等離子加強的 的英文怎麼說

中文拼音 [děnglízijiāqiángde]
等離子加強的 英文
plasma-enhanced teos oxide deposition
  • 等 : Ⅰ量詞1 （等級） class; grade; rank 2 （種; 類） kind; sort; type Ⅱ形容詞（程度或數量上相同） equa...
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 強 : 強形容詞（強硬不屈;固執） stubborn; unyielding
  • 的 : 4次方是 The fourth power of 2 is direction
  • 離子 : [物理學] ion
  1. Knowing you fear to face the parting, i don ' t dear to see you, don ' t dear to see your eyes, until i get on iron horse, the music of piano make me fell more distressed, also i fell so happy before you, but just in appearance, now i cannot help my tears, i feel helpless, don ' t want you sad, i think we will not leave each other for ever one day, you said you will treasure me for one life because you love me !

    知道你怕離別的傷感，下地鐵的時候，我不敢回頭，不敢看你的眼神，直到沖上火車，車廂里響著悠悠的鋼琴聲，讓我此時的心情更加傷感，一路上和你嬉笑怒罵，表面堅強的我忍不住淚流滿面，不願你難過，我想我們一定能等到永遠在一起的那一天，你說過，愛一個人就要珍惜一輩子的，對嗎？
  2. Correct measures are essential to carry out the peoples equality and development policy and pertinent religion policy in the multi - nation - state ; to form a correct concept of people and to publicize correct ethos by combining nationalism with patriotism ; to prevent and expose the western countries " factionalism on the peoples issues to the multi - nation - state ; to set down the active and effective measures aimed at the terrorist character of the peoples separatist forces. due to the pervading existence of the peoples separatist forces in the world, different countries need to reach the common conclusion to strike the peoples separatist forces ; to cut the capital resources of the peoples separatist forces and terrorist activities, to root out the basement of them, with the lead of un, strike the international support to them ; besides, different countries should strengthen nation security protection, form a new concept of national security, get international and organizing cooperation and get rid of every form of hegemony and power politics

    在民族國家內部應正確實施民族平等團結、各民族共同發展的民族政策及相關的宗教政策；樹立正確的民族觀，把民族主義與愛國主義相結合，進行正確的民族主義思想理論宣傳；防止和揭露西方國家對其他多民族國家實行的民族分裂政策；針對民族分離主義恐怖主義活動的特點，制定出積極、有效的防範措施。由於民族分離主義勢力在世界范圍內具有普遍性，因此，各國應求同存異，尋求打擊民族分離主義及恐怖主義活動的國際共識；切斷民族分離主義分子進行民族分離活動和恐怖活動的資金來源，鏟除國際民族分離主義活動的基地，並充分發揮聯合國主導作用，打擊國際不法組織和個別國家對恐怖活動的支持；此外，各國還應共同加強國家安全工作，樹立新的國家安全觀，進行有組織的國際安全合作，戒除一切形式的霸權主義、強權政治。
  3. The control of beam halo - chaos becomes a critical problem in the development of high intensity accelerator. efforts to remove the halo by collimation have been largely unsuccessful since the halos almost always regenerate. the mechanisms of halos are complex, such as nonlinear resonances and chaotic behavior etc. considering this, professor fang jin - qing who works in china institute of atomic energy pointed out that the theory of chaos control can be used to control beam halos. he presented the method to control halos by using nonlinear functions, which means nonlinear function g is added to the right of ion radial self - edlctric force equation and some nonlinear function are selected to control beam halos in simulations. in paper [ 69 ], controllerg = - 0. 15sin ( rmax - am ) 2 was used and the halo intensity was decreased to 0. 1078, the halos are removed partly

    束暈?混沌的控制是新一代強流加速器研製的關鍵問題，隨著強流離子束應用前景的日趨廣闊而日益成為研究的熱點。傳統機械限束器因無法解決束暈的再生而收效甚微，因為束暈的形成有著其內在動力學機制?非線性共振以及混沌等。基於此，中國原子能科學院研究員方錦清將混沌控制的理論和方法開創性的運用於束暈?混沌的控制上，提出了控制束暈?混沌的非線性控制策略，即在粒子徑向所受束自生場力方程的右邊加上非線性控制函數g ：並選取一些非線性函數如等進行了控制的模擬研究，將束暈強度控制在0 . 1078左右，取得了初步的控制效果。
  4. The questions the researcher concerned are which system will be chosen and how to obtain the good lithium ionic conductor materials, which is the basic departure of the paper. the addition of second phase in composite can change the interface structure and the conduction mechanism, improve the matrix conductivity and other function such as the sintering, crisping and so on, so the research of composites are an interesting field of the ionic conductors. the synthesis of lithium ionic conductor is often by solid state reaction, but this method needs high temperature and leads to the volatility of lithium which not only causes the drift of the compounds but gets the no well - distributed materials

