膜熱阻 的英文怎麼說

中文拼音 [mórèzǔ]
膜熱阻 英文
film resistance
  • 膜 : 名詞1. [生物學] （像薄皮的組織） membrane 2. （像膜的薄皮） film; thin coating
  • 阻 : 動詞（阻擋; 阻礙） block; hinder; impede; obstruct
  1. As one of the most important applications, cmr bolometer is fabricated using the lacamno3 films, which has a metal - insulator transition temperature at 300k. the archetypal bolometer is fabricated after the film is photolithographed, evaporated au electrodes and fixed

    以製作室溫超巨磁電阻測輻射熱儀為目標，將t _ （ mt ） 300k ， tcr 5的薄膜進行光刻、電極製作、封裝等處理製作測輻射熱儀原型器件。
  2. Aspects on developing nickle - film thermal resistance

    關于鎳薄膜熱電阻研製的幾個問題
  3. The resistivity of the films drops compared with the as - grown films, but the temperature of maximum magnetoresistance reaches 287k, very close to the room temperature. therefore it is not only an important improvement to fabricate the cmr bolometer which can work near room temperature, but also a prospective research for other applications such as magnetic - sensors, spintronics devices and infrared detectors

    同時，退火后薄膜的電阻率明顯下降，外加5t磁場時，最大磁電阻率溫度點上升到287k ，接近於室溫，這不僅為製作室溫超巨磁電阻測輻射熱儀打下了堅實的基礎，也為其它許多器件的應用提供了可能。
  4. The membrane properties were found to be dependent upon the content of styrene. the membrane physic - chemical properties compare to nafion 117 except that their chemical stability has to be further improved to make them acceptable for practical use in the proton exchange membrane fuel cell. the proton transport through the membrane follows the " liquid - like " proton conductivity mechanism y and the water balance is important for the working condition of the fuel cell

    對磺化膜的研究分析表明：膜的性能參數如離子交換容量、吸水率、水合系數、形體穩定性、導電性能、化學與熱穩定性等依賴于膜中苯乙烯含量，且接枝苯乙烯相互間的位阻效應對膜性能影響很大；膜的性能可與nafion膜相比較；質子在膜中的傳導遵循「似液體」質子傳導機理；電滲析與擴散作用使膜保持水平衡。
  5. The target determines the precision, reliability, stability and tcr of the resistor. on the other hand, the coatings play an important role in improving the heat - resistance and moisture - resistance of the resistor. however, nowadays the study in this field is some deficient in our country

    此外，金屬膜電阻器的耐熱、耐濕、耐腐蝕性能還直接與金屬膜電阻器表面的保護塗料的性能密切相關，而目前國產的塗料在耐高溫、耐高濕方面還達不到國家軍標的要求。
  6. A hydrogen and argon ions mixing beam was implanted into the deposited vanadium oxide film. after annealing, vo2 film with tcr ( temperature coefficient of resistance ) as high as 4 % was obtained. the bombardment of ar + could break v - o bond of v2o5 molecule in deposited film and implanted h + resulting in the deoxidization of v2o5, so the vo2 thin film could be prepared by proper control of the dose of ar + / h + implantation

    利用離子束增強沉積設備，在ar ~ +離子束對v _ 2o _ 5靶濺射沉積的同時，用氬、氫混合束對沉積膜作高劑量的離子束轟擊，使得被氬離子轟擊后斷鍵的氧化釩分子，再被注入氫降價，然後經適當的退火，成功地制備了熱電阻溫度系數高達4的vo _ 2薄膜（國外報道值為2 - 3 ） ，並研製了單元懸空結構探測器和8 1 ， 16 1線性陣列。
  7. In recent years, al - doped zno ( azo ) thin films has become a hot issue of transparent conductive thin films field and preferred materials instead of ito films not only because of their comparable optical and electrical properties ( high optical transparency in the visible range, low electrical resistivity ) to ito films, but also because of their lower price and higher thermal and chemical stability under the exposure to hydrogen plasma than ito

