結晶學平面 的英文怎麼說
中文拼音 [jiējīngxuépíngmiàn]
結晶學平面
英文
crystallographic plane- 結 : 結動詞(長出果實或種子) bear (fruit); form (seed)
- 晶 : Ⅰ形容詞(光亮) brilliant; glittering Ⅱ名詞1. (水晶) quartz; (rock) crystal 2. (晶體) any crystalline substance
- 學 : Ⅰ動詞1 (學習) study; learn 2 (模仿) imitate; mimic Ⅱ名詞1 (學問) learning; knowledge 2 (學...
- 平 : Ⅰ形容詞1 (沒有高低凹凸 不頃斜) flat; level; even; smooth 2 (高度相同; 不相上下) on the same l...
- 面 : Ⅰ名詞1 (頭的前部; 臉) face 2 (物體的表面) surface; top 3 (外露的一層或正面) outside; the ri...
- 結晶 : 1 (析出晶體) crystallize2 (晶體) crystal 3 (成果) crystallization; fruit; product; quintess...
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In this chaptef, we obtain tliree opl smictures of corresponding compounds and conclude through comparison that plane property goes bad with length of substitutes attaching to the cations. chaper 3 : has systendic studies of opticai propenies of this seriai compounds
共解析了三種化合物的單晶結構,並且從結構分析發現隨著陽離子上的取代基的加長,陽離子的平面性下降第三章主要對這一系列化合物的光學性質作了系統研究。Sem results imply that the surface of thin films deposited by chemical bath method is correlate to the reaction conditions. surface of sns thin films deposited by chemical bath method are coarse than thin films deposited by chemical bath with ultrasonication method and successive ionic layer adsorption and reaction method
Sem結果顯示用常規化學浴方法所制備的薄膜樣品的表面形貌與反應條件有關,而用超聲波輔助化學浴和連續離子反應法制備的薄膜樣品的表面較之常規化學浴方法所得到的薄膜樣品表面晶粒細小均勻,緻密平整。During the course of the manufacture for packaging 2000 pixel hgcdte irfpa wafer, some crucial techniques are solved, such as the design of the button stem structures with inclined dragging wires applied in cryogenic platform, the optimization of long linear irfpa detector ' s signal wires layouts, the implement of a fanout board having thin film gold metalization for defining the required electrical conductors and a method of hermetically sealed vacuum enclosure of large dimension windows, etc
在用於封裝2000元碲鎘汞焦平面晶元的分置式微型杜瓦研製中,詳細闡明了一種焦平面晶元其裝載面為斜拉式支撐結構的設計,實現了探測器外引功能線的布線優化及其輸出引線工藝改進,並提出了一種大尺寸高氣密光學窗口的焊接方法等關鍵技術。In chapter 5 we discuss the design of ieee754 standard fpu ( floating point unit ). processor and uart ( universal asynchronous receiver transmitter ), these cores are used in this dissertation, fpu is used for floating point complex fft processor, uart is used for fft processor " s peripheral and our test platform. in chapter 6 we discuss the design for testability, including atpg, bist and jtag method, discuss the different verification and simulation strategy in soc scale facing to different modules, build up the test platform which is used to test high performance application specified digital signal processing processor. in chapter 7 we summarize the research results and creative points, and point out the further work need to do in the future
第五章提出了基於ieee754浮點標準的浮點運算處理器的設計和異步串列通信核的設一浙江大學博士學位論文計,提出了適合硬體實現的浮點乘除法、加減運算的結構,浮點運算處理器主要用於高速fft浮點處理功能,異步串列通信核主要用於pft處理器ip核的外圍擴展模塊以及本文所做的驗證測試平臺中的數據介面部分第六章提出了面向系統級晶元的可測試性設計包括了基於掃描測試atpg 、內建自測試bist 、邊界掃描測試jtag設計,在討論可測試性設計策略選擇的問題上,提出了針對不同模塊進行的分別測試策略,提出了層次化jtag測試方法和掃描總線法,提出了基於fpgaAccording to the guidline, two nd : yag lasers have been designed and set up, one is end - pumped by lower output power ld using a selfoc micro lens, and the other is end - pumped by high output power ld using a pair of lenses are designed, and the characteristics such as output power and power stabilization of both solid - state lasers are investigated. thirdly, when an empty liquid crystal