熱晶體管 的英文怎麼說
中文拼音 [rèjīngtǐguǎn]
熱晶體管
英文
pyroelectric crystal-
The crystal detector was soon replaced by the thermionic value and had largely become obsolete by 1939.
晶體檢波器不久即被熱電子管所代替,到1939年已大部分變成了廢物。A transistorize radio takes no time to warm up
晶體管收音機不需要預熱時間。A triac heater was designed to form an experimental platform for industrial ethernet, and the temperature control software run on host pc developed. the thesis is divided into 5 chapters
為了組成一個工業因特網實驗平臺,設計了採用雙向晶閘管的加熱器電路,並在pc機上開發了上位機溫度控制軟體。Device degradation behaviors of typical - sized n - type metal induced lateral crystallized polycrystalline silicon thin film transistors were investigated under two kinds of dc bias stresses : hot carrier stress and self - heating stress
本文主要研究了典型尺寸的n型金屬誘導橫向結晶多晶硅薄膜晶體管在兩種常見的直流應力偏置下的退化現象:熱載流子退化和自加熱退化。Rapid screening test methods for thermal sensitive parameter of transistor
晶體管熱敏參數快速篩選試驗方法Rapid screening test methods for thermal sensitive parameter of mos field effect transistor
Mos場效應晶體管熱敏參數快速篩選試驗方法General model c38 dc meters are portable taut - band suspended moving coil instruments with light - spot indication. the meters have the feature of extremely high in sensitity and small in consumpition being particularly suitable to be used for measuring weak electric quantity on dc circututs, also for testing the static paramenters of transistors as well for measuring the output of millivolt values of zhermocouple in the vacuun furnaces ( or hydrogen furnaces )
C38型直流電表是磁電系張絲支承光點指示可攜式電表儀表具有極高的靈敏度,功耗小,特別適合弱電量直流電路測量及晶體管靜態參數測試用以及用做真空爐(或氧氣爐)中測量熱電偶的輸出毫伏值Adopts domestic advanced technology, imported transistor and heat emitting chip, has high reliability, stability and performance. improved the products working ability in bad condition, can be compared with imported ones
產品採用國內先進工藝,進口晶體管和良好的散熱片,保證了產品的可靠性和穩定性,提高了產品性能指標,增強在惡劣環境下工作的能力,並與進口產品相併論。According to negative temperature coefficient of vbe and positive temperature coefficient of vt, a framework of band - gap voltage reference is investigated. the reference offer a source of pir, distributed three voltage, one as upper - threshold voltage of dual - threshold comparator, the other as lower - threshold voltage of comparator, the other as direct current voltage for second band - pass filter amplifier
同時利用pnp晶體管發射結電壓的負溫度特性和發射結差值電壓的正溫度特性設計了一個帶隙基準電壓源。此帶隙基準電壓源本身作為熱釋電紅外傳感器的電源電壓,同時分壓提供雙限電壓比較器的上限電平和下限電平以及第二級帶通濾波放大器的直流電平。Finally, some efforts were employed to eliminate the support al2o3, which is very difficult to remove after the crystallization of al2o3 during the synthesis process. it is proved that hydrothermal process is an effective method to remove al2o3
由於a12o :在碳管生長期間從非晶變為晶體,十分難去除,因而提純過程相對復雜,最終結果顯示水熱法對氧化鋁的去除是比較有效的,可作為進一步優化提純的基礎。The company mainly produces high - tension and low - tension electric equipment, thyristors electrical machinery soft starter, automatic regulating silicon piles etc. it developed the technology with own patent adopting sun shape heat tube radiators with steam and water separated, and developed the integrated power module unit including thyristors and rectifiers with the technology. the products organization is novel, and it conducts heat rapidly and has solved the difficult problems of heat dissipation in generator excitation and exchange power
