硅化物 的英文怎麼說

中文拼音 [guīhuàwù]
硅化物 英文
[無機化學] silicide
  • 硅 : 名詞[化學] silicon （14號元素符號 si）
  • 物 : 名詞1 （東西） thing; matter; object 2 （指自己以外的人或與己相對的環境） other people; the outsi...
  1. Investigation of the oxidation of mo3si - mo5si3 eutectic silicide

    3共晶硅化物的氧化
  2. Formation of la silicides by mevva ion implantation

    源離子束合成鑭硅化物
  3. Study of nd silicides synthesis by mevva source ion implantation

    源離子注入合成釹硅化物的研究
  4. The heat - reaction characteristics of ni / si and tin / ni / si structure and the regularity for forming the nisi film have been studied deeply and formed the excellent ni - salicide shallow junction diode

    文中對ni si和tin ni si的熱反應特性以及nisi薄膜的形成規律進行了詳細的研究。制備了優質的ni硅化物淺結二極體。
  5. The refractory metals and refractory metal silicides that are used to augment or replace the polysilicon are generally deposited by physical vapor deposition processes.

    用於增強和取代多晶硅的難熔金屬和難熔金屬硅化物通常是用物理蒸發沉積工藝沉積的。
  6. Tribological properties of a laser - clad cr2ni3si cr3si metal silicide composite coating

    金屬硅化物復合材料塗層耐磨性研究
  7. Standard specification for refractory silicide sputtering targets for microelectronic applications

    微電子設備用耐熔硅化物濺射電極
  8. The investigated anode materials include modified carbons, nitrides, silicides, oxides and novel alloys

    研究的負極材料主要有：改性碳材料、氮化物、硅化物、氧化物和新型合金。
  9. X - ray diffiaction confirms that the resulting ersi, film possesses the tetrahedral thsi, crystalline structure

    同步輻射x射線衍射以）研究結果證實了所形成的餌硅化物具有thsi 。
  10. ( 3 ) the analysis results of xrd, sem indicated that the ni - pd coating formed a fcc structure. after annealing at 200 ?, a little amount of pdsi was precipitated in the coating. the surface image of ni - pd coating was utricle

    （ 3 ）利用xrd 、 sem 、 aes等手段對ni - pd合金鍍層的結構、表面形貌、成分進行了分析，結果表明ni - pd合金鍍層形成了面心立方的固溶體結構，鍍層經過200快速退火后，有少量pd的硅化物（ pdsi ）析出。
  11. The walls of some algae differ, e. g. the silica boxes enclosing diatoms, and the calcareous layer on the cell walls of calcareous algae

    一些藻類的細胞壁的化學成分有所不同，例如硅藻屬的細胞壁含有硅化物，石灰質藻類的細胞壁含有鈣。
  12. With the decrease of silicide content in interfacial layer, leakage property of hfo2 mos architecture was greatly improved

    界面層里殘余的硅化物的含量越低，薄膜的漏電性能就越好。
  13. By carefully checking the leed pattern, it is found that the " ( 2x2 ) " pattem is actually a combination of the c ( 2 x 2 ) reconstruction from the ersi, island surfaces and the ( 2x l ) reconstruction from the bare si substrae

    對（ x2 ）再構的低能電子衍射的仔細研究表明，實驗中觀察到的px2 ）再構實際上是來自於餌硅化物的葉x2 ）再構與來自硅表面的cxi八門2 ）再構的迭加產物。
  14. The buried layers moves towards sample surface, forming surface layers. the implantation - damaged zone also moves towards the surface and is recovered gradually. the fe - implanted films were implanted, or doped, with small amount of carbon for improving the film quality

    另外隨退火溫度變化的還有注入損傷層，隨退火溫度的升高注入損傷逐漸恢復，損傷層厚度逐漸減小，到850的時候硅化物層斷裂，損傷層則上升到樣品表面。
  15. Annealing of the er - covered si ( 00l ) surfaces to 600 oc results in the emergence of a new component with a 1. 2 ev energy shift towards lower binding energy in the si 2p core level spectrum, which is indicative of the presence of some sort of er silicides

    同時，當覆蓋了鉺的樣品被退火至600 ，在硅2p3 / 2芯能級峰的低結合能端約1 2ev處出現了一個新的峰，並被確認為來自於鉺硅化物。
  16. It is the first time to study the mechanism of interfacial reaction in sic / ti composites by quantum chemistry computation methods. a suitable method to calculate titanium carbide and silicide was found and the thermodynamic and dynamic data involved in interfacial reaction of sic / ti composites have been obtained

    首次將量子化學計算理論運用於金屬基復合材料界面反應的研究中，運用gaussian98量子化學計算程序，找到了適合於研究過渡族金屬ti的碳化物和硅化物的計算方法，獲得了sic ti基復合材料界面反應的熱力學和動力學數據。
  17. Meanwhile, the er 4f spectrum measured upon annealing exhibits well - resolved fine structure, implying that only mono - species of er silicide may exist on the surface

    同時觀察到了清晰的鉺4f價帶譜，這暗示著只有一種鉺硅化物在表面形成。
  18. Our company is a joint - stock company operated under the modern corporation system. we have a production line of organic chloride, silicide, nitride compounds and etc

    本公司是一家集醫藥中間體研發、生產、銷售為一體的、按現代企業制度運作的股份企業。目前產品以有機鹵化物、有機硅化物、氮化物系列產品為主。
  19. In this paper, ni - salicide process has been investigated intensively for the application to deep sub - micron coms devices. with the size of devices scaling, ni - salicide is more suitable for cmos devices than ti - salicide or co - salicide by improving salicide process

    隨著器件尺寸的進一步縮減，與傳統的ti 、 co自對準硅化物相比， ni自對準硅化物更能適用於cmos器件對硅化物的要求。
  20. 2. from the si and er core ievel spectra and the si valence band spectrum a rather detailed description of the er / si ( 00l ) interface formation is presented. the following results can be extracted

    2鉺硅（ 001 ）界面、表面及鉺硅化物最初形成過程研究首先利用同步輻射光電子能譜方法研究了室溫下鉺在硅（ 001 ）表面的淀積和退火過程。
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