    近年來，由於al摻雜的zno薄膜（ azo ）具有與ito薄膜相比擬的光電性能（可見光區高透射率和低電阻率） ，又因其價格較低以及在氫等離子體中的高穩定性等優點，已經成為替代昂貴的ito薄膜的首選材料和當前透明導電薄膜領域的研究熱點之一。
  8. ( 3 ) according to the study of heat treatment process, heat treatment ambience, airflow and heat treatment temperature were considerd as the important influences on the quality and property of ybco films. through optimizing the process, the ybco films were prepared on sto single crystal, and their room temperature resistance was about 200 ybco films also were fabricated on the sto buffered si substrate, and their room temperature resistance was about 300d

    （ 3 ）根據本文熱處理過程的工藝探索，認為熱處理氣氛、氣流量及處理溫度是影響薄膜質量及性能的重要因素，通過優化工藝過程，在鈦酸鍶（ sto ）單晶上制得的ybco薄膜表面質量良好，室溫電阻200左右；而在預制了鈦酸鍶（ sto ）緩沖層的si基板上制備的ybco薄膜的室溫電阻為300左右。
  9. The process of sputtering resistance by woodceramics target was studied. the experiments proved that the film series could be used for a long time, with stability performance and could be used in farinfrared heating field

    研究了木質陶瓷鑲嵌靶鍍覆的電阻膜系的工藝，試驗表明該膜系可長時間使用，性能穩定，而且可以用於遠紅外加熱領域。
  10. The effects of interfacial resistance, superheating, free convection due to both temperature and concentration gradients, mass diffusion and thermal diffusion, and variable properties in both the liquid and gas - vapor regions were considered

    分析中，考慮了相間阻力、液膜波動、蒸汽過熱度、因溫度和濃度梯度引起的自然對流、質擴散和熱擴散以及物性的變化。
  11. The phase structure of different cu - fe thin films were studied by using grazing incidence x - ray analysis ( gixa ). the texture and residual stress of different cu - fe thin films were measured by scan of x - ray diffraction ( xrd ) and 2 scan with different. the thicknesses of different thin films were characterized by means of small angle x - ray scattering ( saxs ) technique. by using atomic force microscope ( afm ) measured surface roughness of thin films. the component of different thin film was characterized by energy disperse spectrum ( eds ) and x - ray fluorescence ( xrf ). the magnetic properties of cu - fe thin films were measured by means of vibrating sample magnetometer ( vsm ). in addition, the giant magnetoresistance ( gmr ) effects of different films were also measured. the original resistance of the film fabricated by a direction - current magnetron sputtering system is directly affected by bias voltage

    利用掠入射x射線分析（ gixa ）技術對不同cu - fe薄膜的相結構進行了研究;利用xrd掃描及不同角度的2掃描對薄膜進行了結晶織構及殘余應力分析;運用小角x射線散射（ saxs ）技術測量了薄膜的厚度;採用原子力顯微鏡（ afm ）觀察了薄膜的表面形貌;運用能量損失譜（ eds ）及x射線熒光光譜（ xrf ）對薄膜進行了成分標定;使用振動樣品磁強計測量了不同cu - fe過飽和固溶體薄膜的磁性能;最後利用自製的磁阻性能測試設備測量了真空磁場熱處理前後不同薄膜的巨磁阻值。
  12. Sensing element includes ceramic platinum resistance, glass platinum resistance, thick film platinum resistance, thin film platinum resistance, mica platinum resistance and copper resistance

    感溫元件有：陶瓷鉑電阻玻璃鉑電阻厚膜鉑熱電阻薄膜鉑熱電阻雲母鉑電阻銅電阻。
  13. The results show the grain size becomes larger along with elevated temperature and the grain size in interconnects does not change evidently after annealed at 200 ? because of the effect of the trench structure

