蒸汽沉積 的英文怎麼說
中文拼音 [zhēngqìchénjī]
蒸汽沉積
英文
vapor deposition- 蒸 : Ⅰ動詞1. （蒸發） evaporate2. （利用水蒸氣的熱力使食物熟或熱） steam Ⅱ名詞[中醫] （將藥物隔水蒸熟） steaming
- 汽 : 名詞1. （由液體或某些固體變成的氣體） vapour2. （水蒸氣） steam
- 沉 : Ⅰ動詞1 （沉沒; 墜落） sink 2 （沉下 多指抽象事物） keep down; lower 3 [方言] （停止） rest Ⅱ形容...
- 積 : Ⅰ動詞（積累） amass; store up; accumulate Ⅱ形容詞（長時間積累下來的） long standing; long pending...
- 蒸汽 : vapour; reek; breath; steam蒸汽採暖 steam heating; 蒸汽錘 [機械工程] steam hammer; 蒸汽打樁鍾 ste...
- 沉積 : [地] deposit; sedimentation; deposition; precipitation
-
With your know - how with things ammonia, release, with characters, diesel engine or vehicles, moped, also engine parts and deposition, its worth it to enquire by e - mail, in order to receive an interesting offer from the enterprise
此外，您當讓還可以在短時間內通過電話或是電子郵件對沉澱作用、沉積作用、特殊化學品和蒸汽鍋爐的所有產品供應做出決定。Water steam was used as oxidant, and the optimum water steam partial pressure is between 1 10 - 4 and 5. 5 10 - 4 pa. under the optimum growth parameters, a ceo _ 2 seed layer with highly textured degree was successfully prepared. beside the one step process was experimented in this dissertation, the two step process was proposed and studied to further improve the quality of ceo _ 2 seed layer. in the two step process, about 15 nm thick of ce metal layer was deposited on metallic substrate at the first step, then water steam was introduced in the chamber, and the ceo _ 2 thin films were subsequently deposited with reactive sputtering in the
總結出沉積ceo _ 2薄膜的優化工藝條件，當沉積溫度為720 - 850 、水蒸汽分壓介於1 10 - 4 - 5 . 5 10 - 4pa之間、退火時間40min時，獲得了織構程度良好的ceo _ 2種子層薄膜; 3 .由於一步法制備ceo _ 2種子層中水分壓范圍狹窄，工藝條件難以控制，並且退火延長了薄膜的制備時間，因此，本論文又採用了兩步生長法沉積ceo _ 2種子層，即:先在ni - w基帶上沉積一層約15nm的金屬ce薄膜，再通入氧化氣氛（水蒸汽） ，繼續進行薄膜沉積。The first one was called one step process or isothermal deposition and annealing process. in this process, the ceo _ 2 layers were formed at high temperature and oxidative atmosphere and then annealed at the same temperature. the relationship between the growth parameters and the textured degree of ceo _ 2 thin film was systematically studied, and the optimal growth parameters were summaried
採用等溫退火法（或稱「一步法」 ）沉積ceo _ 2 ，即:先在氧化性氣氛下直接反應生長ceo _ 2薄膜，再在與沉積溫度相同的溫度下對薄膜進行退火處理，系統研究了沉積溫度、退火時間、水蒸汽分壓對薄膜c軸織構程度的影響。
分享友人