柵漏 的英文怎麼說

中文拼音 [zhàlóu]
柵漏 英文
[電學] grid leak; gate drain柵漏電流 gate leak current; gate leakage current
  • 柵 : 柵名詞（柵欄） railings; paling; palisade; bars
  • 漏 : Ⅰ動詞1 （從孔或縫中滴下、透出或掉出） leak; drip 2 （泄漏） divulge; disclose; leak 3 （遺漏） le...
  1. Two other effects are transient phenomenon called single event upset ( seu ) and single event latchup ( sel ). in this paper, some means to harden the devices against these phenomena are used. guard banding around nmos and pmos transistors greatly reduces the susceptibility of cmos circuits to lachup

    在本文設計中，採用雙環保護結構，大大的降低了cmos集成電路對單粒子閂鎖效應的敏感性；對nmos管採用環型柵結構代替傳統的雙邊器件結構，消除了輻射感生邊緣寄生晶體管漏電效應；採用附加晶體管的冗餘鎖存結構，減輕了單粒子翻轉效應的影響。
  2. A model of the interface state density distribution near by valence band is presented, and the dependence of the threshold voltage on temperature, the c - v characteristics and the subthreshold characteristics are predicted exactly with this model ; the effects of s / d series resistance on the output characteristics, transfer characteristics and effective mobility of sic pmosfets are analyzed. thirdly, the output characteristics and the drain breakdown characteristics are modeled with the procedure medici. the output characteristics in the room temperature and 300 ? are simulated, and the effects of gate voltage. contact resistance, interface state and other factors on sic pmos drain breakdown characteristics are analyzed

    提出了一個價帶附近的界面態分佈模型，用該模型較好地描述了sicpmos器件閾值電壓隨溫度的變化關系、 c - v特性曲線以及亞閾特性曲線；分析了源漏寄生電阻對sicpmos器件輸出特性、轉移特性以及有效遷移率的影響；論文中用模擬軟體medici模擬了sicpmos器件的輸出特性和漏擊穿特性，分別模擬了室溫下和300時sicpmos器件的輸出特性，分析了柵電壓、接觸電阻、界面態以及其他因素對sicpmos擊穿特性的影響。
  3. Because massive harmonic interference in the electrical network, it causes signal - sampling to include the very big harmonic in the measurement system, for eliminating measurement result influence by harmonic, the paper has an in - depth study of fourier transformation harmonics analysis measurement principle, analysis the forming reasons of frequency spectrum leakage and railing effect during measurement, achieves phase locked loop and frequency multiplier technique to realize integer - period synchronous sampling and eliminate impact of frequency spectrum leakage and railing effect in the result of measurement, and investigates in depth theory on phase locked loop and frequency multiplier technique, gives the method of realizing phase locked loop and frequency multiplier technique

    由於電網中存在大量的諧波干擾，導致測量系統中取樣信號也含有很大的諧波，為了消除諧波對測量結果的影響，論文深入研究了傅立葉變換諧波分析法的測量原理，分析了測量中頻譜泄漏和柵欄效應形成的原因，提出了採用鎖相環倍頻技術實現信號的整周期同步采樣，消除頻譜泄漏和柵欄效應對測量結果的影響，並對鎖相環倍頻技術的理論進行了深入研究，給出鎖相環倍頻技術的實現方法。
  4. Compared to other commonly referenced high - k materials, hfo2 is known for its stability on silicon and process compatibility. the fabrication and electrical properties of hfo2 and hfoxny gate are carefully studied. with the study on hfo2. we can receive a few significative conclusion : 1

    結果表明，與傳統的hf清洗的si表面相比， nh _ 4f清洗的si表面與hfo _ 2具有更好的熱力學穩定性，因而可獲得更低的eot和柵泄漏電流密度； 3 ）研究了濺射氣氛和退火工藝對hfo _ 2柵介質薄膜性質的影響。
  5. These problems boost the study of high - k materials as the alternatives of sio2 gate dielectrics. among all high - k gate dielectric materials, hafnium oxide ( hfo2 ) is being extensively investigated as one of the most promising candidate materials due to its superior thermal stability with poly - si, biggish constant and reasonable band alignment. our researches focus on hfo2 dielectrics

    高k柵介質材料已經被廣泛地研究來替代sio _ 2 ，以降低柵泄漏電流和改善可靠性，其中， hfo _ 2由於其較大的介電常數、較大的禁帶寬度、與si的導帶和價帶較大的偏置、以及與si的高的熱力學穩定性等特徵，被認為是最有希望的替代sio _ 2的柵介質材料之一。
  6. Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet

    基於能量輸運模型對由凹槽深度改變引起的負結深的變化對深亞微米槽柵pmosfet性能的影響進行了分析，對所得結果從器件內部物理機制上進行了討論，最後與由漏源結深變化導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深（凹槽深度）的增大，槽柵器件的閾值電壓升高，亞閾斜率退化，漏極驅動能力減弱，器件短溝道效應的抑制更為有效，抗熱載流子性能的提高較大，且器件的漏極驅動能力的退化要比改變結深小.因此，改變槽深加大負結深更有利於器件性能的提高
  7. With the continued scaling - down of mosfet, the ultra - thin gate oxide causes some serious problems of devices. the ultra - thin sio2 dielectrics cause significant leakage current, consequently increases standby power of device. meanwhile, the reliability of gate dielectrics is also degraded

