氧等離子體 的英文怎麼說

中文拼音 [yǎngděnglízitǐ]
氧等離子體 英文
oxygen plasma
  • 氧 : 名詞[化學] （氣體元素） oxygen （o）
  • 等 : Ⅰ量詞1 （等級） class; grade; rank 2 （種; 類） kind; sort; type Ⅱ形容詞（程度或數量上相同） equa...
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 體 : 體構詞成分。
  • 離子 : [物理學] ion
  1. Determination of cao, mgo, sio2, fe2o3, tio2 in alundum powder by icp - aes

    剛玉粉中氧化鈣氧化鎂二氧化硅三氧化二鐵二氧化鈦的電感耦合高頻等離子體發射光譜法測定
  2. 4 the cleanout and the passivation of si surface was carried out by a two - step process to overcome the surface oxide layer and balance the charge between the substrate and epitaxy. by this way, the crystal quality and emission characteristic of zno thin films can be improved, which provide a way to resolve the native oxide layer of si substrate

    4 、通過用等離子體對硅襯底表面進行清洗和鈍化兩步處理，解決硅襯底表面的氧化層和界面電荷平衡問題，制備出了高質量的氧化鋅薄膜材料，找到了一條獲得了高質量的氧化鋅薄膜的新途徑。
  3. When an oxidizing plasma is run in a system coated with fluorocarbon film, a substantial quantity of f atoms is released in the plasma.

    當氧氣等離子體在覆蓋有氟碳薄膜的系統中起輝時，就會有相當數量的F原子在等離子體中釋放。
  4. 6 the zn3n2 is prepared on focus glass substrate at low temperature. and for the first time, a p - zno with a carrier density of 1017 ? cm - 3 is obtained by thermal zn3n2 in an oxygen ambient

    5 、用等離子體增強的化學汽相沉積的方法制備了zn3n2薄膜，首次通過熱氧化zn3n2的方法，制備出了受主型載流子濃度為1017cm - 3的p - zno薄膜。
  5. Gadolinium - determination of lanthanum oxide, cerium oxide, praseodymium oxide, neodymium oxide, samarium oxide, europium oxide, terbium oxide, dysprosium oxide, holmium oxide, erbium oxide, thulium oxide, ytterbium oxide, lutetium oxide and yttrium oxide contents

    電感耦合等離子體發射光譜法測定氧化釓中氧化鑭氧化鈰氧化鐠氧化釹氧化釤氧化銪氧化鋱氧化鏑氧化鈥氧化鉺氧化銩氧化鐿氧化鑥和氧化釔量
  6. Holmium oxide - determination of lanthanum oxide, cerium oxide, praseodymium oxide, neodymium oxide, samarium oxide, europium oxide, gadolinium oxide terbium oxide, dysprosium oxide, erbium oxide, thulium oxide, ytterbium oxide, lutetium oxide and yttrium oxide cont

    電感耦合等離子體發射光譜法測定氧化鈥中氧化鑭氧化鈰氧化鐠氧化釹氧化釤氧化銪氧化釓氧化鋱氧化鏑氧化鉺氧化銩氧化鐿氧化鑥和氧化釔量
  7. Samarium oxide - determination of lanthanum oxide, cerium oxide, praseodymium oxide, neodymium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, holmium oxide, erbium oxide, thulium oxide, ytterbium oxide, lutetium oxide and yttrium oxide cont

    電感耦合等離子體發射光譜法測定氧化釤中氧化鑭氧化鈰氧化鐠氧化釹氧化銪氧化釓氧化鋱氧化鏑氧化鈥氧化鉺氧化銩氧化鐿氧化鑥和氧化釔量
  8. Praseodymium oxide - determination of lanthanum oxide, cerium oxide, neodymium oxide, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, holmium oxide, erbium oxide, thulium oxide, ytterbium oxide, lutetium oxide and yttrium oxide con

    電感耦合等離子體發射光譜法測定氧化鐠中氧化鑭氧化鈰氧化釹氧化釤氧化銪氧化釓氧化鋱氧化鏑氧化鈥氧化鉺氧化銩氧化鐿氧化鑥和氧化釔量
  9. Neodynium oxide - determination of lanthanum oxide, cerium oxide, praseodymium oxide, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, holmium oxide, erbium oxide, thulium oxide, ytterbium oxide, lutetium oxide and yttrium oxide cont

    電感耦合等離子體發射光譜法測定氧化釹中氧化鑭氧化鈰氧化鐠氧化釤氧化銪氧化釓氧化鋱氧化鏑氧化鈥氧化鉺氧化銩氧化鐿氧化鑥和氧化釔量
  10. Lanthanum oxide - determination of cerium oxide, praseodymium oxide, neodymium oxide, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, holmium oxide, erbium oxide, thulium oxide, ytterbium oxide, lutetium oxide and yttrium

