跨導體 的英文怎麼說

中文拼音 [kuàdǎotǐ]
跨導體 英文
transconductor
  • 跨 : 動詞1 （抬起一隻腳向前或向左右邁） step; stride 2 （兩腿分在物體的兩邊坐著或立著） bestride; stra...
  • 導 : 動詞1. （引導） lead; guide 2. （傳導） transmit; conduct 3. （開導） instruct; teach; give guidance to
  • 體 : 體構詞成分。
  1. The factors limiting the frequency band of the wide - band amplifier are introduced. through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics, a method of improving fr of mosfet by using short channel device and making mosfet work at the saturation region through raising vgs is put forward ; the effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit, current pattern circuit and frequency characteristics are analyzed. according to the linear theory of transconductance which is applied in the bit circuit, the current pattern amplifier circuit, current transfer circuit and output circuit which consist of mosfet and the wide - band amplifier composed of them are put forward

    介紹了限制寬帶放大器頻帶寬度的因素，通過分析mosfet的本徵參數、寄生參數對頻率特性的影響，提出了採用短溝器件、使mosfet工作在飽和區、抬高柵源電壓等提高mosfet特徵頻率的方法；分析了不同電路組態對放大器頻率特性的影響、節點電壓對電壓模電路、電流模電路頻率特性的不同影響，根據應用於雙極晶體管電路的跨導線性原理，提出了採用mosfet構成的電流模放大電路、電流傳輸電路、輸出電路以及由它們所組成的寬帶放大器，獲得了良好的頻率響應。
  2. The three - order modulator has a 2 - 1 cascaded structure and 1 - bit quantizer at the end of each stage, the modulator is implemented with fully differential switched - capacitor circuits. and then, the discussion will begin by exploring the design of various circuit blocks in the modulator in more detail, i. e., ota, switched - capacitor integrator, quantizer, two - phase non - overlapping clock signal, etc., at the same time, these circuits will be simulated in spectre and hspice. at last, the whole cascaded modulator will do behavioral level simulation by matlab soft and simulink toolbox

    本論文中，首先介紹模數轉換器的各種參數的意義，以及一階sigma - delta調制器和高階sigma - delta調制器的原理;給出解決高階單環sigma - delta調制器不穩定性的方案，引入級聯結構調制器，特別針對級聯結構調制器中的失配和開關電容積分器的非理想特性進行詳細的討論;本設計的sigma - delta調制器採用2 - 1級聯結構和一位量化器，調制器採用全差分開關電容電路實現;同時對整個調制器的各個模塊進行了電路設計，包括跨導放大器、開關電容積分器、量化器、兩相非交疊時鐘等，並利用hspice和spectre模擬工具對這些電路進行模擬測試;最後，利用matlab軟體和simulink工具對整個級聯調制器進行行為級模擬。
  3. Detail specification for electronic components. semiconductor integrated circuit - cf3080 type transconductance operational amplifier

    電子元器件詳細規范.半導體集成電路cf 3080型跨導運算放大器
  4. The hetrojunction device fabricated with sige material has shown great advantages over bulk sample in many aspects : higher carrier mobility, larger transconductance, stronger drive capability and hence faster circuit speed

    與體si器件相比，採用sige材料的異質結器件已經在許多方面顯示出了強大的優勢:譬如更大的載流子遷移率，更大的跨導，更強的電流驅動能力以及更快的電路速度等等。
  5. Strained - soi mosfet, which appears recently, takes both the advantages of soi ( silicon on insulator ) and sige ( silicon germanium ). it has shown advantages over bulk sample in enhanced carriers mobility, as well as higher transconductance, stronger drive capability and reduced parasitic capacitances. these properties make it a promising candidate for improving the performance of microelectronics devices

    Strained - soimosfet是最近幾年才出現的新型器件，它將soi材料和sige材料結合在一起，與傳統體硅器件相比，表現出載流子遷移率高、電流驅動能力強、跨導大、寄生效應小等優勢，特別適用於高性能、高速度、低功耗超大規模集成電路。
  6. According to the principle of sincere, trustworthy, diligent and thrifty, with the idea of based on the persons, relying on technology, scientific management, and advancing towards international way, face to the future, and surpass constantly, we will make mingxin as an international manufacturer of power semiconductors

    近年來，逐步導入國際知名企業的先進管理模式，管理水平進一步提高，產品品質服務受到了多家國際知名企業和跨國公司的認可和信賴。本公司的經營理念：誠信勤儉。發展目標：成為國際化合作半導體器件專業製造廠。
  7. Electrical installations of buildings - part 5 - 54 : selection and erection of electrical equipment ; earthing arrangements, protective conductors and protective bonding conductors