    結果顯示熱處理后銅膜晶粒長大，但銅互連線薄膜由於溝槽結構對晶粒的長大有阻礙作用。利用xrd和ebsd測試方法對銅膜及銅互連線薄膜的織構進行評價。
  14. One of the most important directions in the study of colossal magnetoresistance materials is to fabricate the bolometer, which can work near the room temperature and shows an excellent performance, if the films can be prepared with the metal - insulator transition temperature ( tmi ) reaching to the room temperature

    利用超巨磁電阻材料製作工作于室溫的高性能測輻射熱儀是國際上cmr應用研究的一個重要方向，而能否制備具有室溫轉變點的薄膜材料是其中的一個決定因素。
  15. On the other hand, relationship between doping concentration, phase transition temperature, magnitude of resistance change and hysteresis width was investigated

    在此基礎上，本文進一步探討了摻雜濃度與vo _ 2薄膜相變溫度、電阻突變數量級以及熱滯寬度的關系。
  16. Then, the effect of vacuum annealing temperature on vo _ 2 thin film phase transition temperature, magnitude of resistance change and hysteresis width by doping zr ~ ( 4 + ) was discussed

    （ 2 ）本文以摻鋯為例，探討了不同的真空退火溫度對vo _ 2薄膜的相變溫度、電阻突變數量級以及熱滯寬度有何影響。
  17. The films prepared under 425 ? is composed with amorphous snoi and its sheet resistance is very high. with the substrate temperature ' s increasing, the degree of crystallization, film thickness increase and electrical resistivity, sheet resistance decrease obviously. when the substrate temperature is higher than 525 ?, the temperature ' s increasing is not of benefit to the films thickness and sheet resistance

    常壓熱分解cvd法制備的sno _ 2在較低基板溫度下制備出的薄膜基本上是非晶態的，方塊電阻很高；隨著基板溫度的升高，薄膜厚度增加，薄膜結晶程度提高，薄膜電阻率和方塊電阻均顯著降低；當基板溫度高於525以後，隨著基板溫度的升高，薄膜厚度基本不再明顯增加，薄膜結晶程度繼續提高，薄膜電阻率繼續降低，方塊電阻不再明顯降低。
  18. Undoped bn films exhibit a resistivity of 1. 8 x 10 " q cm and those of doped are 7. 3 x107 q cm. the influence of process parameters for doping studied, it showed that both s fountain temperature and substrate temperature impact the resistivity evidently. analyzed by xps and aes, s dopant concentration is made some difference with substrate negative bias voltage

    研究了工藝參數對薄膜電阻率的影響，實驗表明硫源加熱溫度和襯底溫度對氮化硼薄膜的電阻率有明顯影響，直流負偏壓對薄膜的電阻率並沒有明顯影響， xps光電子能譜表明直流負偏壓對薄膜中的硫含量有一定影響。
  19. The fourth part is temperature control system which ensure the pcr reaction performing accurately. after analysis of the experiment result and optimization of technics, we finally come up with relatively ideal technics situation and produce relatively ideal micro chamber, ni temperature sensors and ni / cr heaters, which can provide and test the temperature condition for pcr amplification

    經過不斷地分析實驗結果，改進製作方法，最終探索出了較好的工藝條件，制備出了較理想的微型腔體、鎳薄膜電阻溫度傳感器和鎳鉻合金薄膜電阻加熱器，能提供和檢測pcr擴增反應所需的溫度，並實現了三溫區的循環控制。
  20. The results of gmr testing indicate that the gmr effect is much little in the assputtered films, but they will be enhanced after vaccum annealling in magnetic fileld. and we also found that the thickness of the films and the

    磁阻性能測試結果表明，沉積態薄膜的磁阻性能微弱甚至沒有，經過真空磁場熱處理后的薄膜磁阻性能明顯得到提高，並且薄膜厚度與退火溫度均對薄膜的巨磁阻性能有重要影響。
分享友人
分享到 Line

分享到臉書