脈沖形成時間 的英文怎麼說

中文拼音 [màichōngxíngchéngshíjiān]
脈沖形成時間 英文
pulse build-up time
  • 脈 : 脈名詞1. （動脈和靜脈的統稱） arteries and veins2. （脈搏的簡稱） pulse 3. （像血管的組織; 連貫成系統的東西） vein
  • 成 : Ⅰ動詞1 （完成; 成功） accomplish; succeed 2 （成為; 變為） become; turn into 3 （成全） help comp...
  • 時 : shí］Ⅰ名1 （比較長的一段時間）time; times; days:當時at that time; in those days; 古時 ancient tim...
  • 間 : 間Ⅰ名詞1 （中間） between; among 2 （一定的空間或時間里） with a definite time or space 3 （一間...
  • 時間 : time; hour; 北京時間十九點整19 hours beijing time; 上課時間school hours; 時間與空間 time and spac...
  1. For electrodeposition by dc methods, the metals deposite uninterrupted and the particles were also embeded uninterrupted into the coatings ; for electrodeposition by pc method, the particles with biggish volume were desorbed from the coatings and returned to the electrolyte again owing to the presence of pulse interval ; for electrodeposition by prc method, the particles carried positive charges are much more easy to desorb from the coatings owing to the effecf of reverse pulse current combined with pulse interval, in addition, the reverse pulse current also could dissovle the metals, further accelerates the desorption of particles, thus the particles size embeded in the coatings by prc method is the least

    直流電沉積時，基質金屬的沉積連續進行，粒子在電極表面不間斷嵌入鍍層;單脈沖電沉積由於脈沖間歇的存在使得具有較大體積的粒子會脫附，重新回到溶液中;採用周期換向脈沖時，反向脈沖電流使表面荷正電的較大的粒子更易從電極表面脫附，同時，反向脈沖電流對基質金屬的溶解作用，也會促進粒子的脫附，因此鍍層中復合粒子尺寸最小。隨著鍍層中粒子復合量的增加，三種鍍層的晶粒都明顯細化，說明al _ 2o _ 3的存在阻止了晶粒的長大，提高了電沉積過程中晶核的形成速率。
  2. This paper presents a method that chopping wave is done by switch devices which consist of three - level resistance regulating module and intelligence power module ipm, and which realizes constant - current discharge of storage battery. to achieve the intelligence control of the drive protection and the discharge process of ipm, the paper designs circuit formed by igbt threshold drive pulse pwm signals. ipm fault - blocking protection circuit and microcomputer 80c196. the devices can accurately control the 0 ~ 150a discharge current and the discharge time of the storage battery and calculate the releasing power

    實現蓄電池恆流放電過程智能控制是蓄電池放電裝置發展的必然趨，本文提出了一種通過三極電阻調節模塊和由智能功率模塊ipm為開關器件進行斬波從而實現蓄電池恆流放電的方法。為達到對ipm的驅動保護和放電過程的智能控制，文中設計了igbt門極驅動脈沖pwm信號形成電路和ipm故障封鎖保護電路及由單片機80c196為核心的微機控制器。本裝置能夠對蓄電池進行0 150a放電電流及放電時間的精確控制及釋放容量的計算。
  3. The effect of the dust charging process becomes significant when the charging time is longer than either the pulse period or the ion response time ( measured by the inverse of the ion plasma frequency )

    因為塵埃粒子的充電時間長于離子響應時間或者負脈沖時間，塵埃粒子的充電過程對鞘層的形成將有很大影響。
  4. For the self - magnetic field mid with relatively simple structure, the stability of self - magnetic field generated by electron flow is obtained by adjusting the diode gap and the delay time of bipolar pulse. under the combined effect of self - magnetic field and electrical field in the diode, stable and dense anode plasma was produced