    建築物的電氣設施.第5 - 54部分:電氣設備的選擇和安裝.接地措施保護導體和保護跨接線
  8. From multi - media to cross - border, ifva means visual bloom and boom ! besides arenas for friendly competition between adepts, ifva also presents a series of ifva seminars for the sharing of creativity tops and experience, to be hosted by barbara wong chun - chun, director of truth or dare : 6th floor rear flat, comic g c goo - bi family designer peter ng, multi - media creators john chan and pam hung, and sunny lau, who has made a name in still photos, filmmaking and magazine publication. these new currents on the block in multi - media want to wake up your dormant creativity genes

    Ifva除擺下擂臺陣讓各位高手過招外，亦請導演黃真真、 漫畫設計師伍尚豪、多媒體創作人想貓的魚及貓子餅餅、還有由硬照玩到電影再出版雜志的sunny lau等一眾城中打出名堂的跨媒體新型人主持一系的ifva +講座，跟大家分享獨門創作秘笈，盡傳大家實戰經驗，以動喚醒潛藏的創意基因。
  9. Based on the historical space forecast data and corresponding actual data provided by a global semiconductor assembly and test company, the uncertainty of space planning was defined. during this analysis process, linear regression, grey prediction, neural network back propagation algorithm and confidence interval were applied, respectively, to define the uncertainty. compared with those methods, the confidence interval of historical space forecast error, calculated by mathematical statistics, was the reasonable method to define the space forecasting uncertainty

    本文從半導體工廠長期生產能力計劃的頂層即廠房生產面積的計劃展開，對一跨國半導體封裝測試公司提供的廠房生產面積的長期歷史預測數據以及對應的真實數據進行分析，採用線性回歸，灰預測，神經網路bp演算法，基於數理統計的置信區間的求解等方法分別定義廠房生產面積預測的不確定度，經多種方法的比較得出，基於數理統計方法求解出的生產面積歷史預測誤差置信區間能直觀清楚地標定不確定度。
  10. After introduction of the tranlinear loop principal, the bjt current controlled conveyor has been designed by using mixed tranlinear loop voltage follower. as for modern integrated circuit, the model of mos transistor, the active resistance and the current mirror integrated circuit formed by mos transistor are introduced. the cmos current controlled conveyor has been derived from mixed tranlinear loop cmos voltage follower based on weak inversion operation

    針對現代集成電路的工藝，本文對mos晶體管的工作原理進行了簡要的敘述，討論了有源電阻和電流鏡的實現方法，並利用mos晶體管的亞閾值特性組成混合跨導線性迴路完成對應的電壓跟隨器的設計，推導出了基於cmos技術的電流控制傳送器。
  11. The whole pwm circuit contains two subcircuit, the front - end is pwm module that make up of the counter that based on nine mosfet true - single - phase - clock d flip - flop ; the back - end is demodulated module, which is consist of a three order chebyshev low - pass filter used trans - conductor capacitor. all the subcircuits are simulated. at last, an approving simulated result of the whole circuit is given too

    在調制部分，利用九管單相時鐘d觸發器構成計數器，並由此組成了脈沖寬度調制電路，同時給出了在典型溫度下的模擬結果;在解調部分，介紹了低通濾波器從無源到有源的設計方法，設計了三階切比雪夫低通跨導電容濾波器，同樣給出了相應的模擬結果;最後，作為將脈沖寬度調制電路和濾波器作為整體電路，以脈沖調頻波為輸入進行了模擬，取得了令人滿意的結果。
  12. I also want a breakdown of the transnational production system that produced it, down to which semiconductor came from which province of which country

    我也想要生產了它的跨國的生產系統的一個故障，在下面到哪個半導體來自哪個省哪個國家。
  13. The chip is accomplished in the full cooperation with other team members, the author pays particular attention to the analysis of the whole chip architecture and three sub - block design : transconductance amplifier ( ota ), voltage reference and current reference. based on existed technologies, a new high order temperature compensated voltage reference and a creative current reference with high order temperature compensation are shown respectively. the author simulated all the sub - block and whole chip by hspice