    當mosfet器件按比例縮小到70nm尺寸以下時，傳統的sio _ 2柵介質的厚度將需要在1 . 5nm以下，如此薄的sio _ 2層產生的柵泄漏電流會由於顯著的量子直接隧穿效應而變得不可接受，器件可靠性也成為一個嚴重的問題。
  8. In gan hemt drain pulse current collapse experiments, drain current under pulse condition collapsed about 50 % than direct current condition and the pulse signal frequency affected little on current collapse. when gate voltage is small, the relationship between pulse width and drain current is i0 ( + t / 16 )

    在ganhemt漏極脈沖電流崩塌測試中，發現脈沖條件下漏極電流比直流時減小大約50 % ;脈沖信號頻率對電流崩塌效應影響較小;當柵壓較小時，隨著脈沖寬度的改變漏極電流按i0 （ + t / 16 ）的規律變化。
  9. It is shown that neglecting the gate - drain capacitance of the mosfet would lead to an overestimation of the optimum device width in the cmos source degenerated lna

    本文證明了在cmos源端degeneration結構的低噪聲放大器中，忽略場效應管的柵漏電容將造成對放大管的最優柵寬估計過大。
  10. Common - gate drain source connection

    共柵漏源連接
  11. Under pulse condition, charging and discharging of surface states between gate and drain induce gan hemt current collapse

    脈沖條件下， ganhemt電流崩塌效應主要由柵漏之間表面態充放電引起。
  12. The main work of this thesis analyzes the organic static induction transistor ' s operational mechanism, and researchs the change of gate length, change of gate - drain distance and change of electric channel breadth for operational characteristics influence of organic static induction transistor

    本論文的主要工作是解析有機靜電感應三極體的工作機理，並研究了柵極長度變化、柵漏極間距變化和導電溝道的寬度變化對有機靜電感應三極體工作特性的影響。
  13. It is believed that p - si tft will be the main type in the future panel display. among the process of manufacture p - si tft, the source and drain will have the superposition with grid for the reason of machine ’ s alignment error. the superposition will bring superposition capacitance and it will badly cut down the electric performance

    在制備多晶硅tft時，由於機器的套準誤差會在柵極與源、漏極之間產生重疊部分，這樣就造成了柵源、柵漏之間的交疊電容，交疊電容的存在嚴重影響了多晶硅tft的性能，而利用自對準工藝制備的多晶硅tft則避免了交疊電容的產生。
  14. In this paper, the theory of negatively charged surface states is used to investigate dynamic breakdown characteristics and the increase of gate - drain breakdown voltage as well as the reduction of saturated drain - source current after sulfur passivation. the measure which can improve the stability of sulfur passivation is proposed

    本論文通過對gaasmesfet擊穿機理和硫鈍化機理的研究，用負電荷表面態理論，解釋了gaasmesfet動態擊穿特性及硫鈍化后柵漏擊穿電壓增大、源漏飽和電流減小的機理，提出了改善硫鈍化穩定性的措施。
  15. Leaky wave antennas with specific profiles are analyzed and their radiation properties are compared ; the conclusions based on the present analysis are of practical significance for the design of these kinds of leaky wave antennas

    文中選取了幾種介質柵形狀漏波天線進行研究，並對它們的輻射特性進行了比較分析；所得結論對該類全向漏波天線的設計具有實際意義。
  16. After researching the part thermal equipments and systems include heaters, steam leakage and receiving systems, low pressure drain system etc, and computing the efficiency of the systems, find out the better choice of the imported assemblies than the domestic assemblies in parameter and the disfigurements in design and making. based on the above, point out the measure to progress them. according to the analysis, we can get some measures to increase the economical level of the systems and save more energy

    對局部熱力設備及熱力系統進行分析研究，包括:加熱器設備、漏汽及回收系統、低加疏水系統、主、再熱蒸汽系統以及凝汽器等部位；並計算汽輪機本體高、中、低壓缸效率，藉此著重對汽輪機通流部分進行了剖析，找出國外進口機組動、靜葉柵、葉型的選擇比國產機組先進性以及國產機組在通流部分設計和製造中的諸多缺陷，並且指出了改進的方向，為機組提高熱經濟性、節能降耗奠定了理論基礎。
  17. In gan hemt gate pulse experiments, drain current under pulse conditon collapsed about 47 % than direct current condition and the pulse width affected little on current collapse. the relationship between drain current and pulse frequency is ncoxw [ m + ( n + k ? ) vgs + ( n + k ? ) vgs2 ] ( vgs - vth ) 2 / l

    在ganhemt柵極脈沖電流崩塌測試中，觀察到柵脈沖條件下漏極電流比直流情況下減小了47 % ;隨著信號頻率的改變，漏極電流按ncoxw [ m + （ n + k
  18. Leaky grid detector

    柵漏檢波器
  19. The lna with source inductor degeneration is analyzed in detail, which is used most widely in current. base on the analysis, a cascode structure is presented to minimize the effect of gate - drain capacitance cgd

    針對目前lna中應用最廣泛的源極電感負反饋結構，進行了詳細分析，在此基礎上對該結構做出了優化，採用共源共柵級聯結構，減小了柵漏電容cgd的影響。
  20. In this thesis, emphasizes are attached on the researches of selecting and making the sensor ' s sensitive material and determining optimal size of sensitive material, and of designing sensing heads and mensurating sensing head ' s performance

    近年來，光纖光柵漏油傳感器及其敏感材料的研究受到了人們的極大關注。本論文重點對漏油傳感器敏感材料的選擇、制備以及最佳尺寸進行了研究；對傳感頭進行了設計和性能測試。
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