有極晶體 的英文怎麼說

中文拼音 [yǒujíjīngtǐ]
有極晶體 英文
heteropolar crystal
  • 有 : 有副詞[書面語] （表示整數之外再加零數）: 30 有 5 thirty-five; 10 有 5年 fifteen years
  • 極 : i 名詞1 （頂點; 盡頭） the utmost point; extreme 2 （地球的南北兩端; 磁體的兩端; 電源或電器上電流...
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. Blue aragonite is rarely mineral assumed resembling fibers. these aggregation are brightly blue and likes mountain. the form is beautiful and it is of good sight value

    藍文石是一種較少見的礦物晶體.常呈纖維狀產出.該集合體為鮮艷的藍色.纖維結構明顯.造型奇特.具有極高的觀賞和收藏價值
  2. For electrodeposition by dc methods, the metals deposite uninterrupted and the particles were also embeded uninterrupted into the coatings ; for electrodeposition by pc method, the particles with biggish volume were desorbed from the coatings and returned to the electrolyte again owing to the presence of pulse interval ; for electrodeposition by prc method, the particles carried positive charges are much more easy to desorb from the coatings owing to the effecf of reverse pulse current combined with pulse interval, in addition, the reverse pulse current also could dissovle the metals, further accelerates the desorption of particles, thus the particles size embeded in the coatings by prc method is the least

    直流電沉積時，基質金屬的沉積連續進行，粒子在電極表面不間斷嵌入鍍層;單脈沖電沉積由於脈沖間歇的存在使得具有較大體積的粒子會脫附，重新回到溶液中;採用周期換向脈沖時，反向脈沖電流使表面荷正電的較大的粒子更易從電極表面脫附，同時，反向脈沖電流對基質金屬的溶解作用，也會促進粒子的脫附，因此鍍層中復合粒子尺寸最小。隨著鍍層中粒子復合量的增加，三種鍍層的晶粒都明顯細化，說明al _ 2o _ 3的存在阻止了晶粒的長大，提高了電沉積過程中晶核的形成速率。
  3. Every transistor has at least three electrodes.

    每個晶體管至少有三個電極。
  4. The course concentrates on circuits using the bipolar junction transistor, but the techniques that are studied can be equally applied to circuits using jfets, mosfets, mesfets, future exotic devices, or even vacuum tubes

    本課程集中講解使用雙極結晶體管的電路，但所學技術同樣適用於使用jfet ， mosfet ， mesfet ，未來的稀有裝置，甚至真空管的電路。
  5. Even the most optimistic proponents of ics believe that major innovations will be required to reach the ultimate operating limit of the silicon transistor : a length for functional features around 10 nanometers ( nm ), or about 30 atoms long

    即使是最樂觀的ic擁護者也認為，得有重要的創新，才能達到矽電晶體操作的最小尺寸極限：接近10奈米的圖案，或是差不多30個原子的長度。
  6. The determination of human thymidine kinase ( htk ) in human serum, which is a key indicator of cancers can give information for the diagnosis and treatment of the malign diseases. the protein a layer was first self - assembled onto the gold electrode surfaces of quartz crystals, the monoclonal antibodies were then orientedly immobilized through the specific binding between the fc terminals of the antibodies and the self - assembled protein a. with this sensor, the affinity constant of antigen - antibody binding was estimated to be 1. 85 106 l / mol according to the scatchard ’ s plotting method, which proved the high bioactivity of antibody. finally, an amplified piezoelectric immunosensor was designed to determine the htk in

    實驗中將蛋白a吸附於鍍金壓電石英晶體電極表面，用於定向固定htk單克隆抗體，成功研製了檢測htk的壓電石英晶體傳感器，並基於標準scatchard繪圖法，計算出免疫反應的親和常數為1 . 85 106l / mol ，證明該單克隆抗體具有較高的免疫活性;同時基於酶催化沉澱技術，設計了的檢測htk的質量放大壓電石英晶體傳感器，該傳感器可在0 . 1 - 10ng范圍內對htk進行定量檢測，應用此傳感器成功地對5種癌癥病人血清中htk的濃度進行了測定，實驗結果為癌癥的臨床診斷與治療提供了參考。
  7. Sometimes this can be extreme : 13 to 20 diopters ! if performed carefully, a phakic lens implant may be the best and only solution to correct extreme magnitudes of shortsightedness

    對患上極深近視的患者即1 ， 300至2 ， 000度近視，若手術仔細進行， phakic晶體植入可成為最有效的矯視手術。
  8. However, inhering limit from that in the layered and spinel structures, there is no continuous network of feo _ 6 edge - shared octahedral that might contribute to electronic conductivity, resulting in a extremely low electronic conductivity, which has been the greatest obstacle for application of lithium ion phosphate

    然而由於晶體結構的固有限制， lifepo _ 4具有極低的電子導電率，這已成為限制其應用的最大障礙。
  9. 7. all use quartz crystal circuit, so the frequency is very steady

    9 .採用晶體振蕩電路，具有極高的穩定性
  10. Transistors depend critically on a thin insulating layer below the control electrode