    研究者所關注的問題是選擇新的體系進行研究，以期得到性能更好的鋰離子導體材料，這也正是本論文的基本出發點；復合離子導體中第二相的加入改善了基質的界面結構和導電機制，不僅可以提高基質材料的電導率，還可以在一定程度上改善材料的其它性能，如燒結性能、脆性和機械強度等。因此復合材料的研究是離子導體一個有廣闊前景的發展方向；合成鋰離子導體，特別是成分復雜的體系以傳統的固相合成法為主，但這種方法需要較高的溫度，容易引起鋰的揮發，從而造成產物組成的偏移，而且不易得到顯微結構均勻的材料。
  5. During the interaction of ultra - short and ultra - intense laser with plasma, application of energetic protons generated by this interaction are proton imaging, compact particle accelerators, diagnosis the interaction of ultra - short and ultra - intense pulse laser with plasma, " fast ignitor " and proton cancer therapy etc

    摘要超短超強激光與等離子體相互作用中得到的高能質子在質子成像、粒子加速、診斷超短超強激光與等離子體相互作用的物理過程、 「快點火」和治療癌癥等方面有一定的應用。
  6. Was added, the absorption of morin at 350nm decreased and a new absorption peak at 419nm appeared. adding of nucleic acids to the morin - al binary system leads to decrease of the absorption at 350nm and great increase at 419nm. there is an isochromatic point at 370nm. the increase of absorbance at 419nm is proportional to the amount of nucleic acids added within certain concentration range. based on this, a new sensitive nucleic acids analysis method is established. the linear ranges of ct dna, fs dna and y rna are 0. 7135. 4 0. 6425. 6 and 0. 9428. 4g ml, respectively

    鋁離子的加入使桑色素350nm處的吸收峰下降，在419nm處出現桑色素-鋁絡合物的吸收峰。再往桑色素-鋁離子二元體系中加入核糖核酸或脫氧核糖核酸，則進一步引起桑色素350nm吸收峰的降低， 419nm處的吸收大大加強，同時在370nm處有一等色點。 419nm處吸光度的增加值與加入的核酸量在一定范圍內成正比，基於此建立了在較寬范圍內測定核酸的方法。
  7. Furthermore, the growth and the study of self - organized quantum dots structures become more and more important recently, and the application of self - organization technique become wider and wider in this thesis, we address the theory of film growth and the growth technique firstly more, the ways and characteristics of surface detection are prescribed we mainly report the growth process, results and discuss of self - organized quantum dots structures in the a12o3 substrates by s - k mode using ecr - mocvd, in the espd - u device the growth art of ain epilayer which is the preliminary foundation of self - organized gan / ain quantum dots structures, including the substrate cleaning, nitridation, the growth of buffer and the growth of gan and ain epilayer, is discussed we deliberately compare the test result of rheed xrd and afm and achieved the optimalized condition of ain at last we have successfully realized the growth of ain which is much smooth and better crystal quality moreover, we grow the self - organized gan / ain quantum dots structure in s - k mode because the limits of the heater temperature, we can not grow the atom - smooth epilayer of ain until now so we could not grow better quantum dots which have small diameter and big density but the self - organized quantum dots structures with better quality will be realized successfully if the substrate temperature is increased the thesis study belong to my tutor subject of national nature science foundation ( 69976008 )

    本論文主要論述了在espd - u裝置上，採用電子迴旋共振等離子體增強mocvd （ ecr - pamocvd ）方法，在藍寶石襯底上通過s - k模式自組裝生長gan aln量子點結構的生長工藝、結果及討論。而重點分析了自組裝生長量子點之前的aln外延層生長工藝，包括襯底清洗、氮化、緩沖層的生長和gan 、 aln外延層的生長；通過高能電子衍射、 x射線衍射和原子力顯微鏡測試，並且對這些測試結果進行了詳細的比較研究，得出了較優化的工藝條件，生長出了晶質較好、表面較平整的aln外延層；進而採用s - k模式自組裝生長了gan aln量子點結構。由於實驗裝置加熱爐溫度的限制，我們沒有能夠生長出原子級平滑的aln外延層表面，因而沒能夠生長出密度比較大和直徑比較小的量子點。
  8. The research on the radiation effects of materials induced by high - energy proton irradiation is of important significance in many scientific fields, such as the single event effects of semiconductor components exposed on space, accelerator - driven nuclear energy generator, tritium production by accelerator, intense pulsed ion beam technology, proton radiography, etc. the effects and mechanisms of irradiation vary vastly for different energies and intensities of proton beams

