intensity increases. the phenomena suggest that the si - o - si bond as a defect center which is broken down by the stress at the si nc / si02 interface is the primary source of blue luminescence

    這個陡的界面由於明顯的晶格結構的差別而有較大的應力。界面的形成伴隨著界面發光中心的增加，同時pl強度在l戶800有一個大的增強。這個結果提示我們，界面上h 0 s工鍵斷裂形成的nbohc應是藍光發射的主要原因。
  19. Since the concept of superlattice was proposed, vertical transport in superlattice has been investigated widely. the electric field domains and current self - oscillations which result from sequential resonant tunneling between different subbands of the superlattice are very significant phenomena. such kind of oscillation can be uesd to make tunable microwave oscillaors. in this thesis, low temperature transport problem, especially the formation of field domain and the condition of current self - oscillations in doped gaas / alas superlattice with weak coupling are investigated thoroughly and also by combining the macroscopic model with the microscopic one., the voltage - current characteristic and the current oscillation are simulated. the calculated result is nearly consistent with the experimental data

    由超晶格中子能級之間的順序多阱共振隧穿引起的電場疇及電流自維持振蕩現象是其中的一個非常有意義的分支，該現象可用來製作電壓調諧微波振蕩器。本論文對弱耦合摻雜gaaa alas超晶格中的縱向輸運特別是針對低溫下的場疇的形成和固定偏壓下電流自維持振蕩產生的條件進行了深入的探討，並結合宏觀模型和微觀模型對超晶格在時變電壓作用下的電壓-電流特性以及固定偏壓作用下的電流特性進行了模擬計算。
  20. The study of phase formation of the polycrystalline la1 - xagxmno a series of polycrystalline la1 - xagxmno3 samples with x range nominally from 0. 05 to 0. 45 were investigated, and found that the critical phase temperature has close relation with the content of silver in the sample. and pointed out in the case of agl + doped in lamno3, when x achieved a fixed value ( x = 0. 15 ), ag would separate out, ag - rich phase appeared, samples became compound phase

    並且當銀含量達到一定程度時會有單質銀析出，我們認為這是因為銀離子在溶膠?凝膠的過程中被還原成單質，以銀團簇的形態存在於樣品中，隨著燒結溫度的提高，銀原子逐漸被氧化成銀離子，取代la ~ （ 3 + ） ，進入晶格，形成鈣鈦礦結構。
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