    電晶體的品質和控制電極底下的絕緣層有很大的關系。
  11. At present, people usually use birefrigence and quasi - phase - matching methods to achieve higher effiency in the process of conversion. a significant advantage of quasi - phase - matching method is that the interaction is occurred through the largest element of the x ( 2 ) tensor ; the period of optical superlattice can be designed randomly, and any interaction can be matched without walk - off angle ; they are fitted to be used in frequency conversion of lower power especially. the quasi - phase - matching method has some advantages over birefrigence method, improving the efficiency of frequency conversion ; the range of frequency conversion covers its whole transperant wavelength

    由於準相位匹配技術有其獨特的優勢，可以利用非線性光學晶體的最大二階極化張量，如ppln 、 pplt 、 ppktp用的非線性極化張量都是d _ （ 33 ） ，其有效非線性系數高出普通非線性光學介質（如bbo 、 lbo 、 ktp ）一個數量級，而且可以人為靈活設計調制周期，通過周期設計其頻率變換范圍可以覆蓋準相位匹配介質的整個透明波段，選擇無走離效應，解決了常規pm難以解決的問題，拓寬了非線性晶體的應用范圍，極大地提高了頻率轉換效率，已成為非線性光學材料和固體激光器的研究熱點之一。
  12. Current sources are most useful in modeling the behavior of transistors.

    電流源在模擬晶體管特性時極其有用。
  13. Based on many other circuit formats, a new kind of logic - level circuit representation, called unified middle - level circuit format ( umcf ), is defined in this paper, in which some special operations on circuit related with power estimation and low power design. umcf can not only interchange circuits of different formats, but also convert circuits to hspice acceptable files, which can be used for transistor level power estimation

    本文結合多種不同的電路格式，自主定義了一種邏輯級電路的中間表示形式（稱為umcf ）和一系列極具特色的與低功耗技術相關的操作，它不但可以實現與其他多種電路格式之間的相互轉換，還可以將電路直接轉換成hspice可以接受的文件，進行晶體管級的電路功耗估計，這樣可以在公認的高精度的功耗模擬器上，對本文的結果進行有效的驗證。
  14. It has a broader absorption band at 808 nm which is emitted by laser diode ( ld ). therefore, nd : cngg is suitable for ld pumping, the ld pumped all solid - state lasers can be made by using nd : cngg. in this study, nd : cngg single crystals of 25mm in diameter and above 80mm in length were successfully grown by the automatically pulling method from the melt

    摻釹鈣鈮鎵石榴石（簡稱nd : cngg ）是一種新型激光晶體，該晶體熔點低（ 1470 ） ，具有無序結構，在通用的808nm半導體激光二極體（ ld ）發射波長區有寬吸收帶，因此很適合ld泵浦，可做成ld泵浦全固態激光器。
  15. General model c38 dc meters are portable taut - band suspended moving coil instruments with light - spot indication. the meters have the feature of extremely high in sensitity and small in consumpition being particularly suitable to be used for measuring weak electric quantity on dc circututs, also for testing the static paramenters of transistors as well for measuring the output of millivolt values of zhermocouple in the vacuun furnaces ( or hydrogen furnaces )

    C38型直流電表是磁電系張絲支承光點指示可攜式電表儀表具有極高的靈敏度，功耗小，特別適合弱電量直流電路測量及晶體管靜態參數測試用以及用做真空爐（或氧氣爐）中測量熱電偶的輸出毫伏值
  16. Srtio _ 3 ( sto ) thin films exhibit a large electric field dependence of dielectric permittivity. the microwave surface resistance of yba2cu3o7 - x ( ybco ) is much lower than that of the normal conductor. the typical value of rs for ybco epitaxial thin film is smaller than 1 m

    在低溫下， srtio _ 3 （簡寫為sto ）薄膜具有強烈的非線性介電性質，即:介電常數隨外加直流電場變化而變化; yba2cu3o7 - x （簡寫為ybco ）具有極低的微波表面電阻， rs （ 10ghz ， 77k ） < 1m ，而且它們的晶體結構相似，晶格常數匹配以及化學性質相容。
  17. Objective : construct effective mathematic model to analyse the piezoelectric frequency data of pt test based on the theoretic analysis of viscosity and density changes in coagulation reaction system and discuss the feasibility of detecting patients ’ samples in clinic, on the

    方法: 1 .選用基頻為10mhz的at切型銀膜電極石英晶體傳感器構建螺旋式檢測池，使不同檢測池具有同質性。在傳感器上下各墊加一o形硅膠密封圈，並置於金屬基座上。
  18. We ' ve seen already how maintaining a constant base current through an active transistor results in the regulation of collector current, according to the ratio

    我們已經看到有源晶體管的恆定的基極電流是如何以系數控制集電極電流的。
  19. The results show that enhanced low - dose - rate sensitivity ( eldrs ) exists in both domestic and imported bipolar transistors, and the npn transistors are more obvious than pnp transistors

    結果表明：在輻照的劑量率范圍內，無論是國產還是進口的雙極晶體管，都有明顯的低劑量率輻照損傷增強現象，且npn管比pnp管明顯。
  20. It has been shown that the performance of sige heterojunction bipolar transistor ( sige hbt ) in high frequency is much better than that of si bipolar junction transistor ( si bjt ), and is better than that of algaas / gaas metal semiconductor field effect transistor ( algaas / gaas mesfet ) in some aspects

    Sige異質結雙極晶體管（ sigehbt ）的高頻性能大大優于si雙極晶體管（ sibjt ） ，並在某些方面優于algaas / gaasmesfet ，所以sigehbt具有廣闊的應用前景。
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