晶體管晶元 的英文怎麼說

中文拼音 [jīngtǐguǎnjīngyuán]
晶體管晶元 英文
transistor chip
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 管 : Ⅰ名詞1 （管子） pipe; tube 2 （吹奏的樂器） wind musical instrument 3 （形狀似管的電器件） valve;...
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. In the entitative routing stage, the macro - cell layout must be compressed for optimization area and time delay. it should be compared beauty with the routing result by manual. an algorithm, which is gridless, variable widths and minimizing layer permutation, is advanced for channel region

    晶體管級實體布線階段，由於庫單元的復用性，要求庫單元版圖緊湊，即要求單元版圖在滿足各約束條件的前提下面積、性能優化程度較高，能與手工設計的版圖相媲美。
  2. Specification for harmonized system of quality assessment for electronic components - blank detail specification - ambient rated photocouplers with phototransistor output

    電子元器件質量評定協調體系規范.空白詳細規范.規定環境下有光電晶體管輸出的光電耦合器
  3. Specification for harmonized system of quality assessment for electronic components - blank detail specification - phototransistors, photodarlington transistors, phototransistor arrays

    電子元器件質量評定協調體系.空白詳細規范.光電晶體管光電復合晶體管光電晶體管陣列
  4. In 1948 to be exact, a new device, the transistor, was announced by bell telephone laboratories.

    確切地說，是在1948年，貝爾電話實驗室把一種新的元件晶體管公諸於世。
  5. Then, in 1948 to be exact, a new device, the transistor, was announced by bell telephone laboratories.

    確切地說，是在1948年，「貝爾電話實驗室」把一種新的元件--晶體管公諸於世。
  6. In 1948 to be exact, a new device, the transistor, was announced by bell telephone laboratories

    確切地說，是在1948年，貝爾電話實驗室把一種新的元件? ?晶體管公諸於世。
  7. Then, in 1948 to be exact, a new device, the transistor, was announced by bell telephone laboratories

    確切地說，是在1948年， 「貝爾電話實驗室」把一種新的元件- -晶體管公諸於世。
  8. If you don ' t want a high bandwidth transistor to oscillate place lossy components in at least 2 of the 3 leads. ferrite beads work well

    如果你不想通過在高帶寬晶體管三個引腳中的至少兩個引腳放置損耗元件的方法消除振蕩。鐵氧體磁珠會起到很好的作用。
  9. A transistor memory cell can be made with any number of terminals.

    晶體管存貯單元端點的數量是不受限制的。
  10. Based on the analysis of transistor amplifier noise model, we select devices with low noise in reason. and the method how to reduce phase noise and phase jitter is also discussed

    依據晶體管放大器的噪聲模型分析合理選擇了低噪聲的元器件，對降低相位噪聲和相位抖動的方法作了一些探討。
  11. Wirings of the poly layer are always utilized under the silicon grid technics. to control the macro - cell signal delay and improve signal integrality, the crossing among different nets must be averagely distributed to reduce the number of layer permutation. the metal layer wirings should be maximized and the length of poly layer wiring in each net should be minimized

    硅柵工藝晶體管級布線利用多晶層走線，為了控制宏單元時延性能及改善信號完整性形態，關鍵是不同線網間交叉的均衡分配以減少走線的換層次數，最大化金屬層走線以及每一線網多晶層走線長度的有效控制。
  12. Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da1162

    電子元器件詳細規范. 3da1162型硅npn高頻放大管殼額定的雙極型晶體管
  13. Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da1722

    電子元器件詳細規范. 3da1722型硅npn高頻放大管殼額定的雙極型晶體管
  14. Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da 2688

    電子元器件詳細規范. 3da2688型硅npn高頻放大管殼額定的雙極型晶體管
  15. Specification for harmonized system of quality assessment for electronic components - blank detail specification : case - rated bipolar transistors for high frequency amplification

    電子元器件質量評定協調體系規范.空白詳細規范.高頻放大用管殼額定雙極晶體管
  16. Specification for harmonized system of quality assessment for electronic components - blank detail specification : ambient - rated bipolar transistors for low and high frequency amplification

    電子元器件用質量評估協調體系規范.空白詳細規范.低頻與高頻放大用額定周圍環境的雙極晶體管
  17. Specification for harmonized system of quality assessment for electronic components - semiconductor discrete devices - blank detail specification - case - rated bipolar transistors for high - frequency amplifications

    電子元器件質量評估協調體系.半導體分立器件.空白詳細規范.高頻放大用外殼溫度額定雙極晶體管
  18. First of all, single port negative impedance oscillator is analyzed in the thesis. a design method of gunn diode vco is introduced and an vco chip using gunn diode is fabricated. the substrate of the vco chip is gaas with dimension of 4. 4mmx3. 9mm

    本文首先對單埠負阻振蕩器進行了分析，給出了gunn二極體負阻振蕩器的設計方法，設計出了一個變容管調諧平面微帶gunn二極體vco晶元，該晶元以gaas為襯底，尺寸為4 . 4mm 3 . 9mm 。
  19. Silicon offers the opportunity to build conventional and nanofluidic transistors onto the same chip for computerized control of chemical and biological processing

    硅讓我們有機會將傳統和奈米流體晶體管做在同一張晶元上，藉由計算機控制化學和生物流程。
  20. Detail specification for electronic component. pn silicon unijunction transistors for type bt 37

    電子元器件詳細規范. bt37型pn硅單結晶體管
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