cell is inserted in the cavity of the nd : yag laser pumped by high power ld, the laser can operates in single axial mode. finally, according to the relationship between the laser output power and the longnitudinal a ld - end - pumped nd : yag laser sensor for displacement measurement has been investigated theoretically and demonstrated experimently, the results indicate that when the mean radius of pumping inside the laser cavity is far less than that of the oscilating laser mode, the exponential of the output power is a gauss function of the longitudinal positon of focused spot of ld pumping beam, both the measurement range and the sensitivity are dependent on the incident pumping power, as the incident pumping power is increased, the measurement range is enlarged and the sensitivity is improve d
本文首先介紹了ld泵浦nd : yag激光器的發展狀況、主要特性及其應用,從四能級速率方程出發,推導了ld泵浦nd : yag激光器的閾值、輸出功率和斜效率的表達式,並簡述了激光器的工作原理、結構型式和倍頻方法;其次,以空間相關的速率方程為基礎,提出了ld端面泵浦nd : yag激光器的設計方法,給出了一定泵浦耦合方式下,振蕩光模尺寸、最佳輸出耦合率、泵浦光模尺寸、泵浦光焦斑位置等參數的選取依據,以此為依據,設計了自聚焦透鏡耦合小功率ld泵浦nd : yag激光器和透鏡組耦合高功率ld泵浦nd : yag激光器,對激光器的輸出功率和功率穩定性等特性進行了實驗研究;再次,在帶尾纖輸出的高功率ld泵浦nd : yag激光腔內插入一隻空液晶盒,觀察到了激光器以單縱模運轉;最後,根據泵浦光焦斑端面位置對激光輸出功率的影響規律,提出了ld端面泵浦nd : yag激光位移傳感新方法,並進行了理論和實驗研究,研究結果表明:當激光晶體內泵浦光平均光斑半徑遠小於振西安理工大學碩士學位論文蕩光束腰半徑時,激光輸出功率的自然指數與泵浦光焦斑的縱向位置成高斯變化規律,測量范圍和靈敏度依賴于泵浦功率,隨著泵浦功率的增加,測量范圍擴大,靈敏度提高,當端面泵浦功率為7 . 24w (最大輸出功率為1 . 926w )時,激光位移傳感器的測量范圍和靈敏度分別是13 . 045mm和0 . 148mw / pm 。With the thermodynamic theories and techniques, it is relatively easy to determine the phase equilibrium data with enough accuracy, however there still exist much more difficulties in crystallization kinetics study even for a simple binary system. that is the reason that nucleation and crystal growth rate are generally represented in form of the empirical expressions. the crystallization kinetic is important for crystallizer design, process control and optimization, and it is strongly depended upon the accurate characterization of process information concerning with multiphase flows and the further disclose of its mechanisms with suitable mathematical models
熱力學理論和方法已足以獲得準確的相平衡關系;然而即使對于簡單的二元物系的結晶過程,晶核形成和晶體生長動力學的研究仍面臨許多困難,通常採用經驗模型表述,而動力學參數的準確性和可靠性是結晶器放大設計、過程式控制制與優化的關鍵,因此多相流信息的準確表徵、結晶機理的進一步揭示及建立起與之相適應的數學模型有著十分重要的學術研究和實際應用價值。( 3 ) fabrication methods of planar, y - branches, and channel waveguides employing structure lights formed by cylindrical lenses and optical binary masks are investigated experimentally in detail
對利用柱透鏡和光學二元掩模板形成的結構光在光折變晶體中寫入平面光波導、 y型光波導以及通道光波導的方法進行了詳細的實驗研究。However, the die attach layer delaminated after 500 cycles and pcb cracked in the underfilled samples after long time cycling. c - sam is employed to investigate the delamination in the underfilled samples. highly concentrated stress - strain induced by the cte mismatch between the bga component and the pcb board, coarsened grain and two kinds of intermetallic compounds ( nisn / nisns ) which formed during reflow and thermal cycle and their impact on the reliability of solder joints are discussed in this paper
充膠樣品粗化尤為嚴重; ? ni - sn金屬間化合物包括兩層:其中,靠近ni焊盤的那層比較平整,同時, eds結果分析表明其化學式近似為nisn ,而靠近焊料的那層呈板條狀,化學式近似為nisn _ 3 ,文獻表明其為亞穩相; ?充膠使得樣品最大應力范圍降了接近一個數量級並降低了dnp的作用,同時,器件失效模式變為晶元粘接層分層; ? c - sam結果表明本論文採用的充膠樣品,晶元粘接層分層起始於500周左右,而經過2700周循環的樣品,分層幾乎擴展到整個界面。In 6. 635, topics covered include : special relativity, electrodynamics of moving media, waves in dispersive media, microstrip integrated circuits, quantum optics, remote sensing, radiative transfer theory, scattering by rough surfaces, effective permittivities, random media, green ' s functions for planarly layered media, integral equations in electromagnetics, method of moments, time domain method of moments, em waves in periodic structures : photonic crystals and negative refraction