    宇宙高能質子的單粒子效應（ see ）研究、潔靜核能系統（ ads ）研究、加速器產氚計劃（ apt ） 、強脈沖離子束（ ipib ）技術、質子斷層掃描等領域都涉及質子輻射效應問題。質子輻射對不同的材料會導致不同的效應，開展質子輻射效應產生的機制研究，掌握其效應規律，對于電子學元器件的抗輻射加固指標提出，以及在其他研究中的方案設計等都有重要意義。
  9. There are distinct changes about shifts or intensity in bulk plasmon, surface plasmon, and interband electron transitions losses as a result of oxidation of specimens, and adsorption and oxidation processes can be studied through these changes. at room temperature, the formation of oxide layers on uranium and uranium - niobium alloys were found to occur rapidly upon exposure to oxygen, and the resultant oxide in each case was near - stoichiometric uo2. due to formation of niobium oxide in uranium - niobium alloys, the diffusion of o ~ ( - ) ( o ~ ( 2 - ) ) and u ~ ( 4 + ) in the interface region was prevented, and the corrosion resistance of uranium - niobium alloys to oxygen is greatly enhanced by alloying with niobium

    研究結果表明：清潔表面鈮和鈾的體等離子體振蕩所造成的電子能量損失的實驗值與理論計算值較為符合；隨著氧化程度的加劇，表面等離子體（ sp ） 、體等離子體（ bp ）以及價帶電子躍遷所造成電子能量損失的譜峰發生了明顯的連續偏移或強度的變化，這些變化可以用來分析鈾及鈾鈮合金的初始氧化過程；室溫下，鈾及鈾鈮合金很容易與氧作用，最終結果，鈾僅氧化為二氧化鈾，另外，在鈾鈮合金氧化過程中，因為有鈮的氧化物存在，不利於氧和鈾在界面擴散，增強了鈾鈮合金抗氧化性能； eels能獲得樣品表面的信息比aes更為表面，更為靈敏，但由於eels的譜線過于集中，主要在幾十ev以內，也有不容易區別和解譜的不足。
  10. With the intensity of laser increased a series of new phenomena appears, for example, multiple photon lonization ( mpi ), above threshold lonization ( ati ), tunnel lonization ( tl ), stable lonization ( si ) and so on

    隨著激光強度的增加，會出現一系列的新現象，例如多光子電離，隧穿電離，閾上電離和穩定化電離等現象。
  11. Several influence factors to result plasma drift in hainan were analyzed. in this paper the characteristics of ionospheric parameters variation were analyzed systematically and some new results in storm - time such as seasonal behaviors were obtained ; it is the first time to investigate the ionospheric drift behavior in hainan and some new results was obtained, the relationships between each two plasma drift velocity components in storm time in hainan were found and the electric filed variation in hainan ionosphere also was obtained ; the results also show that there are big differences of the ionosphere parameters bo and bl obtained from the data with that obtained from the iri - 2001 applied for hainan ; a new phenomena was found during a strong magnetic storm, that a layer with very strong electron density and density grad was found during the recovery phase of the storm, its horizontal scale is beyond 100km and temporal scale is about 2 hours, this phenomena repeated 3 times continuously. a type of negative disturbance in high and low latitude but positive disturbance in east - asia also has been found

