表面狀態濃度 的英文怎麼說

中文拼音 [biǎomiànzhuàngtàinóngdù]
表面狀態濃度 英文
surface state concentration
  • 表 : Ⅰ名詞1 （外面;外表） outside; surface; external 2 （中表親戚） the relationship between the child...
  • 面 : Ⅰ名詞1 （頭的前部; 臉） face 2 （物體的表面） surface; top 3 （外露的一層或正面） outside; the ri...
  • 狀 : Ⅰ名詞1 （形狀） form; shape 2 （情況） state; condition; situation; circumstances 3 （陳述事件或...
  • 態 : 名詞1. （形狀; 狀態） form; condition; appearance 2. [物理學] （物質結構的狀態或階段） state 3. [語言學] （一種語法范疇） voice
  • 濃 : 形容詞1. （液體或氣體中所含的某種成分多; 稠密） dense; thick; concentrated 2. （程度深） （of degree or extent） great; strong
  • 度 : 度動詞[書面語] （推測; 估計） surmise; estimate
  • 表面 : surface; superficies; boundary; face; rind; sheet; skin; outside; appearance
  • 狀態 : status; state; condition; state of affairs: （病的）危險狀態 critical condition; 戰爭狀態 state o...
  • 濃度 : potency; thickness; concentration; consistence; strength; consistency; density
  1. Surface states and the topmost surface atoms of the batio3 thin films have been analyzed by x - ray photoelectron spectroscopy ( xps ) and angle - resolved x - ray photoelectron spectroscopy ( arxps ). the results show that the as - grown batio3 thin films have an enriched - bao nonstoichiometric surface layer which can be removed by ar + ion sputtering, and the atomic ratio of ba to ti decreases with increasing the depth of ar + ion sputtering

    用x射線光電子能譜技術（ xps ）和角分辨x射線光電子能譜技術（ arxps ）研究了薄膜的表面化學態以及最頂層原子種類和分佈狀況，結果顯示在熱處理過程中薄膜表面形成一層富含bao的非計量鈦氧化物層，並且鋇-鈦原子濃度比隨著探測深度的增大而逐漸減小。
  2. Also, the author ’ s design strategy and creativity has been given in this paper. specifically, it includes : based on the feasibility analysis of the fit selection of control parameters in the aeration process, the aeration process of wastewater treatment of the joint - constructional complete - mixed activated sludge process has been aimed at in this paper. then, the state equations of the aeration process have been proposed in this paper, which is on the base of dissolved oxygen concentration ( do ) and discharge quantity of sludge ( qw ) as control variables, the concentration of bod and sludge as state variables. based on the present study on optimization control of wastewater treatment, the multivariable optimal control model with restriction factor has been presented in the paper with introducing modern control theory and system analysis into the field of activated sludge wastewater treatment,

    具體包括:以完全混合、表面曝氣合建式活性污泥工藝的污水處理曝氣過程為研究對象，在闡述了曝氣過程式控制制參數選取可行性的基礎上，建立了以溶解氧濃度do和活性污泥排放量qw為控制變量，以曝氣池中有機物濃度s和微生物濃度x為狀態變量的活性污泥曝氣過程的基本狀態方程;運用現代控制理論的觀點和污水處理理論，在現有關于污水處理最優控制問題研究的基礎上，建立了有約束條件多變量能耗最小數學模型，該數學模型是以有機物排放總量和狀態變量的末值條件作為約束條件，曝氣過程的能耗最小作為目標泛函;採用增廣拉格朗日乘子法對最優控制問題進行轉化，並對應用極大值原理求解能耗最小這一最優控制問題進行了詳細的解析;引入約束運算元，應用具有控制約束的共軛梯度演算法對能耗最小這一最優控制問題進行求解，並進行模擬實驗驗證。
  3. With the extension of time, the properties of nylon poy became worse, i. e. higher concentration of oil, poor appearance of oil membrane and bad friction, cohesion as well as lower antistatic property

