有源區 的英文怎麼說

中文拼音 [yǒuyuánqū]
有源區 英文
active area
  • 有 : 有副詞[書面語] （表示整數之外再加零數）: 30 有 5 thirty-five; 10 有 5年 fifteen years
  • 源 : 名詞1. （水流起頭的地方） source （of a river）; fountainhead 2. （來源） source; cause 3. （姓氏） a surname
  • 區 : 區名詞（姓氏） a surname
  • 有源 : [電學] active有源電路 active circuit; 有源器件 active device; 有源天線 active antenna; 有源衛星 active satellite
  1. Study on growth and luminescence properties of the blue led ingan active layer

    有源區的制備及其發光特性研究
  2. The bandgap is found to broaden with increasing dopant concentration, and it is found that doping with al has the effect of shifting the optical absorption to the shorter wavelength, with both cases being attributed to the burstein - moss shift. we report a study on the fabrication and characterization of ultraviolet photodetectors based on zno : al films. using sol - gel technique, highly c - axis oriented zno films with 5 mol. %

    為了研究zno : al薄膜在紫外光探測方面的性能，我們採用溶膠-凝膠旋塗法在si襯底上生長出具有高度c軸取向的zno : al薄膜，摻al濃度為5mol . % ，並以此作為有源區成功制備出了au / zno : al / au光電導型紫外探測器的原型器件，並對其i - v特性、紫外光響應和光致發光等方面的性能進行了研究。
  3. Gth is the active region gain required to offset losses in the regions exterior to the active region.

    Gth是為了補償在有源區以外的區域中的損失所要求的有源區增益。
  4. The coefficient transition in quantum well is larger than that in bulk material

    3對led器件多量子阱有源區載流子輸運與復合躍遷的分析。
  5. Gth is the active region gain required to offset losses in the regions exterior to the active region

    Gth是為了補償在有源區以外的區域中的損失所要求的有源區增益。
  6. When the number of the active region is added, the thermal properties of the novel laser become bad. it must be improved. 3

    新型多有源區結構的激光器隨有源區數目的增加，散熱性能變差，其熱特性有待進一步提高和改善。
  7. In ld aspect, reduction or increase of the active region thickness can reduce the aspect ratio of the ld beam and consequently improve the beam ’ s symmetry

    在ld方面，減小或增加有源區的厚度，都可以減小激射光束的縱橫比，改善ld光束的對稱性。
  8. At last, through calculation we get the two dimensional temperature distribution of the chip and the submount of a high power laser diode array, which are consistent with the test data

    最後，通過實驗測定激光器陣列有源區的溫升，得到與理論計算基本一致的實驗數據，並且對溫度的數值計算做了進一步的討論。
  9. High leakage currents and soft reverse current - voltage characteristics are some of the detrimental effects produced by the metal atoms dissolved in the silicon matrix. gettering procedures can reduce metal contamination

    由於金屬雜質原子擴散並沉積在器件的有源區，會造成諸如：反向漏電流較大，反向擊穿電壓是軟擊穿等有害的影響。
  10. The high efficiency and high power semiconductor laser with multi - active regions, which are cascaded by reverse biased tunnel junction ( s ) can resolve the problems in theory and overcome these shortcomings

    通過反向偏置隧道結將多個有源區再生耦合級聯起來的新型高效大功率半導體激光器從理論和實踐上解決了傳統激光器存在的上述問題。
  11. A novel polarization - insensitive semiconductor optical amplifier ( pisoa ) with graded strain bulk - like active structure has been designed and fabricated. we have analyzed their polarization insensitivity characteristics from the point of theory

    與中科院半導體所張瑞英博士等人一起，首次在國際上提出了用漸變應變結構作為半導體光放大器的有源區的研製工作。
  12. In order to measure the characteristics of such semiconductor optical amplifier, we adopted a set of measurement system. this measurement system can be used to measure the characteristics of all kinds of active or inactive optical passive components. such device presents good polarization insensitivity ( < 0. 9db ), wide 3db bandwidth ( > 33nm ) at 0 - 200ma and different input signal light wavelength and power, the maximum fiber - to - fiber gain of 10db, lossless operation current of 50 - 75ma for different input signal light wavelength and power, large extinction ratio ( > 50db ) and lower noise figure ( nf ) ( < 8db )