    該晶元的設計是由小組成員共同完成，本人主要負責了總體電路的分析、聯合模擬驗證及以下三個子電路的設計: 1 、跨導放大器，詳細分析了bandgap跨導放大器輸入級的動靜態特性及其優缺點，並結合系統要求，設計了一種與cmos工藝相兼容、可替代bandgap跨導放大器的低壓共源共柵跨導放大器。
  14. This paper describes a reconstructive algorithm which is based on network theory for electrical capacitance tomography technic. there are twelve electrodes in the system. the permittivity distribution of flow with two components within a pipeline is reconstructed. assume the permittivity distribution of the region to be reconstructed. then whole measured area is discretized into a network composed of capacitance. the measurement circuit which contains a pair of source electrode and detecting electrode is taken as a four - terminal network. the across admittance of the four - teminal network is proportional to the capacitance between the source electrode and the detecting electrode. modify the distribution of the permittivity according to the difference between the calculated capacitance and measured capacitance. the experimental results show that this algorithm is effective and can coverge

    本文描述了一種用於兩種成份的流體成像的12電極電容層析成像新方法.該方法基於電路的網路理論，首先對重建區域假定一個介電率分佈，用電容網路作為離散化模型，將每一個源電極和探測電極對組成的測量電路看作一個四端網路，該四端網路的跨導與源電極和探測電極之間的電容值是線性關系，這個電容值和測量得到的電容值之間存在誤差，根據這個誤差對修正介電率分佈.通過對不同介質分佈作的模擬實驗結果，證實了該演算法是有效的，收斂的
  15. Specifically analysed and presented the common - mode differential input stage, linear transconductance control circuit of input stage, current sum circuit, floating ab - class control output stage, the bias circuit of op amps and the bandgap reference current source circuit

    具體對運放的共模差分輸入級、輸入級線性跨導控制電路、電流和電路、浮動ab類輸出級電路、運放的偏置電路和帶隙參考電流源電路進行分析設計。
  16. Also discussed the methods on how to realize the cwt both in time - domain and frequency - domain and how to design the gm - c bandpass filter used in realization of cwt. in order to optimize the performance of gm - c filter, linearization techniques are investigated and proposed. due to process variation and parasitics, an automatic tuning is designed for center frequency / 0 and quality factor q also, in this thesis, 16 - channel analogue cmos cwt circuit has been realized

    論文圍繞連續小波變換的模擬電路實現這一熱點問題，討論了連續小波變換的時域和頻域實現方法；具體分析了并行結構與串列結構的優缺點；研究了頻域法中的跨導-電容帶通濾波器的設計；給出了改善跨導輸入級傳輸特性的線性程度並擴大線性范圍的具體方法；設計了片內自校正（可調諧）環節使濾波器參數自動調整到設計標準值；最後給出了16通道濾波器組實現小波變換的方法。
  17. The scope of our business teco was awarded the tender of taiwan s national health insurance ic card project in 2001, which led to the establishment of smartcard system division. as the prime contractor, teco successfully completed the mission from the bureau of national health insurance bnhi of taiwan, distributing 22 million healthcare smart cards to taiwanese citizens within 25 months

    2001年4月，東元電機結合德國g d日本hitachi等國際知名廠商與國內精英團隊共同標得衛生署健保局之全民健保ic卡專案，並成立智能卡事業部，此一標案的獲得，代表多年來東元在高科技方面投入的努力，獲得肯定，也象徵東元集團跨入高科技的半導體業與知識經濟服務業的重要里程碑。
  18. In this paper, the soi technology is applied to the integrated circuit fabrication. soi technology overcomes some disadvantages of bulk silicon because of its inherent structure. it has the advantages such as no latch - up effect, low parasitic capacitance, high transconductance, simple structure, high density and good anti - radiation

    Soi技術以其獨特的材料結構有效地克服了體硅材料的不足，它具有無閉鎖效應；漏源寄生電容小；較高的跨導和電流驅動能力；器件結構簡單；器件之間距離小；集成度高；抗輻射性能優良等優點。
  19. 3. a good result is gotten under the star - hspice simulation. the dc gain is 90 db, the offset voltage is 40 u v while driving 10k, the unity - gain frequency is 10mhz with phase margin 67, the slew rate is 10w us while driving 10pf

    用star - hspice模擬軟體對電路模擬，在1 . 5v電源電壓、直流10k負載、交流10pf負載的情況下，整個共模電壓范圍內跨導基本保持恆定，只有18的變化，直流增益90db ，單位增益帶寬10mhz ，相位裕度80度，壓擺率10v s 。
  20. Our customers include multinational companies in semiconductor, telecommunication, medical, electronic and electrical industry

    我們的客戶大部分是半導體、通訊、醫療、電子和電器行業的跨國公司。
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