公司主要生產高低壓成套電器低壓動態無功補償裝置晶閘管電機軟啟動自動調壓硅堆等產品。研製開發出了「日」字形汽水分離式熱管散熱,並利用該技術開發了晶閘管整流管一體化功率組件,結構新穎,傳熱迅速,為發電機勵磁交流調功等領域解決了器件散熱難題,產品的各項性能均處于國內外領先水平。As a new bus standard in computer peripheral hardware, usb is adopted and widely used in virtual instruments for its ease of use, true plug and play, power supply from bus, high transmission speed, etc. the purpose of this project is to design and develop a virtual instrument that can test and display semiconductor transistor output characteristics curve, instead of tradition instrument which has being used in labs by now
而usb總線作為一種新興的計算機外設總線標準,由於易用、支持熱插拔、總線供電、傳輸速率高等特點,已經在虛擬儀器當中得到采納與普及。本文介紹了一種實現晶體管特性曲線測量的虛擬測試儀器的設計和製作方案,其可用來取代目前在實驗室中使用的老式的晶體管特性圖示儀。Poly - crystallization silicon thin film transistor ( p - si tft ) addressing liquid crystal display has been currently the research and development focus in the field of flat panel displays, as it is most feasible approach to high resolution, high integration and low power consumption as a result of its high aperture ration. there are less number interface of the crystal grain, lower metal impurity and higher mobility in the electric current director, the milc p - si tft has been the research focus in the fields of amlcd, projection display, oled etc. there are vast dangling bonds and bug
多晶硅薄膜晶體管( p - sitft )液晶顯示器可以實現高解析度、高集成度、同時有效降低顯示器的功耗,因而成為目前平板顯示領域主要研究方向;而以橫向晶化多晶硅為有源層的tft由於在導電方向有更少的晶界、更低的金屬雜質污染、更高的載流子遷移率而成為目前有源矩陣液晶顯示領域、投影顯示、 oled顯示等領域研究的熱點。If the qsc device implements current limiting, the excessive current would combine with the potentially large voltage drop across the pass transistor to generate unwanted heat within the handset as well
Qsc器件實現電流限制,過多的電流會和潛在地大壓降結合起來,通過晶體管產生不必要的發熱。To consolidate its competitive position, the group has continued its vertical integration of in - house production of critical components including crt monitor deflection yokes and lcd monitor panel assemblies
為了在競爭熾熱的商業環境中鞏固地位,集團持續推行垂直整合,包括自行生產映像管顯示器的偏轉線圈及自行組裝液晶體顯示板。In this paper, we resolve the question of high temperature when these high power transistor, and put forward that improving disseminate path and increasing interface area for disseminate will be achieved
文中有效解決了大功率晶體管的在工作時的發熱量較大的不利因素,提出改進散熱通道和加大散熱的接觸面積等可行的方法。The rapid development of tft - lcd as the mainstream of plane display devices, pushes the research tide to tft
以薄膜晶體管液晶顯示( tft - lcd )為主流的平板顯示器件的迅速發展,進一步推動了對tft的研究熱潮。At present, the crystal growth equipment is equipped with vacuum tube hf ( lmhz - 2. 5mhz ) induction heating power supply. while this supply has many disadvantages, such as low reliability, short longevity of vacuum tube, operational safety, low transfer efficiency
目前,用於晶體生長的區熔式單晶爐配套使用的是國外進口或國內生產的真空電子管式高頻感應加熱電源,存在諸如可靠性差、電子管使用壽命短、操作不安全、變換效率低等問題。With the voltage reduced by half, not only the static power consumption but also the requirement of the heat radiator are lowered accordingly, and the danger of the transistor broken down due to over - voltage is also reduced
電壓降低一半,不僅減少了靜態功耗,也降低了散熱器的使用要求和晶體管因過壓而造成擊穿損壞的危險。Vco ’ s theory and parameters especially for the basic mechanism of phase noise are studied. the parasitic effects of rf - ic passive devices such as inductors and varactors and the design guidelines for the on - chip spiral inductors are included too. the accumulation - mode varactor, which has a higher quality factor value than the inversion - mode mos varactor, is studied in detail
研究電感和變容管這兩種射頻集成無源器件的寄生效應和射頻mos晶體管的熱噪聲模型,提出集成電感的設計原則和優化方法,詳細研究了一種新型的積累型mos可變電容,這種積累型mos變容管比一般的反型mos變容管有更高的品質因數。分享友人