樣品制備問題 的英文怎麼說

中文拼音 [yàngpǐnzhìbèiwèntí]
樣品制備問題 英文
sample preparation problems
  • 樣 : Ⅰ名詞1. （形狀） appearance; shape 2. （樣品） sample; model; pattern Ⅱ量詞（表示事物的種類） kind; type
  • 品 : Ⅰ名詞1 （物品） article; product 2 （等級; 品級） grade; class; rank 3 （品質） character; qualit...
  • 制 : Ⅰ動詞1 （製造） make; manufacture 2 （擬訂; 規定） draw up; establish 3 （用強力約束; 限定; 管束...
  • 備 : Ⅰ動詞1 （具備; 具有） have; be equipped with 2 （準備） prepare; provide with; get ready 3 （防備...
  • 問 : Ⅰ動詞1 （請人解答） ask; inquire 2 （詢問; 慰問） question; ask about [after]; inquire about [aft...
  • 題 : Ⅰ名詞1. （題目） subject; title; topic; problem 2. （姓氏） a surname Ⅱ動詞（寫上） inscribe; write
  • 樣品 : sample; specimen; prototype; exponent
  • 問題 : 1 （需回答的題目） question; problem 2 （需研究解決的矛盾等） problem; matter 3 （事故或意外） tr...
  1. Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment

    Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sige
  2. This paper has first summarized the experiment of granular film and theoretical research progress and the present major problem to be solved, has discussed the purpose meaning of this paper on this foundation, has introduced us soon afterwards with magnetic metal - non - magnetic metal material adopt for studying object to co - vapored deposited system such as the fexcu1 - x of different fe content x granular film sample, carrying out annealing handling for some of samples, using x ray diffraction instrument xrd ), scanning electrical microscopic ( sem ), vibrating sample magnetometer ( vsm ) the tiny structure for sample, appearance and the magnetic result that can carry out detection

    本文首先綜述了顆粒膜的實驗和理論研究進展情況和目前待解決的主要問題，在此基礎上論述了本文的目的意義，隨后介紹了我們以磁性金屬?非磁性金屬材料為研究對象，採用共蒸發法制備不同fe含量x的fe _ xcu _ （ 1 - x ） ，顆粒膜樣品，對部分樣品進行退火處理。給出了用x射線衍射儀（ xrd ） 、掃描電鏡（ sem ） 、振動樣品磁強計（ vsm ）對樣品的微結構、形貌及磁性能進行檢測的結果。
  3. According to the author ' s experience this paper presents the main problems which should be regarded in laboratory soil tests, including sample preparation, the oven temperature selection in water content test, level consolidation test, direct shearing test and so on

    摘要根據作者長期從事土工試驗的經驗，闡述了在室內土工試驗時，樣品制備、含水率試驗烘箱溫度選擇、水平固結試驗和直接剪切試驗中應該注意的問題。
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