    對于具有簡化結構優點的自磁絕緣離子二極體，通過調節陰陽極間距保證電子流造成的自磁場穩定形成，同時控制合適的雙極脈沖延遲時間，電磁場共同作用形成了穩定的稠密陽極等離子體。
  5. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
  6. The solution formula of dwell time is deduced by using the pulse iteration method and the smoothing fourier transition method, and the formula can be simplified referring to workpiece shape. according to the anastomotic status of the tool and workpiece surface, we present the new model of the inherent relation among local pressure density, removal rate, convergence ratio and residual errors, and the corresponding formulas are given. the forming cause of the edge effect in the polishing process is analyzed, and the means which reduces the edge effect is put forward

    2 、針對計算機控制光學表面成形（ ccos ）的加工方式、誤差收斂特點，研製了去除函數呈高斯分佈的雙轉子結構研拋模；採用脈沖迭代法、平滑因子傅立葉變換法推導出駐留時間的演算法，求解過程中根據工件面形的特點作了各種形式的簡化；提出了工件表面和研拋模的吻合誤差與局部壓強、材料去除率、收斂比之間內在關系的數學模型，並推導出相應的計算公式；分析了邊緣效應產生的原因，在加工過程中採用相對壓力因子對去除函數進行修正，可以消除邊緣效應的影響。
  7. Two types of fibroblast cells were used as donor control, one derived from ear skin of an adult kunming albino mouse, and the other derived from a mouse fetus. three types of cells were transferred into perivitelline space under zona pellucida of rabbit oocytes respectively. the reconstructed oocytes were fused and activated by electric pulses, and cultured in vitro

    用二次電脈沖加6 - dmap聯合激活或單獨用二次電脈沖激活小鼠胚胎幹細胞-兔卵母細胞異種重構卵時，聯合激活組的卵裂率是86 . 2 ，明顯高於單用二次電脈沖組（ 64 . 2 ， p 0 . 05 ） ，囊胚形成率分別為17 . 0和13 . 4 ，兩組間沒有顯著差異（ p 0 . 05 ） 。
  8. As for high - energy linear induction accelerator, miniaturizing pulse - forming line ( pfl ) is helpful to minify the size of the massive pulsed power system. at the same time, wealth and space could be economized

    同時脈沖形成線小型化對於一臺大型直線感應加速器來說，不僅有利於減小其龐大的脈沖功率系統，而且節省了大量的財力資源和空間體積。
  9. Cubic nitride boron ( c - bn ) films have been prepared at room temperature ( 25 ) by radio frequency plasma enhanced pulsed laser deposition ( rf - pepld ), assisted with substrate negative bias. in this paper, we primarily studied the effect of laser energy density, radio frequency power, substrate bias and depositing time on the growth of c - bn films, and analyzed the formation process and mechanism of c - bn films deposited by rf - pepld method at room temperature

    本文採用偏壓輔助射頻等離子體增強脈沖激光沉積（ rf - pepld ）方法在常溫下（ 25 ）制備立方氮化硼（ c - bn ）薄膜，初步研究了薄膜沉積參數：激光能量密度、射頻功率、基底負偏壓和鍍膜時間對立方氮化硼薄膜生長的影響，並分析了常溫下用rf - pepld方法沉積立方氮化硼薄膜的形成過程和機理。
  10. As a powerful pulsed laser irradiate a solid material, the plasmas layer of high - temperature and high - pressure would be formed in the incident surface of target instantaneously

    脈沖強激光輻照固體靶材時，瞬間即可在靶材輻照面形成一個高溫高壓的等離子體層。
  11. It uses the encouragement of step wave or other impulse current field source to produce the transition process field in earth. in the moment of shutting the power it produce the volute alternating electromagnetic field. from the abnormity of measuring the attenuation character of the second induction electromagnetic field, which produced by underground medium with time change, the conductive capacity and the position of the underground non - homogeneous substance can be analyzed

    瞬變電磁法（ transientelectromagneticmethod ）是一種時間域的電磁勘探方法，利用階躍波或其它脈沖電流場源激勵，在大地產生過渡過程場，斷電瞬間在大地中形成渦旋交變電磁場，測量這種由地下介質產生的二次感應電磁場隨時間變化的衰減特性，從測量得到的異常分析出地下不均勻體的導電性能和位置，從而達到解決地質問題的目的。
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