氮化硅鈍化 的英文怎麼說
中文拼音 [dànhuàguīdùnhuà]
氮化硅鈍化
英文
silicon nitride passivation-
Various surface passivations of ps, such as by hydrogen, oxygen, nitrogen and noble metals, have been compared. the pss were formed by photoelectrochemical means
常見的表面修飾方法包括對多孔硅表面進行氫鈍化、氧鈍化、氮鈍化、金屬鈍化等，這些修飾方法各有其特點。The influence of sinx deposited by pecvd in different condition, especially changing deposition temperature, on the gaas surface after sulfur passivation is measured by sims analysis combined with the test for direct current breakdown characteristics
用sims分析結合器件直流特性測試，比較了在不同條件下淀積的氮化硅對gaas硫鈍化表面的作用，特別是淀積溫度分別為80 、 80 / 230 、 230時對硫鈍化效果的影響。Sinx thin film can improve the minor carrier lifetime of both mono and poly silicon by the simultaneous surface and bulk passivation
9 ）的提高；先沉積氮化硅薄膜再氫等離子體處理能得到更好的鈍化效果。However, the refractive index will increase with the increase of the flow ratio of sifu / nhs, slightly increase with the increase of substrate temperate, and decrease with the increase of rf power. by measuring the passivation results of hydrogen plasma and sinx thin film, we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment, although it has little to do with the annealing temperature and time. the hydrogen contained in sinx thin film can enhance the carrier mobility of monocrystalline silicon, but after annealing at high temperature the mobility turns down
通過測試氫等離子體鈍化和氮化硅薄膜鈍化的效果，實驗還發現氫等離子體處理對多晶硅材料的少子壽命提高作用比較明顯，但是這種提高作用與處理溫度以浙江大學碩士學位論文王曉泉2003年5月及時間的關系不大；氨化硅薄膜中的氫對單晶硅的載流子遷移率提高有一定作用，但經過高溫處理后這種作用消失；氮化硅薄膜能提高單晶硅和多晶硅的少子壽命，具有表面鈍化和體鈍化的雙重作用；氫等離子體和氮化硅薄膜都能有效地提高單晶和多晶電池的短路電流密度，進而使電池效率有不同程度（絕對轉換效率0A convenient and effective testing system for plastic eacapsulated microcircuit is designed. the testing results show that si3n4 passivation on test chip has the better protection than that without si3n4 passivation, and silicone gel coating can prevent moisture from the surface of the chip more effectively than polyimide coating, and molded plastic from varied manufacturers has the different effect on microcircuit due to its diversity
貯存試驗的結果表明，在晶元上加氮化硅鈍化層比不加鈍化層具有更好的防護效果；與聚酰亞胺膠內塗層相比，硅酮膠內塗層更能有效地阻止水分到達晶元的表面；由於材料本身的差異，不同廠家生產的模塑封裝材料對微電路的影響也不同。The new technologies of si3n4 passivation for si strain gauge
硅應變計的氮化硅鈍化新技術Both hydrogen plasma and sinx thin film can effectively enhance the short circuit current density of mono and poly silicon solar cells, which cause the improvement of the absolute transfer efficiency about 0. 5 % ~ 2. 9 %. depositing sinx thin film followed by hydrogen plasma treatment will result in better passivation effect. the thickness of sinx thin film will decrease and the refractive index will increase after annealing
經過薄膜後退火處理發現，氮化硅薄膜經熱處理后厚度降低，折射率升高，但溫度達到1000oc時折射率急劇降低；沉積氨化硅薄膜后400oc退火可以促進氫擴散，提高鈍化效果；超過400oc后氫開始逸失，晶體硅材料中的少子壽命急劇下降； rtp （快速熱處理）處理所導致氫的逸失比常規退火處理顯著。Effect of the structures of iron - passived porous silicon annealed in pure nitrogen ambients
高純氮氣退火處理對鐵鈍化多孔硅形貌的影響分享友人