硼摻雜 的英文怎麼說

中文拼音 [péngchānzá]
硼摻雜 英文
boron dope
  • 硼 : 名詞[化學] （非金屬元素） boron （b）
  • 摻 : 摻動詞[書面語] （持; 握） hold
  • 雜 : Ⅰ形容詞（多種多樣的; 混雜的） miscellaneous; varied; sundry; mixed Ⅱ動詞（混合在一起; 攙雜） mix; blend; mingle
  • 摻雜 : 1. mix; mingle2. doping; inclusion; addition; adulteration
  1. The spectroscopic properties of eu3 - doped borate glasses

    摻雜硼酸鹽玻璃的光譜性質研究
  2. Practice for conversion between resistivity and dopant density for boron - doped and phosphorus - doped silicon

    摻硼磣磷硅單晶電阻率與摻雜劑濃度換算規程
  3. The i - v and c - v characteristics of bn ( n - type ) / si ( p - type ) heterojunctions have been studied to close to that of ideal heterojunct ion. 6 in this paper the mechanism of cbn formation and bn films n - type doping as well as bn ( n - type ) / si ( p - type ) conducting

    6文章還對立方氨化硼薄膜的成核和生長機理，氮化硼薄膜的n型摻雜機制和bn型）侶i …型）異質結的電流輸運機制進行了探討。
  4. Doping properties of mgb2 superconductor

    硼化鎂超導體的摻雜性質
  5. With the development of doping technology, the formation of the base region in high - voltage transistor can be made by b diffusion technology, b - a1 paste - layer diffusion technology, close - tube ga - diffusion technology and open - tube gallium - diffusion technology

    隨著摻雜工藝的不斷發展，高反壓晶體管基區的形成經歷了擴硼工藝、硼鋁塗層擴散工藝、閉管擴鎵工藝到開管擴鎵工藝的發展。
  6. Preparation of semiconductor cubic boron nitride crystalline with silicon diffusion

    硅摻雜半導體立方氮化硼單晶的制備
  7. We fully utilized the characteristics of the deficient electron structure ( carbon sp3 and boron ) and easy oxidation introducing - oh on bdd electrode surface to preparation of biosensors, which were used to investigate the electrochemistry of biological molecules and be rapid, sensitive

    利用bdd電極的表面缺電子結構（ sp3雜化碳和摻雜的硼）和易於氧化引入- oh的特點，在氧化或未氧化的bdd電極表面修飾化學/生物物質製成化學/生物傳感器，研究生物分子在電極表面的電化學特性，並實現對生物分子的準確、快速、靈敏、簡便測定。
  8. It is showed that after doping s the bn thin films of n - type conductivity are obtained

    研究表明，未摻雜的氮化硼薄膜電阻率為為1
  9. 2 for the first time, rf sputtering method and vapor doping method have been combined to prepare n type bn films. bn films doped with s are n type conductivity

    摻s后的氮化硼薄膜表現出n型導電，未摻雜的氮化硼薄膜的電阻率1 . 8 1011 cm ，摻雜后的氮化硼薄膜的電阻率為7 . 3 107 cm 。
  10. Surface chemical analysis - secondary ion mass spectrometry - determination of boron atomic concentration in silicon using uniformly doped materials

    表面化學分析.次級離子質譜法.利用均勻摻雜材料測定硅中硼原子濃度
  11. But there are still several problems concerning the stability and reproducibility of device fabrication. the heavily born doped p - type diamond films synthesized by hot filament chemical vapor deposition with b ( ch3 ) 3 as boron source substituted the metal electrode aluminum

    本文還利用熱燈絲化學汽相沉積（ hfcvd ）法，採用硼酸三甲酯b （ ch3 ） 3為硼源制備了重摻雜p型金剛石膜，作為lppp / alq異質結增強型發光器的電極。
  12. In order to avoid light degradation, low interstitial oxygen content and low boron concentration b - doped p - type cz - si material should be used, for example, the resistivity can be from 5 - 10. cm, the efficiency has reached to 22. 0 %

    上述研究工作表明：為了避免光衰減，提高矽片少子壽命，應該選擇低氧濃度的矽片，並降低硼的摻雜濃度，即：使用高阻材料製作太陽電池。
  13. The main results of this study are summarized as folio wings : firstly, the effect of rare earth - doped catalyst to the synthesis of carbon nanotubes was systemic studied ; the vary of morphology and content of catalyst in the catalysis synthesis process of carbon nanotubes was also deeply investigated, which is helpful to the understanding of carbon nanotube growth mechanism

