晶體管效應 的英文怎麼說

中文拼音 [jīngtǐguǎnxiàoyīng]
晶體管效應 英文
transistance
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 管 : Ⅰ名詞1 （管子） pipe; tube 2 （吹奏的樂器） wind musical instrument 3 （形狀似管的電器件） valve;...
  • 效 : Ⅰ名詞（效果; 功用） effect; efficiency; result Ⅱ動詞1 （仿效） imitate; follow the example of 2 ...
  • 應 : 應動詞1 （回答） answer; respond to; echo 2 （滿足要求） comply with; grant 3 （順應; 適應） suit...
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  • 效應 : [物理學] effect; action; influence
  1. To achieve the high impedance required specially designed "electrometer" vacuum tubes, field effect transistor must be used in the input stage.

    為適應高阻抗需要，儀器輸入電路中須用特殊設計的靜電計專用電子管、場效應晶體管。
  2. Jfet junction type field effect transistor

    結型場效應晶體管
  3. Fet field effect transistor

    場效應晶體管
  4. Two other effects are transient phenomenon called single event upset ( seu ) and single event latchup ( sel ). in this paper, some means to harden the devices against these phenomena are used. guard banding around nmos and pmos transistors greatly reduces the susceptibility of cmos circuits to lachup

    在本文設計中，採用雙環保護結構，大大的降低了cmos集成電路對單粒子閂鎖效應的敏感性；對nmos管採用環型柵結構代替傳統的雙邊器件結構，消除了輻射感生邊緣寄生晶體管漏電效應；採用附加晶體管的冗餘鎖存結構，減輕了單粒子翻轉效應的影響。
  5. However, in our nation, the research on gan - based microelectronic devices is in the early stage, and a great deal of vestigation is still needed to perform on separative processes of gan devices. due to the lack of algan / gan heterojunction materials in the country, a few researches on algan / gan were made, and the investigation on schottky rectifiers is much less

    在國內， gan基微電子器件的研究剛開始起步，制備gan分立器件的工藝尚處于探索研究階段，特別是受algan gan二維電子氣材料來源的限制，國內algan gan基的場效應晶體管的研究開展得較少，關于肖特基整流二極體的研究更少。
  6. Standard test method for separating an ionizing radiation - induced mosfet threshold voltage shift into components due to oxide trapped holes and interface states using the subthreshold current - voltage characteristics

    利用亞閾值安伏特性測定由於氧化空穴和界面態產生的電離輻射感應金屬氧化物半導體場效應晶體管閾電壓偏移分量的標準試驗方法
  7. Unipolar field effect type transistor

    單極場效應晶體管
  8. Modern voltage references are constructed using the energy - band - gap voltage of integrated transistors, buried zener diodes, and junction field - effect transistors

    現代電壓基準建立於使用集成晶體管和帶狀能隙基準、掩埋齊納二極體和結場效應晶體管。
  9. Interconnection dimensions become the limitation for new performance design while the size traditional transistor has met the demand of challenge. thus, the study of interconnection delay becomes more important for current circuit design and technology

    為了提高ulsi的頻率特性，按比例縮小晶體管的特徵尺寸的努力受到了互連線本徵特性和寄生效應的限制，互連線的rc延遲成為ulsi進一步提高頻率特性的瓶頸。
  10. Discrete semiconductor devices - metal - oxide semiconductor field - effect transistors mosfets for power switching applications

    半導體分立器件.電力開關設備的金屬氧化物半導體場效應晶體管
  11. Mosfets discrete semiconductor devices - part 8 - 4 : metal - oxide - semiconductor field - effect transistors mosfets for power switching applications

    半導體分立器件.第8 - 4部分:電力開關裝置用金屬氧化物半導體場效應晶體管
  12. Placing a thin layer of insulation between the silicon surface and the transistors protects the transistors from " electrical effects, " leading to higher performance and lower power consumption

    在硅表面之間放上很薄的一層絕緣體，可以防止晶體管的「電子效應」 ，這樣可以實現更高的性能和更低的功耗。
  13. Current research of the technique of ga diffusion and the negative resistance effect of open - tube ga - diffusion transistor are emphasized