本課程所覆蓋的論題包括:狹義相對論、運動媒質的電動力學、色散媒質中的波、微帶集成電路、量子光學、遙感、輻射傳輸理論、粗糙表面上的散射、有效介電系數、隨機媒質、平面層狀媒質的格林函數、電磁學中的積分方程、矩量法、時域矩量法、周期結構中的電磁波:光子晶體和負折射率。The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate
採用pld技術進行了碳氮化合物薄膜沉積,得到了含氮量為21at的cn薄膜;研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響,給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因;引入脈沖輝光放電等離子體增強pld的氣相反應,給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑;應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ,得到了含n量為56at的晶態cn薄膜;探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系,證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果;採用光學發射譜技術對cn薄膜生長過程進行了實時診斷,得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律,給出了cn薄膜沉積的主要反應前驅物,揭示了cn薄膜特性和等離子體內反應過程之間的聯系;採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性,揭示了si原子對薄膜生長過程的影響,給出了si基表面碳氮薄膜的生長模式;在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積,證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性,並可顯著提高晶態碳氮材料的生長速率。We use the laser output ( 320 nm, 200 fs ) of optical parametric amplifier ( opa ) in < wp = 5 > an active passive mode - locked femtosecond ti - sapphire laser operating at a repetition rate of 1khz as a exciting resource to develop optically pumped stimulated emission of zno thin films. when rectangular stripe laser irradiates thin films, optical resonant cavity is naturally formed between two nanocrystallites along with the rectangular laser stripe and planar weveguide confines the light scattering
利用飛秒激光器作為光泵浦激發光源,研究了氧化鋅薄膜的光泵浦受激發射,當條形光斑輻照薄膜樣品時,將沿著光斑條由氧化鋅納米晶面自然地形成光學諧振腔,由於平面介質波導結構限制光散射,所以成功地觀測到二氧化硅襯底上的納米氧化鋅( zno )薄膜的紫外受激發射。Based on the requirement and target of the projects, firstly, pcf bragg grating are investigated theoretically and experimentally. moreover, the effects of filling high refractive index material ( nematic liquid crystal, nlc ) in pcfs on the transmission mechanism and propagation properties are studied by using plane - wave method and finite - element method ( fem ), farther, several novel pcfs are proposed and designed. lastly, we propose and demonstrate a clad - pumped er3 + / yb3 + - codoped fiber laser, which integrate all performances of broad - band tunable wavelength, uniform output power spectrum, high repeat frequency and high average power to together
本論文選題于國家973 、 863以及國家自然科學基金等項目,結合課題的要求和主要目標,在對光子晶體光纖( pcfs )傳輸特性研究的基礎上,首先對光子晶體光纖光柵進行了理論和實驗研究;然後,採用平面波展開法和有限單元法分析了在光纖的空氣孔中填充高折射率液晶對光纖傳導機制和傳輸特性的影響,提出並設計了幾種新型光子晶體光纖;最後,提出並研製成功連續可調諧、輸出功率譜均衡的全光纖化、高功率包層泵浦鉺鐿共摻光纖激光器實驗樣機。The test result of the rene95 sample showed that the maximum ultimate tensile strength can be as high as 1400mpa and has reached 97. 9 % of that of the sample fabricated by powder metallurgy ( pm ). the plastic elongation of the test sample can even exceed that of pm. the ultimate tensile strength of the test sample grown from single crystal substrate has surpassed 6 % of that of grown from the stainless steel substrate, at the same time the plastic elongation surpassed 40 %