    電感耦合等離子體發射光譜法測定氧化鑭中氧化鈰氧化鐠氧化釹氧化釤氧化銪氧化釓氧化鋱氧化鏑氧化鈥氧化鉺氧化銩氧化鐿氧化鑥和氧化釔量
  11. Terbium oxide - determination of lanthanum oxide, cerium oxide, praseodymium oxide, neodymium oxide, samarium oxide, europium oxide, gadolinium oxide, dysprosium oxide, holmium oxide, erbium oxide, thulium oxide, ytterbium oxide, lutetium oxide and yttrium oxide cont

    電感耦合等離子體發射光譜法測定氧化鋱中氧化鑭氧化鈰氧化鐠氧化釹氧化釤氧化銪氧化釓氧化鏑氧化鈥氧化鉺氧化銩氧化鐿氧化鑥和氧化釔量
  12. Cerium oxide - determination of lanthanum oxide, praseodymium oxide, neodymium oxide, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, holmium oxide, erbium oxide, thulium oxide, ytterbium oxide, lutetium oxide and yttrium oxide co

    電感耦合等離子體發射光譜法測定氧化鈰中氧化鑭氧化鐠氧化釹氧化釤氧化銪氧化釓氧化鋱氧化鏑氧化鈥氧化鉺氧化銩氧化鐿氧化鑥和氧化釔量
  13. Yttrium - europium oxide - determination of lanthanum oxide, cerium oxide, praseodymium oxide, neodymium oxide, samarium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, holmium oxide, erbium oxide, thulium oxide, ytterbium oxide and lutetium oxide contents - inductively coupled plasma atomic emission spectrographic method

    氧化釔銪化學分析方法電感耦合等離子體原子發射光譜法測定氧化釔銪中氧化鑭氧化鈰氧化鐠氧化釹氧化釤氧化釓氧化鋱氧化鏑氧化鈥氧化鉺氧化銩氧化鐿和氧化鑥量
  14. This could increase the work function of ito, which would decrease the device threshold voltage and increase the luminescence efficiency consequently

    因此，採用氧等離子體處理的ito薄膜作為oled的陽極將降低發光器件的開啟電壓，提高其發光效率。
  15. In order to modify wool fabrics properties, low - temperature oxygen plasma is used to treat wool fabric

    摘要為了改善羊毛織物的氈縮、潤濕等性能，採用低溫氧等離子體對羊毛織物進行改性處理。
  16. Influence of in - situ oxygen plasma processing on the resistivity of diamond thin film

    原位氧等離子體處理對金剛石薄膜電阻率的影響
  17. On the other hand, oxygen plasma treatment makes ito film oxidized further, which decreases the number of oxygen vacancy and sn ~ ( 4 + )

    另一方面，氧等離子體處理使ito薄膜表面的富sn氧化物進一步氧化，形成穩定的sno ，減少了ito薄膜表面的氧空位和sn ~ （ 4 + ）數量，使其功函數增大。
  18. It is found that ito surface roughness decreased after oxygen plasma treatment, which can improve its wetting performance and consequently improve the film performance

    經氧等離子體處理后， ito薄膜的表面粗糙度減小，平整度提高，提高了ito薄膜表面的潤濕性能，改善了有機物在其表面的成膜性能。
  19. In the present work, water plasma ion implantation, instead of the conventional oxygen plasma ion implantation, has been employed to fabricate soi materials. the masses of the three dominant ion species in the water vapor plasma, h2o +, ho +, and o +, are very close to each other, which overcome the problem of co - existence of o and 02 in oxygen plasma source. the oxygen depth profiles in the water plasma ion as - implanted silicon do not disperse much, which makes it possible for the formation of single buried oxide ( box ) layer by choosing appropriate implantation energy and dose

    本論文創造性地採用水等離子體離子注入方式代替傳統的氧離子注入方式來制備soi結構材料，由於水等離子體中的三種離子h _ 2o ~ + 、 ho ~ +和o ~ +質量數相差很小，克服了氧等離子體中因o _ 2 ~ +和o ~ +質量數相差大而引起的氧在硅中的分佈彌散，使注入硅后的氧射程分佈相對集中，比較容易退火后形成soi結構材料。
  20. The chief results and conclusion thus arrived at are as folloes : ( 1 ) the morphology and electrical properties of indium - tin - oxide ( ito ) films which were treated respectively by ethanol, naoh, sulfuric and oxygen plasma, were studied from microscopic view by atomic force microscopy, x - ray photoelectron spectroscopy and goniometer

    （ 1 ）利用原子力顯微鏡、接觸角測試儀、紫外分光光度計從微觀角度研究了乙醇、氫氧化鈉、濃硫酸、氧等離子體處理對ito薄膜的表面性能和光電性能的影響。
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