    重點介紹了目前開管ga擴散工藝的發展現狀和開管擴鐮晶體管負阻效應的研究現狀。
  14. It is found that the height of the metal electrode, the distance between the source and drain electrodes, the thickness of the sio

    研究了場效應納電子晶體管構造過程中金屬電極的結構設計，源-漏電極高度sio
  15. In this paper, they are set forth at first that the kinds of computer - simulation of electronic devices, the development and the requirements of mosfet ' s model and the way of gain the models " parameters, the dc models have been bui it in chapter 2 and the models of big signals have been deduced in chapter 3, they are different from the equivalent circuit models in the traditional software pspice that they come from the numer i ca i - s i mu i at i on wh i ch is based on the essence equat i on, so the precision of simulation is enhanced ? mosfet ' s small signal models of low frequency, intermediate frequency and high frequency have been built in chapter 4 and chapter 5, although the equivalent circuit models in pspice are used for reference to bui id them, they have their own characteristics which are analyzed at a i i kinds of situations, so that the simulation software for mosfet can be written according them and it i s a i so benef i c i a i for us to catch the gen i us character i st i cs of mosfet and to d esign all kinds of applicable devices the correctness of the models is simply proved in chapter 6

    本文首先介紹了電子器件計算機模擬的分類、 mosfet的建模發展動態、對器件模型的要求以及模型參數的提取方法。在第二章中建立了mos晶體管在直流端電壓條件下的工作模型；第三章推導了mosfet的大信號模型，這兩類模型不同於傳統模擬軟體例如pspice中的等效電路模型，而是從模型方程出發，採用數值模擬的方法，提高了模擬的精度。第四章和第五章分別建立了mos晶體管低頻、中頻、高頻的小信號模型，雖然借鑒了pspice模擬軟體中用等效電路模型的方法，但是本文分別討論了準靜態和非準靜態時器件的本徵部分以及包含非本徵部分工作于低頻、中頻和高頻條件時的模型，可以根據這些模型編寫相應的模擬軟體，這樣在做器件的模擬分析與器件設計的時候，就可以利用模擬軟體逐步深入地分析器件在不同的條件下和器件的不同部分在工作時的各種小信號特性，有利於抓住器件工作的本質特性，設計出符合要求的各類通用和特殊器件。
  16. High frequency switching technique is becoming more popular in the power electronics area, the high frequency power transistors are applied in the buck - boost type chopper system. the characteristics of power mosfet and insulated gate bipolar transistors ( igbt ), some new kinds of power swithing devices, are deeply studied

    高頻開關技術是當今電力電子技術發展的方向，本文研究的buck - boost斬波系統中採用了高頻功率器件，所以本文對新型開關器件? ?功率mos場效應管[ mosfet ]和絕緣門極晶體管[ igbt ]的特性進行了初步研究。
  17. Along with silicon ulsi technology has seen an exponential improvement in virtually any figure of merit, as described by moore ’ s law ; the miniaturization of circuit elements down to the nanometer scale has resulted in structures which exhibt novel physical effects due to the emerging quantum mechanical nature of the electrons, the new devices take advantage of quantum mechanical phenomena that emerge on the nanometer scale, including the discreteness of electrons. laws of quantum mechanics and the limitations of fabrication may soon prevent further reduction in the size of today ’ s conventional field effect transistors ( fet ’ s )

    隨著超大規模集成電路的的發展，半導體硅技術非常好地遵循moore定理發展，電子器件的特徵尺寸越來越小;數字集成電路的晶元的集成度越來越高，電子器件由微米級進入納米級，量子效應對器件工作的影響變的越來越重要，尺寸小於10nm將出現一些如庫侖阻塞等新特性。量子效應將抑制傳統晶體管fet繼續按照以前的規律繼續減小。在這種情況下，宏觀的器件理論將被替代，可能需要採用新概念的晶體管結構。
  18. Rapid screening test methods for thermal sensitive parameter of mos field effect transistor

    Mos場效應晶體管熱敏參數快速篩選試驗方法
  19. Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs146

    半導體分立器件. cs146型硅n溝道耗盡型場效應晶體管.詳細規范
  20. " for their researches on semiconductors and their discovery of the transistor effect

    發明晶體管及對晶體管效應的研究
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