對成形試樣的力學性能測試結果表明,強度方面_ b最大為1400mpa ,已經達到了粉末冶金的97 . 9 ,塑性方面甚至超過了粉末冶金的水平;以單晶為基材的成形試樣其最大拉伸強度要比不銹鋼為基材的試樣高6 ,延伸率要高40 。It has broad application prospect in the following fields such as microelectronics, photoelectronic devices, large screen flat panel display, field emitter array, acoustic surface wave device, photon crystal, light waveguide array, holographic honeycomb lens and micro - optical element array, micro - structure manufacture, fabrication of large area grating and grid of high resolution, photoresist performance testing, profile measurement and metrology, etc. the paper only involves the primary research of interferometric lithography
在微電子、光電子器件、大屏幕平板顯示器、場發射器陣列、表面聲波器件、光子晶體、光波導陣列、全息透鏡和微光學元件陣列、微結構製造,高分辨、大面積光柵和網格製造,在抗蝕劑性能測試、面形測量和計量等領域,干涉光刻技術都具有廣闊的應用前景。Prepared technical parameters were optimized by l9 ( 34 ) experiment analysis. a unique method for cleaning and drying of substrate - cleaning used by scour, drying used by infrared light was fished out by large numbers of experiment. chemical mechnism of zno thin film prepared by sol - gel technique was discussed by dta for the first time. by the measurements of sem, xrd and uvs, the thin film was analysed. the result proved that the thin film with strongly preferred orientation of c - axis perpendicular to the substrate surface which surface was homogenous, dense and crackfree was the crystalline phase of hexagonal wurtzite. the thin film was composed of plentiful asteroidal crystal which crystal dimension approximately 10 30nm. the average transmittance of thin film in visible region was above 90 %. the results of measurements else also proved that the thickness of single dip - coating was 75 240nm, this films resistivity was found to be 3. 105 102 3. 96 105 ? cm. the thickness and resistivity of thin film influenced by dope - content, withdrawal speed, pre - heat - treatment, anealing were reseached respectively
利用xrd 、 sem以及uvs光譜儀等分析方法對薄膜進行了研究,結果顯示,所制備的薄膜為六方纖鋅礦型結構,具有高c軸擇優取向性;表面均勻、緻密,薄膜材料由許多星狀晶粒組成,晶粒尺寸大約為10 - 30nm左右;薄膜可見光透過率平均可達90 % ;對薄膜厚度以及電學性能進行了測定后發現:單次鍍膜厚度約為75 - 240nm , al ~ ( 3 + )離子摻雜型氧化鋅薄膜的電阻率在3 . 015 102 - 3 . 96 103 ? cm范圍內;分別研究了摻雜濃度、提拉速度、預燒溫度、退火溫度等工藝參數對薄膜厚度和電阻率的影響。Digital dipmeter is designed by consulting the indination between the surface and the pictures of the electronic core slice, following to transmit all the collected pictures to the computer, which are all handled into datas, through analyzing and working out all the datds of the positions and directions about the measured surface and the basic surface
摘要數字傾斜儀的設計是通過參考平面與圖象晶元之間的傾抖,然後將圖象晶元中的圖象傳入計算機中,再在計算機中對採集的圖象進行數據處理,分析計算出所測表面與基準面傾斜的方位和角度,該儀器充分利用了光學、機械、電子、計算機的理論,並有機的結合起來。It plays a significant role in the studies of the in - plane optical anisotropy of the lower dimensional structures of semiconductor materials their quantum - well superlattices, or the semiconductor surface restructuring, or the real time monitoring in the semiconductor epitaxy growth process
它對研究半導體材料及其量子阱超晶格等低維結構中的平面內光學各向異性、半導體表面重構和對外延生長過程中的實時監控都具有重要作用。The beam steering theory is studied to solve the problem that we can not get wider 3db bragg bandwidth and high diffraction efficiency at the same time in the optimum design of ln anisotropic acousto - optic deflector ( aod ) which is a crucial issue in the process to design an ao deflector. based upon the study of the unit cell structure of ln, the acoustic property and the optical property and the acousto - optic property are analyzed and presented
以最根本的鈮酸鋰晶體晶胞結構為出發點對鈮酸鋰晶體的聲學、光學以及聲光性質進行了推導和描述。並以此為基礎利用克里斯托夫方程計算鈮酸鋰晶體中分別在xoz與yoz聲光互作用平面上的本徵速度與聲離軸角之間的關系,並給出倒速度曲線。分享友人