    與張瑞英博士一起，首次利用該種有源區結構制備出偏振不靈敏半導體光放大器，並在0 - 200ma注入電流范圍內獲得33nm的3db帶寬，在不同信號波長，不同信號功率0 - 200ma的注入電流范圍內，偏振相關損耗均《 0 . 9db ，在耦合差損為7db / facet的條件下，最大fiber - to - fiher增益達10db ，無損操作電流為50 - 70ma ，消光比達50db以上，而噪聲指數則低於8db ，最小可達4 . 6db 。
  13. The heat sources are analyzed in theory and calculated under some hypothesis. a thermal conductive model is built and by solving the model equation, the numerical values of the 1 - active region laser, 2 - active region laser, 3 - active region laser and 4 - active region laser are obtained. the dynamical temperature distribution plots are obtained, too

    在一定的假定條件下對其內部的熱產生率進行了定量計算，並分別針對一、二、三、四有源區激光器建立了熱傳導模型，得出數值解，畫出激光器內部瞬態溫度分布圖，推導了激光器連續工作條件。
  14. In optical fiber aspect, the incident beam can be collimated, converted and focused by some kinds of lenses, making the mode of incident beam matched with or near the optical fiber ’ s modes. in this thesis, thorough theoretical analyses and experimental investigations were made for the external optical properties of a 980nm high - power tunnel junction regenerated multi - active - region quantum well stripe - geometry algaas / gaas / ingaas ld and three different stripe - width 980nm high - power

    本論文圍繞本實驗室研發的新型隧道再生多有源區980nmalgaas / gaas / ingaas量子阱大功率半導體激光器和多種條寬的單有源區980nmalgaas / gaas / ingaas量子阱大功率半導體激光器的光場外特性、單模階躍折射率光纖和多模漸變折射率光纖的模場特性進行了深入的理論分析和實驗研究。
  15. There are many approaches to achieve the purpose, and one of the perfect them is tunnel - cascaded multi - active regions large cavity ld structure, in which not only the effective thickness of the active region increase but also obtain lds ’ low threshold current and high slope efficiency and other properties

    有多種途徑實現ld光束特性的改善，其中採用多有源區隧道結級聯大光腔結構的半導體激光器是既增加有源區等效厚度而又保證ld低閾值電流和高斜率效率等特性的最佳途徑之一。
  16. 4 design of hb - led is focused on mqws and top layer. compensatory mqws for led active layers have led to good results follow the analysis in former two chapters. systematic analysis of current injection and light output via external quantum efficiency of hb - led showed mat the optimum of top layer of hb - led is appeared to be between 15 u m and 20 u m, and at least is 5 u m

    根據前兩章的分析設計出補償應變多量子阱的有源區結構；然後分析計算了器件的電注入和光輸出過程，指出降低頂層的電阻率和增加頂層厚度都可以使注入電流更有效地擴展到上電極外面的區域，增加厚度還可以增加器件的側面出光。
  17. With numerical calculations, the influences of device structure, material parameters and operating conditions on the distributions of the equipotential line, current density, carrier concentration, optical field and temperature profiles have been investigated, and the interactions between the correlative characteristics have been studied at the same time

    通過對這些相互關聯的特性進行數值計算，分析了器件結構、材料參數和工作條件等對等勢線分佈、注入有源區的電流密度、有源區中的載流子濃度、光場強度以及溫度分佈的影響，並研究了這些特性之間的相互影響。
  18. Many gettering techniques have been widely studied to overcome this problem by removing metal impurities from active regions of device. one new gettering method that has recently received growing interest is the use of nanocavities resulting from helium or hydrogen implantation

    所以需要減小有源區中金屬雜質的濃度，通常採用吸除的方法把金屬雜質從器件有源區吸收到有源區之外預先形成的sink （陷阱）中。
  19. Metal impurities unintentionally introduced into si wafers during various device process steps are very harmful to device performances. many gettering techniques have been widely studied to overcome these problems by removing metal impurities from the active region of a device. reduction in device size and introduction of new moralization processes require more efficient gettering techniques working at lower temperatures

    半導體工藝中無意引入的金屬雜質的污染會極大損害器件性能，為了將金屬雜質從器件的有源區吸除，吸雜技術被廣泛的研究，器件尺寸的不斷縮小和新的金屬化工藝的不斷出現更需要能在低溫有效吸除的技術。
  20. The effect of a few important geometrical and physical parameters which include the length of the active region, the thickness of the active region, bulk traps, interface traps, on the tft ( thin film transistor ) characteristics of polycrystalline silicon has been investigated by using advanced two dimensional device simulation program medici

    摘要利用高級二維器件模擬程序medici分析了多晶矽薄膜晶體管有源區的長度、體內陷阱、界面陷阱、柵氧化層厚度等幾何參數及物理參數，並研究了這些參數對薄膜晶體管特性的影響。
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