    本文較為系統地給出了海南地區電離層的參數變化特徵，特別是得到了一些暴時與以往不同的季節特性；第一次給出了海南地區的電離層等離子體漂移特徵，發現等離子體漂移暴時擾動在三個方向上有內在的聯系，得到了電場變化曲線；研究結果還表明海南電離層的半厚指數和形狀參數等與國際參考電離層iri - 2001存在很大差別；通過對強磁擾動事件期間的參數變化特性分析發現，在磁暴恢復相期間海南地區電離層底部存在一個電子密度非常大的高密度區，高密度區底部電子密度梯度隨高度急劇增加，該區域的水平尺度可達100公里以上時間尺度約為2小時，連續出現過三次，這是一個在海南從來未發現的新現象；研究還發現了暴時東亞地區電離層擾動會出現高低緯負相而中緯正相的現象。
  12. This paper has discussed preparing diamond - like carbon films by means of micro - wave ecr plasma source ion implantation and plasma enhanced chemical vapour deposition. we use the raman spectrum, ft - ir, afm and so on to study the dlc film. the result indicates : different bias voltage, frequency and gas flow rate of psii will have impact on sp3 proportion of dlc films, we find high bias voltage, low frequency and moderate gas flow rate can prepare high sp3 proportion dlc films ; we simply illustrate the influence of bias voltage on sp3 proportion of dlc films in pecvd

    研究結果表明：在全方位離子注入技術中，不同的偏壓、頻率、氣體流量都對薄膜中sp ~ 3鍵比例有所影響，文中對具體的影響進行了分析，發現偏壓的增加、頻率的降低和適中的氣體流量可以制備出sp ~ 3鍵比例高的類金剛石膜；在等離子增強化學氣相沉積技術中，對偏壓對sp ~ 3鍵比例的影響也進行了簡單分析。
  13. ( 2 ) diamond - like carbon films could be fabricated by plasma enhanced chemical vapor deposition method too, the surface morphology of the films was good, but the films had very big internal stress, which could be decreased by adding proper nitrogen gas in work chamber

    （ 2 ）用等離子體增強化學氣象沉積技術也能制備類金剛石膜。優點是用這種方法制備的薄膜表面形貌得到了一定的改善，但內應力較大，通過加入適量的氮氣可以改善一些。
  14. The neutral gas pressure is smaller where electric fields is stronger, which is independent of the instantanious electric polarity of the electrode and cause gas flow from high pressure region to low pressure region. so flow can be accelerated if electric field is properly adjusted, which is the mechanism of the active flow control

    場強越大的區域氣體靜壓反而越低，而與瞬間電極的極性無關，導致了氣體從高壓區到低壓區的流動，因此只要適當改變電場的分佈就可以使氣體產生加速，這就等離子體主動流動控制的加速機理。
  15. At the same time, the energy absorbed in the crack propagation phase decreases relatively that lead to overall energy absorption of the composites increases slightly, it is greater than 12. 89 %. by observing the appearance of the damage area, it can be found that the mode of damage is influenced by the interfacial shear strength. if the interfacial shear strength is low, fiber pull - out is the primary energy - absorbing mechanisms, whereas the dominant energy - absorbing mechanisms changes into fiber / matrix debonding and delamination when the interfacial shear strength is stronger

    界面剪切強度增加后，材料的沖擊極限載荷有所增加，在裂紋起始區吸收的引發能增加較多，其中增強纖維經等離子體處理6分鐘的試樣所吸收的引發能增加了18 . 57 % ;由於裂紋擴展階段所吸收的能量相對有所下降，材料總的能量吸收能力雖有所改善，但增加不多，其中界面剪切強度增加最多的試樣，吸收的總能量增加了12 . 89 % 。
  16. In fact, there are many elements which influence the special character, such as the intensity and frequency of the laser, the binding energy of atom, an additional field and so on

    實際上，有許多因素會影響到諧波譜線的具體性質。例如：所加激光脈沖的強度和頻率，原子的電離勢以及外加的磁場或電場等。
  17. The results show that the differences between the two composites are very large. although the micrograph of the ni nano - wire and the co nano - wire are nearly the same, as the metal composition increased, the absorption band - edge of the ni / aao composite is small red - shifted ( 13 run ), however, the absorption band - edge of the co / aao composite is strongly red - shifted ( 80 nm ). meanwhile, the ni / aao and co / aao composite exhibit the optical features of the semiconductor with indirect and direct band gap respectively

    或no組份比的增加， ni / aao吸收邊的紅移量僅約13nln ，而co / aao的吸收邊紅移量卻超過了80lun ，分析發現ni / aao復合體系具有間接帶隙半導體的光學特徵，而co從ao復合結構則具有直接帶隙半導體的光學特徵; 5 .實驗研究了a創aao納米有序陣列復合結構的光吸收特性，在其光吸收譜上出現了較強的ag表面等離子體振蕩吸收峰，隨ag沉積量的減少，吸收峰位發生紅移，且逐漸展寬
分享友人
分享到 Line

分享到臉書