    發現隨著時間的延長，纖維表面油劑濃度增高，油膜狀態變差，纖維磨擦性能、抱合性能下降。
  4. The result shows that argon gas can not only promote the excitation of plasma at low pressure, but also improve discharge state, increase the density and activation of reaction radical and improve the quality of diamond films. on the other side, argon can cool the plasma and maintain low temperature of substrate due to its big ionization section and high collision probability with gas molecules

    結果表明，氣體系統中引入氬氣一方面不僅有利於維持低壓放電，而且改善放電狀態，提高反應活性基濃度和活性，提高低溫沉積金剛石膜的質量；另一方面，由於其大的電離截面使其和電子碰撞的幾率大大提高，對等離子體進行冷卻，有利於基片溫度的降低。
  5. Many factors regarding the modifying coefficients of circular and rectangular section are analyzed : ( 1 ) it is theoretically proved that the diffusion coefficient of cl - in concrete is dependent of modifying coefficients ; ( 2 ) through analysis of the results of numerical value calculation, it is discovered that the relation between the modifying coefficients and the thickness of protection layer of concrete is linear, from which the function expression of these two variables is gain ; at the same time, the influence on modifying coefficient of the radius of circular section and the thickness of cl - on the surface of concrete ; based on these, practical calculating method of beginning corrosion time of steel of circular section is set up ; ( 3 ) to rectangular section, the diffusion of cf in concrete is two - dimension diffusion

    討論了影響矩形截面以及圓形截面修正系數的因素： （ 1 ）從理論上證明了氯離子在混凝土中的擴散系數與修正系數無關； （ 2 ）通過圓形截面數值計算結果的分析，發現圓形截面修正系數與保護層厚度基本成線性關系，並建立了二者之間的聯系；分析了圓形截面半徑、混凝土表面氯離子濃度對修正系數的影響，從而建立了圓形截面鋼筋初始銹蝕時間的實用計算方法； （ 3 ）在矩形截面氯離子侵蝕下，混凝土處於二維擴散狀態。本文通過計算分析，證明二維擴散的影響區域從邊角開始向中間逐步擴散，並證明了二維擴散影響區域依賴于氯離子擴散系數與氯離子擴散時間的乘積。
  6. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
  7. A number of factors will affect efficiency of the biosorption, and these factors were studied in chapter three, including the ph value, initial biomass loading and content of heavy metal ions, ion strength of the solution, etc. although the research for new and innovative treatment technologies has focus attention on the metal binding capacities of various biomass, the exact interaction between the ligands of the metal uptake process and the description of the thermal properties of the biosorption remain essentially unknown

    藻類對重金屬離子的吸附效率受藻類細胞表面及溶液的物理化學狀態的影響，本文從ph 、藻粉的起始含量及重金屬離子的起始濃度、離子強度等四個方面做了研究。第四章是大型海藻生物吸附平衡的熱力學研究，我們對平衡數據做了langmuir方程的回歸分析，得到了兩種海藻吸附各重金屬離子的最大吸附容量；我們還以cu為例研究了溫度對吸附容量的影響，並計摘要算了其吸附熱。
  8. According to the requirement of innovation engineering in chinese academy of sciences, the work in this thesis focused on fabrication of soi material with epitaxial layer transfer of porous silicon and study of luminescence of modified porous silicon, and we obtained the following new results : the effect of doping and anodizing condition on the properties of porous silicon, including the microstructure, ciystallinity and surface morphology, has been studied systematically. it is found that the porous silicon and substrate have the same orientation and share a coherent boundary. but at the edge of pores, the lattice relaxes, which induces xrd peak moving of porous silicon

    Soi技術和多孔硅納米發光技術研究是當今微電子與光電子研究領域的前沿課題，本文根據科學院創新工程研究工作的需要，開展了多孔硅外延層轉移eltran - soi新材料制備與改性多孔硅發光性能的研究，獲得的主要結果如下：系統研究了矽片摻雜濃度、摻雜類型和陽極氧化條件等因素對多孔硅結構、單晶性能和表面狀態的影響，發現多孔硅與襯底並不是嚴格的四方畸變，在多孔硅/硅襯底的界面上，多孔硅的晶格與襯底完全一致，但在孔的邊緣，多孔硅的晶格發生弛豫。
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