    本文利用cvd和熔劑法及直接氧化法在合成和表徵碳納米管、硼基納米材料及其他若干材料等方面做了以下初步的探討： （ 1 ）系統研究了稀土摻雜催化劑對碳納米管生長的影響及催化合成碳納米管過程中催化劑形貌和成份的變化，加深對碳納米管生長機制的理解。
  14. Morphology of b - doped diamond had been observed by sem. boron contents and impurity situation of b - doped diamond had been analyzed by ftir / raman and xrf

    對含硼金剛石在sem下進行形貌觀察，通過紅外拉曼光譜、 x射線熒光（ xrf ）分析硼摻雜的存在狀態和含量。
  15. 1. boron - doped diamond ( bdd ) electrodes have recently attracted considerable interest, especially for electrochemical analysis due to its outstanding characteristics : ( 1 ) very low background current density ; ( 2 ) a wide potential window in aqueous solution ; ( 3 ) good activity toward some redox analytes without any pretreatment ; ( 4 ) long term response stability

    1 .硼摻雜金剛石（ bdd ）電極具有較低的背景電流、無需作任何處理的情況下對一些氧化還原分析物有好的活性、高電化學穩定性、寬的電位窗口和長時間的響應穩定性等優點，研究了一些活性物質在bdd電極上的電化學性質。
  16. Thus it is considered that the technique of dz formation by means of rtp may not be suitable for heavily boron - doping cz silicon. since the higher concentration vacancy could decrease the stress inducing by oxygen precipitates, the size of the oxygen precipitation with higher density was smaller in the hb si samples in comparison with the samples without rtp pre - annealing. moreover, as for the technique to generate dz by rtp in lightly boron - doping samples, it was found that the behavior of oxygen precipitation and dz was determined by the annealed temperature, followed annealing and ambient of rtf as well

    結果顯示，對于普通輕摻矽片能形成明顯的很寬的潔凈區的rtp預處理工藝，應用於重摻硼樣品時沒有潔凈區形成，所以rtp預處理獲得潔凈區的工藝不適用於重摻硼矽片，硼的大量摻雜對氧沉澱促進效果大於高濃度的空位對氧沉澱的洲排浙江大學碩士學位論文李春龍：直拉重摻硼硅單晶中氧沉澱的研究促進效果；大量空位的引入，有利於釋放氧沉澱生長過程的內應力，適當增加重摻硼樣品氧沉澱密度，減少其尺寸，並伴有層錯生成。
  17. In this paper we studied the influence of process parameters of depositing cbn films, the n - rype doping of bn films and the properties of p - si / n - bn heterojunctions and gained the results as follows

    本文主要研究工藝參數對制備立方氮化硼的影響，氮化硼的n型摻雜和p - si n - bn異質結特性等內容，得到了如下主要結果。
  18. Cubic boron nitride ( c - bn ) thin films have significant and potential technological application prospect in cutting tools, electronic and optical devices, etc. because c - bn possesses excellent physical and chemical properties, such as ultrahigh hardness only inferior to diamond, inertness against oxidation at high temperature, uneasy reaction with iron group metal, as well as the possibility of using as n - and p - type doped semiconductors

    立方氮化硼（ c - bn ）具有優異的物理化學性質，如僅次於金剛石的硬度、高溫下強的抗氧化能力、不易與鐵族金屬反應、可n型摻雜也可p型摻雜成為半導體等，立方氮化硼（ c - bn ）薄膜在切削刀具、電子和光學器件等方面有著潛在的重要應用前景。
  19. Cubic boron nitride ( cbn ) thin films have significant and potential technological application prospect in cutting tools, electronic and optical devices, etc., because cbn possesses excellent physical and chemical properties, such as ultrahigh hardness only inferior to diamond, inertness against oxidation at high temperature, uneasy reaction with iron group metal, as well as the possibility of using as n - and p - type doped semiconductors

    立方氮化硼（ cbn ）具有優異的物理化學性質，如僅次於金剛石的硬度、高溫下強的抗氧化能力、不易與鐵族金屬反應、可n型摻雜也可p型摻雜成為半導體等，立方氮化硼（ cbn ）薄膜在切削刀具、電子和光學器件等方面有著潛在的重要應用前景。
  20. A substance, such as boron, added in small amounts to a pure semiconductor material to alter its conductive properties for use in transistors and diodes

    摻雜質，摻質劑加入純半導體材料中的少量硼等物質，用於晶體管和二極體中以改變半導體的導電率
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